公开(公告)号：DE69606123T2

公开(公告)日：2000-08-24

申请号：DE69606123

申请日：1996-08-20

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  HIRONAKA KATSUYUKI ,  IKEDA YUJI

IPC: C01G29/00 ,  C01G33/00 ,  C01G35/00 ,  C04B35/453 ,  C04B35/495 ,  C23C14/08 ,  C23C16/40 ,  C23C16/56 ,  H01G4/12 ,  H01L21/822 ,  H01L27/04 ,  C04B35/00

Abstract: The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.

公开(公告)号：DE69606123D1

公开(公告)日：2000-02-17

申请号：DE69606123

申请日：1996-08-20

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  HIRONAKA KATSUYUKI ,  IKEDA YUJI

IPC: C01G29/00 ,  C01G33/00 ,  C01G35/00 ,  C04B35/453 ,  C04B35/495 ,  C23C14/08 ,  C23C16/40 ,  C23C16/56 ,  H01G4/12 ,  H01L21/822 ,  H01L27/04 ,  C04B35/00

Abstract: The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.

公开(公告)号：JPH11121696A

公开(公告)日：1999-04-30

申请号：JP28676197

申请日：1997-10-20

Applicant: SONY CORP

Inventor： HIRONAKA KATSUYUKI ,  SUGIYAMA MASATAKA ,  ISOBE CHIHARU ,  AMI TAKAAKI ,  IKEDA YUJI ,  WATABE KOJI

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a dielectric capacitor, using a Perovskite crystal surface dielectric film and semiconductor storage device having dielectric capacitors such that a good-characteristics dielectric capacitor is realized, even with a reduced capacitor area. SOLUTION: For manufacturing a dielectric capacitor using an SBT film as a dielectric film, an SBT film 6 is obtd. by successively forming an IrO2 film 2 and an Ir film 3 as a lower electrode, an amorphous film 4 as a precursor to the SBTA film, and a Pt film 5 as an upper electrode on an Si substrate 1, after patterning the Pt film 5, the amorphous film 4, the Ir film 3 and IrO3 films 5, 4, 3, 2 into the shape of a dielectrical capacitor, and heat treating to change the amorphous phase into the amorphous film 4 to crystal phase of a Perovskite crystal structure.

公开(公告)号：JP2007306022A

公开(公告)日：2007-11-22

申请号：JP2007183391

申请日：2007-07-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NOGUCHI TAKASHI ,  USUI SETSUO ,  KANETANI YASUHIRO ,  KUNII MASABUMI ,  IKEDA YUJI

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a silicon thin film which allows silicon monocrystal particle assemblages with less particle diameter variation to be regularly placed on a base substance. SOLUTION: A silicon thin film contains a silicon monocrystal particle assemblage with approximate rectangular silicon monocrystal particles placed in matrix on a base substance. In addition, more than 30% in the quantity of silicon monocrystal particles constituting the silicon monocrystal particle assemblage have ä100} aspects for the base substance surface and its average film thickness is 1×10 -8 m or 4×10 -8 m. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种硅薄膜，其允许具有较小粒径变化的硅单晶颗粒组合被规则地放置在基础物质上。 解决方案：硅薄膜包含硅单晶颗粒组合，其具有矩阵放置在基体上的近似矩形硅单晶颗粒。 此外，构成硅单晶粒子组合物的硅单晶粒子的量的30％以上对于基体物质表面具有ä100}方面，其平均膜厚度为1×10 -8 m或4 ×10 -8 米。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JPH0778760A

公开(公告)日：1995-03-20

申请号：JP16872193

申请日：1993-06-14

Applicant: SONY CORP

Inventor： TSUKAMOTO HIRONORI ,  IKEDA YUJI

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To form a crystal prescribed in planar orientation in a prescribed region by forming a region where crystal growing nuclei are different in genera tion rate through an ion implantation method and to enhance a MOS transistor in characteristics by forming its channel region on the above crystal. CONSTITUTION:An amorphous semiconductor layer 13 is formed on an insulating layer 12 provided to a substrate 11, them an ion implanting mask 15 is formed on a prescribed region of the amorphous semiconductor layer 13, and a region 16 where no impurity is introduced is selectively provided to the topmost layer of the amorphous semiconductor layer 13 under the ion implantation mask 15 through an oblique ion implantation method. Thereafter, through a solid growth annealing treatment, a crystal grain 18 prescribed in planar orientation is selectively grown in solid phase from the region 16 where no impurity is introduced to form a crystal region 19. The crystal region 19 is irradiated with an energy beam to be fused and then recrystallized into a recrystallized region. Moreover, the channel region of a MOS transistor is formed on a crystal region or a recrystallized region.

公开(公告)号：JPH11145056A

公开(公告)日：1999-05-28

申请号：JP30555297

申请日：1997-11-07

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  IKEDA YUJI

IPC: C30B29/04 ,  C30B29/06 ,  C30B29/08 ,  H01L21/20 ,  H01L21/205 ,  H01L29/04 ,  H01L29/16

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor material, which has more superior electric characteristic compared to a polycrystalline semiconductor material, and which can easily be formed on various substrates. SOLUTION: A semiconductor material is constituted of plural crystal grains 3a of almost single crystal constituted of a semiconductor. Crystal grains 3a are preferentially oriented in one face orientation, 100} face orientation, 111} face orientation or 110} face orientation, and grain boundaries 3b of the adjacent crystal grains 3a are grating-matched at least in a part, for example. In the case of 100} face orientation, the crystal grains 3a have almost square forms and are arranged in grids. In the case of 111} face orientation, the crystal grains 3a have almost regular hexagonal forms and are arranged in a tortoiseshell form. In the case of 110} face orientation, the crystal grains 3a have almost hexagonal forms and are arranged in the tortoiseshell form. The semiconductor constituting the crystal grains 3a is a IV group semiconductor having the diamond-type crystal structure of Si, Ge and C.

公开(公告)号：JPH1041234A

公开(公告)日：1998-02-13

申请号：JP8872897

申请日：1997-03-24

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  KANETANI YASUHIRO ,  KUNII MASABUMI ,  IKEDA YUJI ,  USUI SETSUO

IPC: H01L21/8247 ,  B81B1/00 ,  B81C1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a silicon thin film which can arrange regularly silicon single crystal particle group on an insulating film, and form it easily in a short time. SOLUTION: An amorphous or polycrystalline silicon layer 13 formed on a substrate 12 is irradiated with a pulsed UV ray beam, thereby forming a silicon thin film 14 composed of silicon single crystal particle group on the substrate 12. In the above forming method of a silicon thin film, the traveling amount L of UV beam irradiation position from irradiation finish of a rectangular UV ray beam to the next irradiation start of the rectangular UV ray beam is set at most 40μm, and the ratio R (=L/W) of the traveling amount to the width W of the UV ray beam which is measured along the traveling direction is set to be 0.1-5%. Thereby a silicon thin film composed of nearly rectangular silicon single crystal particle group arranged in a lattice type on the substrate is formed. The preferred orientation to the surface of the substrate of silicon single crystal particles is almost (100).

公开(公告)号：JPH09129689A

公开(公告)日：1997-05-16

申请号：JP28424195

申请日：1995-10-31

Applicant: SONY CORP

Inventor： IKEDA YUJI

IPC: G01N23/04 ,  G01N1/06 ,  H01L21/306 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To manufacture the specimen for electronic microscope in required and sufficient space by a method wherein a specimen film coat.formed on a semiconductor substrate through the intermediary of a stopper layer is firstly etched away in the depth from surface side to the stopper layer successively to be etched away. SOLUTION: An Si semiconductor substrate 1 is coated with a metallic film made of Al or Cu, etc., for the observation by transmission type electronic microscope through the intermediary of a stopper layer 2. Next, the Si substrate 1 is immersed in a blended solution of fluoric acid and nitric acid as an etchant of the Si substrate 1 for etching the substrate 1 thus externally exposed. Next, the residual body is immersed in another blended solution of fluoric acid and water as another etchant of the stopper layer 2. By the performance of the second etching step, the specimen film 3 only is left on the holding substrate.

公开(公告)号：JPH07296761A

公开(公告)日：1995-11-10

申请号：JP8479194

申请日：1994-04-22

Applicant: SONY CORP

Inventor： KAWATE YASUTOSHI ,  IKEDA YUJI

IPC: G01N1/28 ,  H01J37/20 ,  H01J37/26

Abstract: PURPOSE:To extend the range to which TEM is applicable to allow the evaluation of fine structure of a semiconductor element having high resolution. CONSTITUTION:A wafer having an laminated film 3 on a base 2 is cut to prepare two small pieces 1, silane coupling agent films 4 are formed on the surfaces of the respective laminated films 3, and the silane coupling agent films 4 are mutually opposed and adhered through an adhesive 4 consisting of an epoxy resin to manufacture an adhered block 10. Thereafter, the adhered block 10 is cut vertically to the adhered surface to form a thin plate 6, and the surface of the thin plate 6 is polished, and then further partially thinned by ion milling to manufacture a sample. Since even the laminated layers having films conventionally difficult to adhere such as Al films formed on the top layers can be mutually adhered, a sample for sectional observation by TEM can be manufactured.

公开(公告)号：JPH0959021A

公开(公告)日：1997-03-04

申请号：JP21369495

申请日：1995-08-22

Applicant: SONY CORP

Inventor： AMI TAKAAKI ,  HIRONAKA KATSUYUKI ,  IKEDA YUJI

IPC: C01G29/00 ,  C01G33/00 ,  C01G35/00 ,  C04B35/453 ,  C04B35/495 ,  C23C14/08 ,  C23C16/40 ,  C23C16/56 ,  H01G4/12 ,  H01L21/822 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To obtain a bismuth compound as a dielectric substance by controlling the composition during deposition process for a bismuth compound precursor to suppress developing electroconductive byproduct phase. SOLUTION: This lamellar bismuth compound as a dielectric substance with high electrical insulation is obtained by introducing a stock gas in an oxidative atmosphere under a pressure of 0.01-50Torr to deposit a bismuth compound precursor on a substrate followed by heat treatment in an oxidative atmosphere. This bismuth compound is composed of the main phase of the formula Bi2 (Sra , Bab , Cac ) (Tad Nbe )2 O9 [(a)-(e) are each 0-1, (a+b+c)=1, (d+e)=1] and byproduct phase of high electrical insulation such as a multiple compound with pyrochroir structure [e.g. (Bi, (Sr, Ba, Ca))2-x (Ta, Nb)2 O7 ].