公开(公告)号：AU7675094A

公开(公告)日：1996-01-25

申请号：AU7675094

申请日：1994-09-08

Applicant: SILICON VIDEO CORP ,  ADVANCED TECH MATERIALS ,  MASSACHUSETTS INST TECHNOLOGY

Inventor： TWICHELL JONATHAN C ,  BRANDES GEORGE R ,  GEIS MICHAEL W ,  MACAULAY JOHN M ,  DUBOC ROBERT M JR ,  CURTIN CHRISTOPHER J

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

公开(公告)号：AU7677094A

公开(公告)日：1995-03-27

申请号：AU7677094

申请日：1994-09-08

Applicant: SILICON VIDEO CORP

Inventor： MACAULAY JOHN M ,  SPINDT CHRISTOPHER J ,  SEARSON PETER C ,  DUBOC ROBERT M JR

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

Abstract: A method comprising the steps of: causing charged particles to pass through a track layer to form a multiplicity of charged-particle tracks therethrough; creating corresponding open spaces through the track layer by a procedure that entails etching the track layer along the charged-particle tracks; forming electron-emissive elements accessible through the open spaces in the track layer; and subsequently providing a patterned electrically non-insulating gate layer over the electron-emissive elements such that gate openings extend through the gate layer to enable each gate opening to expose at least one of the electron-emissive elements.

公开(公告)号：AU7640994A

公开(公告)日：1996-01-25

申请号：AU7640994

申请日：1994-09-08

Applicant: SILICON VIDEO CORP

Inventor： SPINDT CHRISTOPHER J ,  MACAULAY JOHN M

IPC: H01J9/02

Abstract: An electron emitter suitable for a flat-panel CRT display is fabricated by a process in which charged particles are passed through a track layer (144) to create charged-particle tracks (1461). The track layer is etched along the tracks to form apertures (1481) that are employed in defining corresponding cap regions (150A) over an underlying emitter layer (142). After removing the track layer, part of the emitter layer is removed using the cap regions as masks to control the extent of the emitter material removed. Electron-emissive elements (142D), typically in the shape of cones, are thereby formed in the remainder (142C) of the emitter layer. The electron emitter can also be provided with a gate electrode (158C).

公开(公告)号：HK1015188A1

公开(公告)日：1999-10-08

申请号：HK98116148

申请日：1998-12-28

Applicant: SILICON VIDEO CORP

Inventor： MACAULAY JOHN M ,  SPINDT CHRISTOPHER J ,  SEARSON PETER C ,  DUBOC ROBERT M

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J

Abstract: A method comprising the steps of: causing charged particles to pass through a track layer to form a multiplicity of charged-particle tracks therethrough; creating corresponding open spaces through the track layer by a procedure that entails etching the track layer along the charged-particle tracks; forming electron-emissive elements accessible through the open spaces in the track layer; and subsequently providing a patterned electrically non-insulating gate layer over the electron-emissive elements such that gate openings extend through the gate layer to enable each gate opening to expose at least one of the electron-emissive elements.

公开(公告)号：AU4913496A

公开(公告)日：1996-08-21

申请号：AU4913496

申请日：1996-01-31

Applicant: SILICON VIDEO CORP

Inventor： BERGERON DAVID L ,  MACAULAY JOHN M ,  BARTON ROGER W ,  MORSE JEFFREY D

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

公开(公告)号：AU7320294A

公开(公告)日：1995-02-06

申请号：AU7320294

申请日：1994-07-07

Applicant: MASSACHUSETTS INST TECHNOLOGY ,  SILICON VIDEO CORP

Inventor： GEIS MICHAEL W ,  MACAULAY JOHN M ,  TWICHELL JONATHAN C

IPC: H01J1/14 ,  H01J1/304 ,  H01J9/04