公开(公告)号：JP2013112880A

公开(公告)日：2013-06-10

申请号：JP2011262421

申请日：2011-11-30

Applicant: Dainippon Screen Mfg Co Ltd ,  大日本スクリーン製造株式会社 ,  Solexel Inc ,  ソレクセル インコーポレーテッドSolexel, Inc.

Inventor： HAYASHI NORIYUKI ,  MIYAJI YASUYOSHI ,  YONEHARA SEIICHI ,  INAHARA TAKAMITSU ,  YONEHARA TAKAO ,  MOSLEHI MEHRDAD ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY

IPC: C25F7/00 ,  C25D11/32 ,  C25F3/12 ,  H01L21/306 ,  H01L21/3063

CPC classification number: C25D17/001 ,  C25D11/005 ,  C25D11/32 ,  C25D17/06 ,  C25D17/08 ,  C25D17/10 ,  H01L21/02002 ,  H01L21/67173 ,  H01L21/6723 ,  H01L21/67754 ,  H01L21/68707 ,  H01L29/06

Abstract: PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automatization and a batch process, and having a mechanism by which a substrate is held, transferred, and made into a part of an anodization tank, and a semiconductor substrate having a porous layer formed.SOLUTION: A plurality of substrates W are moved to a processing position while held by a left holder part 67 and a right holder part 69, and connected to an upper holder part 71 and a lower holder part 39, and then the whole circumferential surfaces of the plurality of substrates W are liquid-tight with an electrolyte solution in a reservoir 11. In this state, anodization processing is performed, and then the substrates W are discharged from the reservoir 11. Thus, the left holder part 67 and the right holder part 69 are structured along with the upper holder part 71 and the lower holder part 39 so as to be able to hold the substrates W in a liquid-tight state. Therefore, the anodization apparatus 1 suitable for automatization and a batch process is achieved, by which the plurality of the substrates W are transferred, and porous layers are formed. Also, according to the apparatus, the semiconductor substrate including porous layers efficiently and uniformly formed on both surfaces, the front and rear surfaces, can be provided.

Abstract translation: 要解决的问题：提供一种适用于自动化和分批处理的阳极氧化装置，并且具有将基板保持，转移并制成阳极氧化槽的一部分的机构，以及具有 形成多孔层。 解决方案：将多个基板W移动到处理位置，同时由左保持器部分67和右保持器部分69保持，并连接到上保持器部分71和下保持器部分39，然后整体 多个基板W的圆周表面在储存器11中用电解液液密。在该状态下，进行阳极氧化处理，然后基板W从储存器11排出。因此，左支架部分67和 右支架部分69与上保持器部分71和下保持器部分39一起构成，以便能够将基板W保持在液密状态。 因此，实现了适用于自动化和分批处理的阳极氧化装置1，通过该阳极氧化装置多个基板W被转印，形成多孔层。 此外，根据该装置，可以提供包括在前表面和后表面的两个表面上有效且均匀地形成的多孔层的半导体衬底。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012119570A

公开(公告)日：2012-06-21

申请号：JP2010269416

申请日：2010-12-02

Applicant: Dainippon Screen Mfg Co Ltd ,  Solexel Inc ,  ソレクセル インコーポレーテッドSolexel, Inc. ,  大日本スクリーン製造株式会社

Inventor： MIYAJI YASUYOSHI ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU ,  YONEHARA TAKAO ,  CARL JOSEPH CRAYMER ,  SUBRAHMANYAN TAMIRMANI

IPC: H01L21/3063 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automation and batch processing by devising a substrate holding mechanism.SOLUTION: In an anodization apparatus, when a plurality of substrates are loaded on a first support unit 57 by alienating the first support unit 57 and a second support unit 73 disposed in a storage tank 9, the plurality of substrates are supported such that only the lower parts of the peripheral surfaces thereof are liquid-tight with an electrolyte solution. When the second support unit 73 is coupled to the first support unit 57, the plurality of substrates are supported in a state where the remaining parts of the peripheral surfaces of the substrates are liquid-tight with the electrolyte solution, whereby the entire peripheral surfaces of the substrates are liquid-tight with the electrolyte solution. By allowing the first support unit 57 and the second support unit 73 to serve as a detachable substrate holder 41, the plurality of substrates are mechanically carried in or out to provide an anodization apparatus suitable for automation and batch processing.

Abstract translation: 要解决的问题：通过设计基板保持机构来提供适合于自动化和批量处理的阳极氧化装置。 解决方案：在阳极氧化装置中，当通过疏散第一支撑单元57和设置在储罐9中的第二支撑单元73将多个基板装载在第一支撑单元57上时，多个基板被支撑为 其周边表面的下部仅用电解液液密。 当第二支撑单元73联接到第一支撑单元57时，多个基板被支撑在基板的周边表面的其余部分与电解液液密的状态下，从而整个周边表面 基板与电解质溶液是液密的。 通过允许第一支撑单元57和第二支撑单元73用作可拆卸的基板支架41，多个基板被机械地承载或移出以提供适于自动化和批量处理的阳极氧化装置。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012119571A

公开(公告)日：2012-06-21

申请号：JP2010269417

申请日：2010-12-02

Applicant: Dainippon Screen Mfg Co Ltd ,  Solexel Inc ,  ソレクセル インコーポレーテッドSolexel, Inc. ,  大日本スクリーン製造株式会社

Inventor： MIYAJI YASUYOSHI ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU ,  YONEHARA TAKAO

IPC: H01L21/3063 ,  C25F7/00

Abstract: PROBLEM TO BE SOLVED: To provide an anodization apparatus capable of performing batch processing and enhancing an operation rate by minimizing electrode exchange frequency.SOLUTION: In an anodization apparatus, if a substrate holder 41 disposed in a storage tank 9 is allowed to hold a plurality of substrates and electrodes 21 and 23 are electrified, ions move between electrode tanks 21 and 23, which causes a chemical conversion reaction on the plurality of substrates through ion-exchange membranes 29 and 35. Therefore, batch processing that processes the plurality of substrates becomes possible. Moreover, the concentration of the electrolyte solution stored in electrode tanks 5 and 7 is set to be lower than that of the electrolyte solution stored in the storage tank 9. Therefore, since the chemical conversion reaction in the electrode tanks 5 and 7 is suppressed as compared to the inside of the storage tank 9, a local chemical conversion reaction caused at the electrodes 21 and 23 in the electrode tanks 5 and 7 is suppressed. Consequently, the degradation of the electrodes 21 and 23 can be minimized to enhance the operation rate of the apparatus.

Abstract translation: 要解决的问题：提供能够通过最小化电极交换频率来进行批量处理和提高操作速率的阳极氧化装置。 解决方案：在阳极氧化装置中，如果允许设置在储罐9中的基板保持件41保持多个基板，电极21和23通电，则离子在电极槽21和23之间移动，这导致化学 通过离子交换膜29和35在多个基板上的转化反应。因此，可以进行处理多个基板的批处理。 此外，电解槽5和7中储存的电解质溶液的浓度设定得低于储存在储罐9中的电解液的浓度。因此，由于电极槽5和7中的化学转化反应被抑制为 与储罐9的内部相比，抑制了在电极槽5和7中的电极21和23处引起的局部化学转化反应。 因此，电极21和23的劣化可以最小化，以提高装置的操作速度。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：WO2012040688A3

公开(公告)日：2012-08-16

申请号：PCT/US2011053183

申请日：2011-09-24

Applicant: SOLEXEL INC ,  YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

Inventor： YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

IPC: H01L21/306

CPC classification number: C25F3/12 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F7/00

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得可以高生产率地制造多孔半导体层（由单层或多层多孔半导体制成，例如多孔硅，包括单孔隙或多孔隙层）。 一些应用包括用于管芯分离和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅（使用具有最佳孔隙率及其随后的氧化的多孔硅形成）的MEMS分离和牺牲层的制造。 此外，本公开适用于光伏，MEMS的一般领域，包括传感器和致动器，独立或与集成半导体微电子学，半导体微电子学芯片和光电子集成。

公开(公告)号：EP2619790A4

公开(公告)日：2015-11-11

申请号：EP11827704

申请日：2011-09-24

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

IPC: C25F3/12 ,  C25F7/00

CPC classification number: C25F3/12 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F7/00

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.