公开(公告)号：GB2201542B

公开(公告)日：1991-03-13

申请号：GB8729406

申请日：1987-12-17

Applicant: SONY CORP

Inventor： HIRATA TATSUSHIRO ,  UBA TOMOHISA

IPC: H01J29/02 ,  H01J29/06

Abstract: A cathode ray tube having an internal magnetic shield formed of an inner magnetic plate and an outer magnetic plate which intersect at an acute angle, the distance from the upper terminal end of the inner magnetic plate to the inner surface of the panel, and the distance from the upper end of the outer magnetic plate to the inner surface of the panel being adjusted so as to satisfy a predetermined relationship, thus improving the magnetic shield effect.

公开(公告)号：DE602005001806T2

公开(公告)日：2008-04-17

申请号：DE602005001806

申请日：2005-06-06

Applicant: SONY CORP

Inventor： SEGWA YUJI ,  HIRATA TATSUSHIRO

IPC: C12Q1/68 ,  G01N21/64 ,  C12M1/00 ,  C12M1/34 ,  C12N15/09 ,  G01N21/66 ,  G01N21/76 ,  G01N21/78 ,  G01N27/02 ,  G01N33/53 ,  G01N33/543 ,  G01N33/566 ,  G01N37/00

Abstract: Disclosure herein is a hybridization detecting unit including, a reaction area for providing a field for hybridization between nucleic acid for detection and target nucleic acid, and opposed electrodes disposed so that an electric field can be applied to a medium stored or retained in the reaction area, wherein an electrode surface of at least one of the opposed electrodes has depression parts.

公开(公告)号：DE602005001806D1

公开(公告)日：2007-09-13

申请号：DE602005001806

申请日：2005-06-06

Applicant: SONY CORP

Inventor： SEGWA YUJI ,  HIRATA TATSUSHIRO

IPC: C12Q1/68 ,  G01N21/64 ,  C12M1/00 ,  C12M1/34 ,  C12N15/09 ,  G01N21/66 ,  G01N21/76 ,  G01N21/78 ,  G01N27/02 ,  G01N33/53 ,  G01N33/543 ,  G01N33/566 ,  G01N37/00

Abstract: Disclosure herein is a hybridization detecting unit including, a reaction area for providing a field for hybridization between nucleic acid for detection and target nucleic acid, and opposed electrodes disposed so that an electric field can be applied to a medium stored or retained in the reaction area, wherein an electrode surface of at least one of the opposed electrodes has depression parts.

公开(公告)号：DE60140076D1

公开(公告)日：2009-11-12

申请号：DE60140076

申请日：2001-12-20

Applicant: SONY CORP

Inventor： YAMAGATA HIDEO ,  KOUMOTO TAKEYOSHI ,  ATSUUMI KENJI ,  NEGORO YOICHI ,  HIRATA TATSUSHIRO ,  NOGUCHI TAKASHI

IPC: H01L21/205 ,  C23C16/22 ,  C30B25/02 ,  H01L21/20 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

公开(公告)号：DE602005016625D1

公开(公告)日：2009-10-29

申请号：DE602005016625

申请日：2005-02-18

Applicant: SONY CORP

Inventor： KATO YOSHIHIRO ,  ITO YOSHINORI ,  HIRATA TATSUSHIRO ,  OKAYAMA KATSUMI ,  KOBAYASHI KAORU

IPC: G11C11/16 ,  H01L23/00 ,  G11C11/15 ,  H01L21/8246 ,  H01L23/552 ,  H01L27/105

公开(公告)号：GB2201542A

公开(公告)日：1988-09-01

申请号：GB8729406

申请日：1987-12-17

Applicant: SONY CORP

Inventor： HIRATA TATSUSHIRO ,  UBA TOMOHISA

IPC: H01J29/02 ,  H01J29/06

Abstract: A cathode ray tube having an internal magnetic shield formed of an inner magnetic plate and an outer magnetic plate which intersect at an acute angle, the distance from the upper terminal end of the inner magnetic plate to the inner surface of the panel, and the distance from the upper end of the outer magnetic plate to the inner surface of the panel being adjusted so as to satisfy a predetermined relationship, thus improving the magnetic shield effect.

公开(公告)号：EP2848988A4

公开(公告)日：2016-05-04

申请号：EP13788449

申请日：2013-04-17

Applicant: SONY CORP

Inventor： YAGAMI KOJIRO ,  ABE HIDESHI ,  HIRATA TATSUSHIRO

IPC: G02F1/01 ,  G01J1/02 ,  G01J5/04 ,  G01J5/08 ,  G01J5/58 ,  H01L27/144 ,  H04N5/33

CPC classification number: H04N5/33 ,  G01J5/00 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/58 ,  G01J2005/0077 ,  G02F1/353 ,  G02F2202/36 ,  G02F2203/11 ,  G02F2203/12 ,  H01L27/14649 ,  H04N17/002

公开(公告)号：EP1345260A4

公开(公告)日：2008-05-28

申请号：EP01994979

申请日：2001-12-20

Applicant: SONY CORP

Inventor： YAMAGATA HIDEO ,  KOUMOTO TAKEYOSHI ,  ATSUUMI KENJI ,  NEGORO YOICHI ,  HIRATA TATSUSHIRO ,  NOGUCHI TAKASHI

IPC: H01L21/205 ,  C23C16/22 ,  C30B25/02 ,  H01L21/20 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

CPC classification number: H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66242

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

公开(公告)号：EP1460063A4

公开(公告)日：2005-06-08

申请号：EP02805885

申请日：2002-12-18

Applicant: SONY CORP

Inventor： MATSUI ERIKO ,  KAINO YURIKO ,  KUNIKIYO TOSHIYUKI ,  HIRATA TATSUSHIRO ,  MORI YOSHIFUMI

IPC: C07D207/46 ,  C07D207/32 ,  C07D207/323

CPC classification number: C07D207/32 ,  C07D207/323

Abstract: Novel metal complexes of heterocyclic aromatic compounds, which exhibit low activation energies, are structurally stabilized, permit structural modulation, and can function favorably as molecular devices in the field of technology. Such a complex is composed of a transition metal (such as silver ion) as the central atom and basic ligands of a five-membered heterocyclic aromatic compound (such as pyrrole ring), and can be controlled in the number of atoms (electrons) participating in the ability to coordinate through change in the position of the central atom by an internal factor such as charge transfer or an external factor such as application of an electric field or a change in the acidity of the surrounding atmosphere. Further, the complexes can give polymeric substances which can cause conformational change in accordance with the position of the central atom.