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1.发明申请HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开高效率光伏背接触太阳能电池结构及使用半导体晶圆的制造方法
公开(公告)号：WO2011072179A3
公开(公告)日：2011-11-17
申请号：PCT/US2010059783
申请日：2010-12-09
Applicant: SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/0216
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
Abstract: A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.
Abstract translation: 提供了使用半导体晶片的背接触背结太阳能电池和用于制造的方法。 背接触背结太阳能电池包括具有掺杂基极区域，光捕获正面表面和掺杂背面发射极区域的半导体晶片。 正面和背面介电层和钝化层提供增强的光俘获和内部反射。 背侧基极和发射极触点连接到金属互连上，在太阳能电池的背面形成交叉指状物和母线的金属化图案。
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2.发明公开HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开高效率光伏背接触太阳能电池结构和工艺，用于使用半导体晶圆
公开(公告)号：EP2510552A4
公开(公告)日：2014-11-05
申请号：EP10836723
申请日：2010-12-09
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL , HARWOOD DUNCAN , MANSOORI MAJID , WINGERT MICHAEL
IPC: H01L31/042 , H01L31/0216
CPC classification number: H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
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