Abstract:
A matrix-addressed type liquid crystal display apparatus having switching devices such as TFTs is provided, featuring that an increased effective voltage can be applied without causing hysteresis in V-T characteristics. Namely, by substantially increasing a value of an applicable voltage in excess of which a display defect starts to appear, a high numerical aperture and a high contrast ratio have been achieved at the same time. In the LCD apparatus of the present invention, a gap between adjacent reverse tilt domains each formed in a portion of a pixel which is arranged corresponding to an arbitrary pixel electrode becomes broader than a minimum gap between adjacent pixel electrodes corresponding thereto, or a thickness of a liquid crystal cell in the portion between adjacent reverse tilt domains is set thinner than a thickness of a liquid crystal cell in the portion of the pixel.
Abstract:
A matrix-addressed type liquid crystal display apparatus having switching devices such as TFTs is provided, featuring that an increased effective voltage can be applied without causing hysteresis in V-T characteristics. Namely, by substantially increasing a value of an applicable voltage in excess of which a display defect starts to appear, a high numerical aperture and a high contrast ratio have been achieved at the same time. In the LCD apparatus of the present invention, a gap between adjacent reverse tilt domains each formed in a portion of a pixel which is arranged corresponding to an arbitrary pixel electrode becomes broader than a minimum gap between adjacent pixel electrodes corresponding thereto, or a thickness of a liquid crystal cell in the portion between adjacent reverse tilt domains is set thinner than a thickness of a liquid crystal cell in the portion of the pixel.
Abstract:
PROBLEM TO BE SOLVED: To provide a liquid crystal display device in which a leakage current is reduced and a flicker phenomenon is suppressed. SOLUTION: The liquid crystal display device is equipped with a TFT substrate having pixel electrodes and thin film transistor elements formed thereon, a counter substrate and a liquid crystal. The channel width of the drain region 3 side to be connected to the pixel electrodes is formed so as to be narrower than that of the source region 2 side to be connected to a data line. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To improve image quality by preventing holding characteristic of an image from being degraded by occurrence of a leak current in an off state and flickering or afterimage from occurring during reverse driving. SOLUTION: An inter-layer insulating film 16 between a pixel switching element 102 and signal wiring 202 is formed such that a first thickness D1 formed in a region corresponding to a second source/drain region 102b is larger than a second thickness D2 in a region corresponding to a gate electrode 102g. Consequently, the leak current in the off state which is caused between the second source/drain region 102b and the signal wiring 202 during reverse driving with a high potential HIGH is equalized to that during reverse driving with a low potential LOW. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To make pixel pitches small and the aperture ratio large without complicating the manufacturing processes. SOLUTION: The array substrate has a layer of electrooptic materials, such as liquid crystals on its surface facing the counter substrate, and also has a lamination structure including scanning lines 5, data lines 6, pixel electrodes 11, transistors, storage capacitors, and a fixed electrode layer 17 shading light and applying a common voltage to the storage capacitor electrodes. Using the scanning lines 5, data lines 6, transistors, and storage capacitors as the constituents of an electrooptical device arranged in the shading region around the pixel electrodes 11, connecting the pixel electrodes 11 and the semiconductor layer of the transistors through the 1st relay electrode layer 18 which is the same layer as the fixed electrode layer 17 and the 2nd relay electrode layer which is the same layer as the data lines 6, and dividing the fixed electrode layer 17 along the line between the adjacent data lines 6, the 1st relay electrode layer 18 is formed on the divided area in the state separated from the fixed electrode layer 17. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To achieve a high numerical aperture and a high contrast ratio at the same time, in a matrix-addressed type liquid crystal display apparatus having switching devices such as TFTs provided therein, by increasing an effective voltage without causing hysteresis in V-T characteristics, namely, by increasing a value of an applicable voltage in excess of which a display defect starts to appear. SOLUTION: In the LCD apparatus having a liquid crystal cell which at least comprises: a pair of substrates placed opposite to each other; a common electrode disposed on one substrate out of the pair of substrates and covered with an alignment layer; a plurality of pixel electrodes arranged in a matrix on the other substrate and covered with the alignment layer; switching devices connected to the respective pixel electrodes; and a liquid crystal sealed in between mutually facing alignment layers of the pair of substrates, a thickness of the liquid crystal cell in the portion between adjacent reverse tilt domains is set thinner than a thickness of the liquid crystal cell in the portion of the pixel. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To make a high opening ratio and a high contrast ratio compatible with each other in a matrix type liquid crystal display device equipped with a switching element such as a TFT(thin film transistor) by increasing an effective voltage without producing hysteresis in a V-T(voltage-transmittance) characteristic, i.e., by heightening the applied voltage where a display failure beings to be caused. SOLUTION: In the matrix type liquid crystal display device utilizing the switching element such as the TFT, a distance between a reverse tilt domain 8 formed in a pixel part corresponding to an arbitrary pixel electrode 14 inside a liquid crystal cell and a reverse tilt domain 14 formed in a pixel part corresponding to an adjacent pixel electrode 14 is made wider than the shortest distance (4) between the electrodes of the pixel electrode 14 or the thickness of the liquid crystal cell between the mutually adjacent reverse tilt domains 8 is made narrower than the thickness of the liquid crystal cell in the pixel part.
Abstract:
PROBLEM TO BE SOLVED: To make pixel pitches small and an aperture ratio large without complicating the manufacturing process. SOLUTION: As a construction of an electro-optical device which has a lamination structure including scanning lines 5, data lines 6, pixel electrodes 11, transistors, storage capacitors, and a fixed electrode layer 17 on an array substrate having a layer of an electro-optic material interposed between it and a counter substrate, the fixed electrode layer 17 is disconnected between it and the data line 6 neighboring in a first direction, a first relay electrode layer 18 is formed on the disconnected section, and the pixel electrode 11 and the transistor are electrically connected to each other via the first relay electrode layer 18, film thickness of an insulating layer 25 formed on the fixed electrode layer 17 and the first relay electrode layer 18 is set to be 0.5 times or more of a distance between pixel electrodes adjacent to each other in the first direction, and the fixed electrode layer 17 and the storage capacitor are electrically connected to each other via a second relay electrode layer 15 in the same layer as the data line 6. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a narrow pitch and a high numerical aperture of pixels without making a manufacturing process complicated. SOLUTION: An electrooptical device is constituted having a laminated structure including a scan line 5, a data line 6, a pixel electrode 11, a transistor, a storage capacitor, and a fixed electrode layer 17 on an array substrate holding an electrooptical substance layer between counter substrates. The fixed electrode layer 17 is parted between data lines 6 which are adjacent in a first direction, a first repeating electrode layer 18 is formed at the parted part, and the pixel electrode 11 and the transistor are electrically connected through the first repeating electrode layer 18. The storage capacitor is composed of a storage capacitor electrode 13 and a semiconductor layer 12 of the transistor opposed to the storage capacitor electrode 13, and the fixed electrode layer 17 and the storage capacitor electrode 13 are electrically connected through a second relaying electrode layer 15 in the same layer with the data line 6. COPYRIGHT: (C)2008,JPO&INPIT