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42 records (took 0.021 seconds)

    1.
    发明专利
    未知

    公开(公告)号：DE60332017D1

    公开(公告)日：2010-05-20

    申请号：DE60332017

    申请日：2003-06-11

    Applicant: SONY CORP

    Inventor： ABE HITOSHI ,  ORII TOSHIHIKO ,  AKIMOTO OSAMU ,  MOCHIDA TOSHIHIKO ,  NAKAYAMA SHODAI

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L21/77 ,  H01L27/04 ,  H01L27/12 ,  H01L27/13

    Abstract: Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween. The signal accumulation capacitor (15) has a structure in which high-concentration semiconductor regions (15D) and (15S) of the first conduction type are formed on the semiconductor substrate (11), and an electrode (15G) is formed on the region between the semiconductor regions (15D) and (15S), with an insulating layer (12b) therebetween. A structure may be adopted in which a bias semiconductor region (17) is not provided, and the semiconductor regions (15D) and (15S) are made to serve also as the bias semiconductor region.

    2.
    发明专利
    未知

    公开(公告)号：DE69807603T2

    公开(公告)日：2003-04-24

    申请号：DE69807603

    申请日：1998-06-25

    Applicant: SONY CORP

    Inventor： AKIMOTO OSAMU

    IPC: G02F1/133 ,  G09G3/00 ,  G09G3/34 ,  G09G3/36 ,  H04N5/74

    Abstract: The invention provides an optical spatial modulation device capable of rewriting an image with a high degree of efficiency and implementing a very fast response speed and an extremely high intensity, and provides an image display apparatus employing the optical spatial modulation device. Created for each pixel of an optical spatial modulation device are a 1st memory (21) for storing pixel data of an image to be displayed, a 2nd memory (23) to which the pixel data stored in the 1st memory (21) is transferred and a driving means (24) driven in accordance with the pixel data transferred to the 2nd memory (23) to change the optical transmissivity, the optical reflectance or the polarisation state of the pixel. When displaying an image, first of all, pixel data is stored in the 1st memory (21) of each of all pixels composing the image. Then, the pixel data is transferred from the 1st memory (21) to the 2nd memory (23). Finally, the driving means (24) of each of the pixels changes the optical transmissivity, the optical reflectance or the polarisation state of the pixel in accordance with the pixel data transferred to the 2nd memory (23).

    4.
    发明专利
    未知

    公开(公告)号：DE69807603D1

    公开(公告)日：2002-10-10

    申请号：DE69807603

    申请日：1998-06-25

    Applicant: SONY CORP

    Inventor： AKIMOTO OSAMU

    IPC: G02F1/133 ,  G09G3/00 ,  G09G3/34 ,  G09G3/36 ,  H04N5/74

    Abstract: The invention provides an optical spatial modulation device capable of rewriting an image with a high degree of efficiency and implementing a very fast response speed and an extremely high intensity, and provides an image display apparatus employing the optical spatial modulation device. Created for each pixel of an optical spatial modulation device are a 1st memory (21) for storing pixel data of an image to be displayed, a 2nd memory (23) to which the pixel data stored in the 1st memory (21) is transferred and a driving means (24) driven in accordance with the pixel data transferred to the 2nd memory (23) to change the optical transmissivity, the optical reflectance or the polarisation state of the pixel. When displaying an image, first of all, pixel data is stored in the 1st memory (21) of each of all pixels composing the image. Then, the pixel data is transferred from the 1st memory (21) to the 2nd memory (23). Finally, the driving means (24) of each of the pixels changes the optical transmissivity, the optical reflectance or the polarisation state of the pixel in accordance with the pixel data transferred to the 2nd memory (23).

    Book type display apparatus
    6.
    发明专利
    Book type display apparatus 未知

    公开(公告)号：GB2260844A

    公开(公告)日：1993-04-28

    申请号：GB9219573

    申请日：1992-09-16

    Applicant: SONY CORP

    Inventor： AKIMOTO OSAMU ,  YAMAMOTO MASANOBU

    IPC: G06F3/147

    Abstract: The present invention is directed to a book type display apparatus in which two display units are provided as double-spread pages like a book and which includes a random access function and a data acquisition function as an electronic text so that the reader can read this book type display apparatus as a book. Two casings (31), (32) of box type are made foldable at the center and display units such as LCD panels (24L), (24R) are provided on both casings (31)' (32), whereby data or graphic pattern of each page can be simultaneously displayed on the two display units in a double-spread page fashion.

    INSPECTING METHOD, SEMICONDUCTOR DEVICE, AND DISPLAY
    7.
    发明公开
    INSPECTING METHOD, SEMICONDUCTOR DEVICE, AND DISPLAY 审中-公开
    INSTREKTIONSVERFAHREN，HALBLEITERBAUELEMENT UND ANZEIGE

    公开(公告)号：EP1414005A4

    公开(公告)日：2005-01-19

    申请号：EP02751828

    申请日：2002-08-02

    Applicant: SONY CORP

    Inventor： ORII TOSHIHIKO ,  AKIMOTO OSAMU ,  ABE HITOSHI ,  ANDO NAOKI

    IPC: G01R31/00 ,  G02F1/13 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  G09G3/20 ,  G09G3/36 ,  G02F1/133 ,  G09G3/00

    CPC classification number: G02F1/136259 ,  G02F2001/136254 ,  G09G3/3648

    Abstract: A method for inspecting a semiconductor substrate constituting a liquid crystal display by reliably detecting a change in potential due to a failure of a pixel cell driver circuit irrespective of the decreased ratio of the pixel capacitance to the wiring capacitance because of the small size of the display and higher definition. The method comprises a charge retaining step of allowing pixel capacitors connected to pixel switches selected from among all the pixel switches connected to one data line to retain the charge and a detecting step for simultaneously detecting the charge retained by the pixel capacitors at the charge retaining step from the one data line.

    Abstract translation: 一种用于测试形成液晶显示装置的半导体衬底的方法，即使当像素电容与布线电容的比例随着尺寸的减小而降低时，也能够精确地检测对应于像素单元驱动电路的缺陷状态的电位变化的方法 或增加液晶显示装置的定义。 该方法包括：电荷保持步骤，用于使与连接到一个数据线的所有像素开关中选择的多个像素开关连接的像素电容保持电荷; 以及检测步骤，用于从所述一条数据线同时检测所述电荷保留步骤中的多个像素电容中保留的电荷。

    DISPLAY DRIVE METHOD, DISPLAY ELEMENT, AND DISPLAY
    8.
    发明公开
    DISPLAY DRIVE METHOD, DISPLAY ELEMENT, AND DISPLAY 审中-公开
    ANZEIGEANSTEUERVERFAHREN，ANZEIGEELEMENT UND ANZEIGE

    公开(公告)号：EP1416467A4

    公开(公告)日：2006-09-27

    申请号：EP02760585

    申请日：2002-08-08

    Applicant: SONY CORP

    Inventor： ORII TOSHIHIKO ,  AKIMOTO OSAMU ,  ABE HITOSHI ,  YOKOKURA TORU

    IPC: G02F1/1362 ,  G09G3/36 ,  G02F1/133 ,  G09G3/20

    CPC classification number: G09G3/3677 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2310/0248 ,  G09G2310/0251 ,  G09G2310/06

    Abstract: Two voltages for scanning a scanning line, i.e., AVD1 below a gate breakdown voltage of a switching element and AVD2 over the gate breakdown voltage are selectively used. After the scanning of a scanning line by the AVD1 is started, a data line is precharged. Thereafter, the scanning voltage is changed to the AVD2. At this change, a voltage corresponding to the precharging voltage is generated in a pixel capacitor. Therefore, even if the AVD2 over the gate breakdown voltage is applied to the pixel switch, it is possible to cause a potential difference not exceeding the breakdown voltage between the terminals of the switching element.

    Abstract translation: 用于扫描线扫描的电压可以在开关元件的栅极耐受电压和高于栅极耐压的AVD2之间的AVD1之间切换。 在水平消隐期间内，以AVD1开始扫描线的扫描，然后进行数据线的预充电。 此后，将电压切换到AVD2。 由于在这个时间点，像素电容器中产生与预充电电压相对应的电位，所以即使将超过耐受电压的AVD2施加到像素开关，也可以产生不超过耐电压的电位差 在开关元件的端子之间。

    SEMICONDUCTOR DEVICE, REFLECTION TYPE LIQUID CRYSTAL DISPLAY DEVICE, AND REFLECTION TYPE LIQUID CRYSTAL PROJECTOR
    9.
    发明公开
    SEMICONDUCTOR DEVICE, REFLECTION TYPE LIQUID CRYSTAL DISPLAY DEVICE, AND REFLECTION TYPE LIQUID CRYSTAL PROJECTOR 有权
    半导体部件，反射式和反射式液晶投影机的液晶显示元件

    公开(公告)号：EP1513005A4

    公开(公告)日：2007-02-14

    申请号：EP03733360

    申请日：2003-06-11

    Applicant: SONY CORP

    Inventor： ABE HITOSHI ,  ORII TOSHIHIKO ,  AKIMOTO OSAMU ,  MOCHIDA TOSHIHIKO ,  NAKAYAMA SHODAI

    IPC: G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L27/04 ,  H01L27/12 ,  H01L27/13

    CPC classification number: G02F1/1368 ,  G02F1/136213 ,  G02F1/136277 ,  G02F2203/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/13

    Abstract: Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween. The signal accumulation capacitor (15) has a structure in which high-concentration semiconductor regions (15D) and (15S) of the first conduction type are formed on the semiconductor substrate (11), and an electrode (15G) is formed on the region between the semiconductor regions (15D) and (15S), with an insulating layer (12b) therebetween. A structure may be adopted in which a bias semiconductor region (17) is not provided, and the semiconductor regions (15D) and (15S) are made to serve also as the bias semiconductor region.

    Semiconductor device, reflection type liquid crystal display device, and reflection type liquid crystal projector
    10.
    发明专利
    Semiconductor device, reflection type liquid crystal display device, and reflection type liquid crystal projector 未知

    公开(公告)号：AU2003242279B2

    公开(公告)日：2008-10-02

    申请号：AU2003242279

    申请日：2003-06-11

    Applicant: SONY CORP

    Inventor： ABE HITOSHI ,  ORII TOSHIHIKO ,  NAKAYAMA SHODAI ,  AKIMOTO OSAMU ,  MOCHIDA TOSHIHIKO

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L21/77 ,  H01L27/12 ,  H01L27/13

    Abstract: Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween. The signal accumulation capacitor (15) has a structure in which high-concentration semiconductor regions (15D) and (15S) of the first conduction type are formed on the semiconductor substrate (11), and an electrode (15G) is formed on the region between the semiconductor regions (15D) and (15S), with an insulating layer (12b) therebetween. A structure may be adopted in which a bias semiconductor region (17) is not provided, and the semiconductor regions (15D) and (15S) are made to serve also as the bias semiconductor region.

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