公开(公告)号：US3585713A

公开(公告)日：1971-06-22

申请号：US3585713D

申请日：1969-03-24

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  IWASHITA SAKAN ,  HISHIKAWA SHINICHI

IPC: H01L21/00 ,  H01L23/485 ,  B01J17/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A SEMICONDUCTOR DEVICE HAVING OHMIC CONTACTS APPLIED TO A SEMICONDUCTOR WAFER THROUGH WINDOWS IN A GLASS OR OTHER INSULATING LAYER ON A SURFACE OF THE WAFER IS PROVIDED WITH METAL BUMPS OR PROTUBERANCES FOR CONNECTING THE CONTACTS WITH CORRESPONDING CONDUCTORS OF A HEADER OR PRINTED CIRCUIT BY COVERING THE ENTIRE WAFER SURFACE WITH A LAYER OF TIN OR OTHER METAL HAVING NO AFINITY FOR THE INSULATING LAYER AND STRONG AFFINITY FOR THE CONTACTS, SELECTIVELY DEPOSITING ON REGIONS OF THE TIN LAYER WHICH CORRESPOND TO AT LEAST PORTIONS OF THE CONTACTS METAL, SUCH AS LEAD OR AN ALLOY THEREOF, FOR FORMING THE DESIRED PROTUBERANCES OR BUMPS AND FOR WHICH THE TIN LAYER HAS A STRONG AFFINITY, AND THEN HEATING THE RESULTING STRUCTURE SO THAT THE TIN LAYER IS AGGREGATED ON THE OHMIC CONTACTS AS A RESULT OF ITS SURFACE TENSION AND CAUSES A CORRESPONDING AGGREGATION OF THE BUMP OR PROTUBERANCE FORMING METAL.

公开(公告)号：CA893386A

公开(公告)日：1972-02-15

申请号：CA893386D

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  IWASHITA SAKAN ,  HISHIKAWA SHINICHI

IPC: H01L21/00 ,  H01L23/485

公开(公告)号：DE1915148A1

公开(公告)日：1969-11-27

申请号：DE1915148

申请日：1969-03-25

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  HISHIKAWA SHINICHI ,  IWASHITA SAKAN

IPC: H01L21/00 ,  H01L23/485 ,  B01J17/00

Abstract: 1,217,293. Semi-conductor devices. SONY CORP. 25 March, 1969 [25 March, 1968], No. 15549/69. Heading H1K. A contact bump on a semi-conductor device is produced by securing a metal electrode to a surface of the device, forming a metal layer over the surface and over the electrode, the metal of the layer having an affinity for the metal electrode but not for the surface, forming a metal bump over the electrode, and heating to a temperature at which the metal layer fuses and is aggregated into the bump. As shown, a region 12 of a silicon IC is contacted by depositing a glass layer on an existing glass or silicon dioxide coating to form an insulating layer 13, photoetching to form a window 13a and depositing an electrode 14 comprising a layer 14a of aluminium coated with a layer 14b of titanium and a layer 14c of nickel, Fig. 2A. A layer 15 of tin is deposited over the surface of glass layer 13 and electrode 14, Fig. 2B. A metal mask is placed on the surface and lead is vapour deposited to form a contact bump 17 1 which is provided with a surface layer 18 of silver if desired, Fig. 2C. The mask is then removed and the arrangement is heated to melt layer 15 which aggregates into the contact bump 17 due to surface tension, Fig. 2D. The excess lead portions 17a 1 (Fig. 2C) which form round the contact bump due to the gap G between the mask and the device are simultaneously aggregated into the contact bump. Any excess tin remaining on the surface may be removed by coating with a flux, e.g. resin, and heating. The electrode 14 may comprise a single layer of A1.

公开(公告)号：JPH05299313A

公开(公告)日：1993-11-12

申请号：JP12552492

申请日：1992-04-17

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  KOJIMA AKIRA ,  KIZAKIHARA TOSHIROU ,  KATO TAIJI ,  MATSUOKA HIROAKI ,  MOTOHORI ISAO

IPC: H01L21/02

Abstract: PURPOSE:To fix dust which is brought in during treating process or dust generated in a device, to a site to which a voltage is applied, and prevent the dust scattering in the device, by previously applying a positive voltage and a negative voltage to the parts facing a site of the device in which wafers are loaded in the treating process of semiconductor wafers. CONSTITUTION:In a device, semiconductor wafers are worked, carried, and stored. Semiconductor wafers are carried in or carried out from a cleaning vessel 1 of the equipment. Mutually facing side walls 11a, 11b of the vessel 1 are electrically divided. Electrodes 12a and 12b are arranged on the side walls 11a and 11b, respectively. Either one of a positive voltage and a negative voltage is applied to each of the electrodes 12a and 12b. Dust which is brought in during each process or dust generated in the equipment is immediately fixed on the facing parts to which the voltages are applied. Hence the dust brought in the equipment and the generated dust do not float and scatter, so that the inside of the equipment can be kept in desired cleanliness.

公开(公告)号：JPH06342841A

公开(公告)日：1994-12-13

申请号：JP15300393

申请日：1993-05-31

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  KOJIMA AKIRA ,  FUKUNAGA TAKAYUKI ,  KIZAKIHARA TOSHIROU

IPC: B65G49/00 ,  F24F7/06 ,  H01L21/677 ,  H01L21/68

Abstract: PURPOSE:To provide a semiconductor manufacturing system which can surely prevent the pollution of semiconductor components by dust, and besides can enable the cut down of the amount of investment on facilities and running cost. CONSTITUTION:This system is equipped with a clean tunnel 10 for carrying a plurality of semiconductor components into a plurality of semiconductor manufacture devices, a component shifter 11 for delivering the semiconductor components between the said clean room 10 and each semiconductor manufacture device, and a variable-volume clean booth 12 for performing specified maintenance work to this clean tunnel 10, each of the semiconductor manufacture device, or the component shifter 11.

公开(公告)号：JPH06316305A

公开(公告)日：1994-11-15

申请号：JP13112593

申请日：1993-05-07

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  KOJIMA AKIRA ,  KIZAKIHARA TOSHIROU ,  FUKUNAGA TAKAYUKI

IPC: B65G1/02 ,  B65G1/00 ,  B65G49/07 ,  F24F7/06 ,  H01L21/677 ,  H01L21/68

Abstract: PURPOSE:To provide a wafer storing device capable of preventing the contamination of a wafer surface under storing and downsizing the whole device. CONSTITUTION:A wafer storing device has a wafer storing chamber 2 in the vacuum state provided in the inner part of a device body 1, and carrying-in and carrying-out parts 7, 8 for delivering a wafer between wafer carrying devices 5, 6. Further, the device is provided with a vacuum reserve chamber 16 for keeping the vacuum state of the wafer storing chamber 2 while delivering the wafer between the wafer carrying devices 5, 6 and the wafer storing chamber 2.

公开(公告)号：JPS63121652A

公开(公告)日：1988-05-25

申请号：JP26588386

申请日：1986-11-08

Applicant: SONY CORP

Inventor： KANEDA YOSHIYUKI ,  ARITA KOICHIRO ,  OSAKO JUNICHI

IPC: B29C45/37 ,  C23C14/08

Abstract: PURPOSE:To obtain a metal mold for molding plastics having satisfactory heat resistance, releasability and slidability as well as superior wear resistance and a long service life by forming an Al2O3 film or i-C film by ion plating on the surface of a metal mold made or a light alloy. CONSTITUTION:The Al2O3 film or i-C film is formed by ion plating on the surface of a metal mold made of a light alloy such as an Al alloy. The pref. thickness of the formed film is about 1-5mum. The wear resistance of the metal mold is improved, the deterioration of the dimensional accuracy is prevented and the service life is prolonged. The film has very high smoothness and superior thermal stability and improves the heat resistance, slidability and releasability of the metal mold.