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公开(公告)号：AU2016200610A1
公开(公告)日：2016-02-25
申请号：AU2016200610
申请日：2016-02-01
Applicant: SOLEXEL INC
Inventor： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
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公开(公告)号：AU2012362505B2
公开(公告)日：2015-08-20
申请号：AU2012362505
申请日：2012-12-26
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , RANA VIRENDRA V , COUTANT SOLENE , DESHAZER HEATHER , ANBALAGAN PRANAV , RATTLE BENJAMIN
IPC: H01L31/042 , H01L31/0236 , H01L31/18
Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the back contact solar cell crystalline silicon substrate is then annealed to remove damage from the laser texturization process. Backside metallization is then formed on backside base and emitter regions.
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公开(公告)号：AU2013267481A1
公开(公告)日：2015-01-22
申请号：AU2013267481
申请日：2013-05-29
Applicant: COUTANT SOLENE , SEUTTER SEAN , KOMMERA SWAROOP , ANBALAGAN PRANAV , SOLEXEL INC , KAPUR PAWAN , RATTLE BENJAMINE , DESHAZER HEATHER , DESHPANDE ANAND , MOSLEHI MEHRDAD , RANA VIRENDRA
Inventor： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
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公开(公告)号：AU2016200610B2
公开(公告)日：2017-12-07
申请号：AU2016200610
申请日：2016-02-01
Applicant: SOLEXEL INC
Inventor： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
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Patent Agency Ranking
公开(公告)号：AU2012362505A1
公开(公告)日：2014-08-14
申请号：AU2012362505
申请日：2012-12-26
Applicant: SOLEXEL INC
Inventor： MOSLEHI MEHRDAD M , RANA VIRENDRA V , COUTANT SOLENE , DESHAZER HEATHER , ANBALAGAN PRANAV , RATTLE BENJAMIN
IPC: H01L31/042 , H01L31/0236 , H01L31/18
Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the back contact solar cell crystalline silicon substrate is then annealed to remove damage from the laser texturization process. Backside metallization is then formed on backside base and emitter regions.
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公开(公告)号：MY184055A
公开(公告)日：2021-03-17
申请号：MYPI2014703566
申请日：2013-05-29
Applicant: SOLEXEL INC
Inventor： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
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公开(公告)号：AU2013237992A1
公开(公告)日：2014-11-13
申请号：AU2013237992
申请日：2013-03-28
Applicant: SOLEXEL INC
Inventor： RANA VIRENDRA V , MOSLEHI MEHRDAD M , ANBALAGAN PRANAV , DESHAZER HEATHER , COUTANT SOLENE , RATTLE BENJAMIN E , KRAMER KARL-JOSEF , KAPUR PAWAN
IPC: H01L31/042 , B23K26/36 , G01N21/65 , H01L31/18
Abstract: Methods and structures for fabricating photovoltaic back contact solar cells having multilevel metallization using laser via drilling end point detection are provided.
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8.发明申请ANNEALING FOR DAMAGE FREE LASER PROCESSING FOR HIGH EFFICIENCY SOLAR CELLS 审中-公开用于高效率太阳能电池的无损伤激光加工的退火
公开(公告)号：WO2014179366A8
公开(公告)日：2015-04-16
申请号：PCT/US2014035961
申请日：2014-04-29
Applicant: SOLEXEL INC
Inventor： RANA VIRENDRA V , MOSLEHI MEHRDAD M , KAPUR PAWAN , BENJAMIN RATTLE , DESHAZER HEATHER , COUTANT SOLENE , KOMMERA SWAROOP
IPC: H01L31/18 , H01L31/024 , H01L31/04
CPC classification number: H01L31/0682 , H01L21/268 , H01L21/324 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , Y02E10/547
Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。
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9.发明公开STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS 审中-公开结构和方法的形成邻国的，而不是根据邻近地区对于高高效背接触太阳能电池
公开(公告)号：EP2856512A4
公开(公告)日：2015-12-16
申请号：EP13798110
申请日：2013-05-29
Applicant: SOLEXEL INC , DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER DAWN , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
Inventor： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC: H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/068
CPC classification number: H01L31/022441 , H01L31/02167 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
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