公开(公告)号：MY167902A

公开(公告)日：2018-09-26

申请号：MYPI2013702563

申请日：2012-05-29

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

Abstract: The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.

公开(公告)号：WO2011133965A3

公开(公告)日：2012-02-02

申请号：PCT/US2011033706

申请日：2011-04-23

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

Inventor： DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate- based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

Abstract translation: 所公开的主题提供了一种用于通过利用也可用作有效ARC的双层钝化方案从基于晶体硅衬底的太阳能电池中的高效表面钝化获得超低表面复合速度的方法和结构。 双层钝化由湿化学氧化物的第一薄层或薄氢化非晶硅层构成。 第二层无定形氢化氮化硅膜沉积在湿化学氧化物或非晶硅膜的顶部。 然后进行该沉积，然后进行退火以进一步增强表面钝化。

公开(公告)号：WO2012162704A3

公开(公告)日：2013-03-28

申请号：PCT/US2012039891

申请日：2012-05-29

Applicant: SOLEXEL INC ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.

Abstract translation: 所公开的主题一般涉及薄膜或薄箔材料的沉积，更具体地涉及用于制造高效率太阳能电池的外延单晶或准单晶硅膜（epi膜）的沉积。 在操作中，公开了延长可再利用寿命并降低在硅和其它半导体太阳能电池的制造过程中使用的可重复使用的基板或模板的摊销成本的方法。

公开(公告)号：WO2012021880A3

公开(公告)日：2012-05-10

申请号：PCT/US2011047699

申请日：2011-08-13

Applicant: SOLEXEL INC ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  TAMILMANI SUBRAMANIAN ,  TOR SAM TONE ,  KAVARI RAHIM ,  RICOLCOL RAFAEL ,  KAMIAN GEORGE ,  LEIGH JOSEPH

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  TAMILMANI SUBRAMANIAN ,  TOR SAM TONE ,  KAVARI RAHIM ,  RICOLCOL RAFAEL ,  KAMIAN GEORGE ,  LEIGH JOSEPH

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/1896 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.

Abstract translation: 公开了一些机构，其中一些实施例中的半导体晶片，硅被重复地用作用于制造高效能的薄半导体太阳能电池基板的模板和载体。 公开了能够以一致的质量和高产率重复使用这些模板的机制。

公开(公告)号：EP2404317A4

公开(公告)日：2014-06-11

申请号：EP10749454

申请日：2010-03-08

Applicant: SOLEXEL INC

Inventor： RICOLCOL RAFAEL ,  KRAMER JOE ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L21/4763 ,  H01L27/142 ,  H01L31/18

CPC classification number: H01L21/30608 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2561558A4

公开(公告)日：2014-04-16

申请号：EP11772838

申请日：2011-04-23

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521