公开(公告)号：AU2012362505B2

公开(公告)日：2015-08-20

申请号：AU2012362505

申请日：2012-12-26

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  COUTANT SOLENE ,  DESHAZER HEATHER ,  ANBALAGAN PRANAV ,  RATTLE BENJAMIN

IPC: H01L31/042 ,  H01L31/0236 ,  H01L31/18

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the back contact solar cell crystalline silicon substrate is then annealed to remove damage from the laser texturization process. Backside metallization is then formed on backside base and emitter regions.

公开(公告)号：AU2012362505A1

公开(公告)日：2014-08-14

申请号：AU2012362505

申请日：2012-12-26

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  COUTANT SOLENE ,  DESHAZER HEATHER ,  ANBALAGAN PRANAV ,  RATTLE BENJAMIN

IPC: H01L31/042 ,  H01L31/0236 ,  H01L31/18

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the back contact solar cell crystalline silicon substrate is then annealed to remove damage from the laser texturization process. Backside metallization is then formed on backside base and emitter regions.