METHOD FOR PRODUCING AND TESTING A CORROSION-RESISTANT CHANNEL IN A SILICON DEVICE
    1.
    发明公开
    METHOD FOR PRODUCING AND TESTING A CORROSION-RESISTANT CHANNEL IN A SILICON DEVICE 有权
    用于生产,耐腐蚀渠道在硅组件测试

    公开(公告)号:EP1565932A4

    公开(公告)日:2006-09-13

    申请号:EP03786769

    申请日:2003-11-17

    Applicant: SMC KK

    Abstract: A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated (210) with either an organic compound resistant to attack by atomic fluorine or a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds (220) when activated by a plasma discharge. One example of such a gas is CF4, an inert gas that is easier and safer to work with than volatile gases like CIF3. The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested (230) in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.

    Abstract translation: 一种用于在硅器件的润湿路径制备耐腐蚀的信道的方法,使与腐蚀性化合物,色彩可以使用这样的装置:诸如氟。 一个MEMS装置的润湿路径涂覆有:(1)以由耐氟原子或攻击有机化合物(2)能够通过氟原子被钝化材料。 然后将该装置暴露于的气体没有分解成活性氟化合物当由等离子体放电激活。 搜索气体的一个例子是CF4,挥发性惰性气体中做更容易,更安全与合作不是像ClF 3的气体。 气体将钝化材料(如果适用的话)和任何腐蚀暴露的硅。 该装置以这样的方式搜索测试所做的润湿路径的任何不可接受的腐蚀将导致器件失效。 如果该设备正常工作,将润湿路径被认为是被氟或其它腐蚀性化合物的耐腐蚀,如适用。

    2.
    发明专利
    未知

    公开(公告)号:DE60319014D1

    公开(公告)日:2008-03-20

    申请号:DE60319014

    申请日:2003-11-17

    Applicant: SMC KK

    Abstract: A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated with either (1) an organic compound resistant to attack by atomic fluorine or (2) a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds when activated by a plasma discharge. One example of such a gas is CF 4 , an inert gas that is easier and safer to work with than volatile gases like ClF 3 . The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.

    3.
    发明专利
    未知

    公开(公告)号:DE60319014T2

    公开(公告)日:2009-01-29

    申请号:DE60319014

    申请日:2003-11-17

    Applicant: SMC KK

    Abstract: A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated with either (1) an organic compound resistant to attack by atomic fluorine or (2) a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds when activated by a plasma discharge. One example of such a gas is CF 4 , an inert gas that is easier and safer to work with than volatile gases like ClF 3 . The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.

Patent Agency Ranking