公开(公告)号：US3585713A

公开(公告)日：1971-06-22

申请号：US3585713D

申请日：1969-03-24

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  IWASHITA SAKAN ,  HISHIKAWA SHINICHI

IPC: H01L21/00 ,  H01L23/485 ,  B01J17/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A SEMICONDUCTOR DEVICE HAVING OHMIC CONTACTS APPLIED TO A SEMICONDUCTOR WAFER THROUGH WINDOWS IN A GLASS OR OTHER INSULATING LAYER ON A SURFACE OF THE WAFER IS PROVIDED WITH METAL BUMPS OR PROTUBERANCES FOR CONNECTING THE CONTACTS WITH CORRESPONDING CONDUCTORS OF A HEADER OR PRINTED CIRCUIT BY COVERING THE ENTIRE WAFER SURFACE WITH A LAYER OF TIN OR OTHER METAL HAVING NO AFINITY FOR THE INSULATING LAYER AND STRONG AFFINITY FOR THE CONTACTS, SELECTIVELY DEPOSITING ON REGIONS OF THE TIN LAYER WHICH CORRESPOND TO AT LEAST PORTIONS OF THE CONTACTS METAL, SUCH AS LEAD OR AN ALLOY THEREOF, FOR FORMING THE DESIRED PROTUBERANCES OR BUMPS AND FOR WHICH THE TIN LAYER HAS A STRONG AFFINITY, AND THEN HEATING THE RESULTING STRUCTURE SO THAT THE TIN LAYER IS AGGREGATED ON THE OHMIC CONTACTS AS A RESULT OF ITS SURFACE TENSION AND CAUSES A CORRESPONDING AGGREGATION OF THE BUMP OR PROTUBERANCE FORMING METAL.

公开(公告)号：DE1915148A1

公开(公告)日：1969-11-27

申请号：DE1915148

申请日：1969-03-25

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  HISHIKAWA SHINICHI ,  IWASHITA SAKAN

IPC: H01L21/00 ,  H01L23/485 ,  B01J17/00

Abstract: 1,217,293. Semi-conductor devices. SONY CORP. 25 March, 1969 [25 March, 1968], No. 15549/69. Heading H1K. A contact bump on a semi-conductor device is produced by securing a metal electrode to a surface of the device, forming a metal layer over the surface and over the electrode, the metal of the layer having an affinity for the metal electrode but not for the surface, forming a metal bump over the electrode, and heating to a temperature at which the metal layer fuses and is aggregated into the bump. As shown, a region 12 of a silicon IC is contacted by depositing a glass layer on an existing glass or silicon dioxide coating to form an insulating layer 13, photoetching to form a window 13a and depositing an electrode 14 comprising a layer 14a of aluminium coated with a layer 14b of titanium and a layer 14c of nickel, Fig. 2A. A layer 15 of tin is deposited over the surface of glass layer 13 and electrode 14, Fig. 2B. A metal mask is placed on the surface and lead is vapour deposited to form a contact bump 17 1 which is provided with a surface layer 18 of silver if desired, Fig. 2C. The mask is then removed and the arrangement is heated to melt layer 15 which aggregates into the contact bump 17 due to surface tension, Fig. 2D. The excess lead portions 17a 1 (Fig. 2C) which form round the contact bump due to the gap G between the mask and the device are simultaneously aggregated into the contact bump. Any excess tin remaining on the surface may be removed by coating with a flux, e.g. resin, and heating. The electrode 14 may comprise a single layer of A1.

公开(公告)号：CA893386A

公开(公告)日：1972-02-15

申请号：CA893386D

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  IWASHITA SAKAN ,  HISHIKAWA SHINICHI

IPC: H01L21/00 ,  H01L23/485

公开(公告)号：JPS52132781A

公开(公告)日：1977-11-07

申请号：JP4971676

申请日：1976-04-30

Applicant: SONY CORP

Inventor： HISHIKAWA SHINICHI ,  NAGAKUBO YOSHIO ,  OKAYAMA MASAKI

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314

Abstract: PURPOSE:To simplify the process and to increase the reliability, by avoiding the immersion of etching solution from pin hole thru the window opening without using the etching process.

公开(公告)号：JPS60110127A

公开(公告)日：1985-06-15

申请号：JP21738183

申请日：1983-11-18

Applicant: SONY CORP

Inventor： KAMIGURI KOUICHI ,  HISHIKAWA SHINICHI ,  SAKANE KAZUNARI

IPC: H01L21/52 ,  H01L21/28 ,  H01L21/58 ,  H01L29/43

Abstract: PURPOSE:To obtain a stable electrode structure which has excellent electrical contact, mechanical and temperature properties and does not show aging by sequentially laminating, on an Si region, a first layer mainly composed of Au, a second layer consisting of Ag and a third layer consisting of Ni. CONSTITUTION:The surface other than the rear surface of an Si substrate 1 allowing formation of semiconductor elements is covered by coverage of wax and the rear surface is formed to the predetermined thickness by grinding or etching. This rear surface is washed and the Au layer (first layer) is vacuum deposited thereon. Moreover, an Ag layer (second layer) 22, an Ni layer (third layer) 23 and an Au layer (fourth layer) 24 are sequentially vacuum deposited, for example, by the electron beam heating process on said washed surface. These stacked layers form an electrode structure body 25. The fourth layer 24 is stacked in case the heat processing is carried out under the acidic ambient in the assembling process. A substrate 1 having such electrode structure body 25 is heat processed under the inactive gas ambient and it is formed as a collector electrode C.