公开(公告)号：US20160163595A1

公开(公告)日：2016-06-09

申请号：US14888674

申请日：2014-04-30

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun AHN ,  Sang Wook AHN ,  Yong Woon LEE ,  Huy Chan JUNG ,  Do Young LEE

IPC: H01L21/768 ,  H01L21/683 ,  H01L21/306

CPC classification number: H01L21/76898 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7684 ,  H01L2221/68327 ,  H01L2221/68359

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract translation: 用于制造通孔硅通孔（TSV）的方法采用传统的沟槽绝缘工艺来容易地制造通孔硅通孔（TSV），从而实现通孔硅通孔（TSV）和通孔硅通孔（TSV）之间的有效电绝缘 硅。

公开(公告)号：US20160133603A1

公开(公告)日：2016-05-12

申请号：US14891635

申请日：2014-05-12

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Sang Wook AHN ,  Huy Chan JUNG ,  Yong Woon LEE ,  Do Young LEE

IPC: H01L25/065 ,  G11C7/10 ,  G11C7/06 ,  G11C5/06 ,  H01L23/528

CPC classification number: H01L25/0657 ,  G11C5/063 ,  G11C7/06 ,  G11C7/10 ,  G11C2207/005 ,  H01L23/49816 ,  H01L23/528 ,  H01L25/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract translation: 通过堆叠多个基板形成半导体存储器，并且通过数据转储线连接每个基板上的存储单元。 交换机可以介入存储器单元和数据转储线之间。 当每个基板的数据被数据转储线转储时，由于寄生成分引起的速度下降和功耗增加的问题可以被最小化。 此外，包括存储单元的核心电路可以设置在一个基板上，并且外围电路单元可以设置在剩余的基板上。

公开(公告)号：US20160373629A1

公开(公告)日：2016-12-22

申请号：US15101286

申请日：2014-11-27

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Huy Chan JUNG ,  Heui-Gyun AHN ,  Sang Wook AHN ,  Yong Woon LEE

IPC: H04N5/225 ,  H01L27/146

CPC classification number: H04N5/2257 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/16145 ,  H04N5/2252 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/2258

Abstract: The present invention provides an image processing package comprising: an image sensor for receiving an image of a subject, which is incident from the outside, in the form of light and converting the image of the subject into an image signal; and an image signal processor for processing the image signal which is output from the image sensor and reproducing the image of the subject, wherein the image processing package has a structure in which the image sensor is vertically stacked on the image signal processor.

Abstract translation: 本发明提供了一种图像处理包，包括：图像传感器，用于以光的形式从外部接收被摄体的图像，并将被摄体的图像转换为图像信号; 以及图像信号处理器，用于处理从图像传感器输出并再现被摄体的图像的图像信号，其中图像处理包具有图像传感器垂直堆叠在图像信号处理器上的结构。

公开(公告)号：US20160301888A1

公开(公告)日：2016-10-13

申请号：US15100501

申请日：2014-11-11

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Sang Wook AHN ,  Yong Woon LEE ,  Huy Chan JUNG ,  Heui-Gyun AHN

IPC: H04N5/378 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/353

CPC classification number: H04N5/378 ,  H04N5/341 ,  H04N5/3532 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/37455 ,  H04N5/3765

Abstract: The present invention relates to a technology with enables an image signal processor to output image data at a faster speed while using a memory having a smaller capacity. The image signal processor includes a pair of line memories for storing image data output from an analog-digital converter such that the image data alternates in units of horizontal lines, and outputting the stored image data in units of blocks according to a first-in-first-out method.

Abstract translation: 本发明涉及一种能够使图像信号处理器以更快的速度输出图像数据的技术，同时使用具有较小容量的存储器。 图像信号处理器包括一对行存储器，用于存储从模拟数字转换器输出的图像数据，使得图像数据以水平行为单位交替，并且以块为单位输出存储的图像数据， 先出方法。

公开(公告)号：US20160268373A1

公开(公告)日：2016-09-15

申请号：US15030347

申请日：2014-10-02

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Min Suk KO ,  Kyoung Sik PARK ,  Gab Hwan CHO ,  Heui Gyun AHN ,  Sang Wook AHN ,  Yong Woon LEE ,  Huy Chan JUNG

IPC: H01L29/06 ,  H01L27/146 ,  H01L23/373 ,  H01L23/367 ,  H01L23/467

CPC classification number: H01L29/0657 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/467 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor apparatus having a heat dissipating function and electronic equipment comprising the same includes a front surface on which semiconductor devices constituting a circuit a circuit are formed; and a rear surface including a convexo-concave surface. Thus, the heat dissipation effect of the semiconductor apparatus can be maximized even without attaching a heat dissipation plate thereto.

Abstract translation: 具有散热功能的半导体装置和包括该散热功能的电子设备包括形成有构成电路电路的半导体器件的正面; 以及包括凸凹表面的后表面。 因此，即使不附加散热板，也可以使半导体装置的散热效果最大化。

公开(公告)号：US20160086869A1

公开(公告)日：2016-03-24

申请号：US14891629

申请日：2014-05-09

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun AHN ,  Sang Wook AHN ,  Yong Woon LEE ,  Huy Chan JUNG ,  Sung Chun JUN

IPC: H01L23/367 ,  H01L23/522 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L23/3677 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/585 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.

Abstract translation: 通过利用在接合期间使用的内部连接器，具有改善的散热特性的半导体器件能够有效地将三维层叠结构的半导体器件内产生的热量排出到半导体器件的外部。