公开(公告)号：JPS60229386A

公开(公告)日：1985-11-14

申请号：JP8486884

申请日：1984-04-26

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  ODA TATSUJI ,  IMAI TOSHIHIRO

IPC: H01L21/265 ,  H01S5/00 ,  H01S5/20

Abstract: PURPOSE:To obtain a semiconductor laser diode having stable characteristics by forming a non-current region to a semiconductor by implanting at least one kind of ions of He, Be, Li and B. CONSTITUTION:An N type first clad layer 2, a P type or N type active layer 3, a P type clad layer 4 and a P type low resistivity cap layer 5 are shaped on an N type base body 1 through epitaxial growth in succession. A mask 7 is formed on the cap layer 5, and boron B is implanted in depth intruding to the thickness of one part of the second clad layer 4 from the upper section of the cap layer 5 to shape a non-current injecting region 21 having high resistance. The mask is removed, and electrodes 7, 8 are applied, thus obtaining a semiconductor laser diode having stable characteristics. He, Be, Li, etc. can be used besides B as implanting ions.

公开(公告)号：JPH07249433A

公开(公告)日：1995-09-26

申请号：JP3868694

申请日：1994-03-09

Applicant: SONY CORP

Inventor： IMAI TOSHIHIRO

IPC: H02J7/00 ,  H01M10/44 ,  H01M10/48

Abstract: PURPOSE:To save a battery, which is possible to be charged, by selecting a charge mode in response to the voltage at the time of charging, and judging possibility of charging on the basis of the voltage after a predetermined time passes. CONSTITUTION:A charging circuit 6 is switched to a trickle charging mode by a switching circuit 8 over a first predetermined time from the starting of charging of a storage battery 11, and when the voltage exceeds a predetermined value, a control device 13 switches the charging circuit 6 to a quick charging mode till the voltage achieves a second voltage a little lower than the peak voltage of the storage battery 11, and when the voltage achieves the second voltage, the control device 13 switches the charging circuit 6 to the trickle charging mode again. In the case where the voltage does not achieve the first predetermined value after a predetermined time passes, a second predetermined time is set in a timer 14, and the charging circuit 6 is switched to the super quick charging mode. At this stage, in the case where the voltage does not achieve the first predetermined value after the second predetermined time passes, the storage battery 11 is judged impossible to be charged, and an informing means 17 informs it. Even in the case where the voltage does not achieve a predetermined value till the first predetermined time passes, charging can be performed if a battery is possible to be charged.

公开(公告)号：JPS61131583A

公开(公告)日：1986-06-19

申请号：JP25474284

申请日：1984-11-30

Applicant: Sony Corp

Inventor： IMAI TOSHIHIRO

IPC: H01L21/301 ,  H01S5/00 ,  H01S5/02

CPC classification number: H01S5/0202

Abstract: PURPOSE: To prevent a junction diode from being short-circuited by a method wherein the exposing part of the active layer of the semiconductor laser on its side surface is protected with an insulating film.
CONSTITUTION: An N type stud layer 2, an active layer 3, an N type stud layer 4 and a P
+ type semiconductor layer 5 are formed in order on the surface of an N
+ type wafer-shaped semiconductor substrate 1 consisting of GaAs and the P
+ type semiconductor layer 5 is made in such a way as to have an electri cal insulating property partially. After that, stripped electrode films 8 on the P side are formed on the surface of the semiconductor layer 5. Then, an etching is performed on the surface of the semiconductor layer 5 using the electrode films 8 as masks to form a groove 9 and a scribing (cleavage) is performed to obtain bar-shaped semiconductor substrates 1a. A treatment to coat a protec tive film 13 having an electrical insulating property is performed on both side surfaces of the groove 9, whereon each bar-shaped semiconductor substrate 1a fronts, and both end surfaces of each substrate 1a. After that, a scribing is performed along the groove 9, and a pelletizing is performed to obtain an individual semiconductor laser.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：通过半导体激光器的侧面的有源层的曝光部分被绝缘膜保护的方法防止结二极管短路。 构成：在N +型晶片状半导体衬底1的表面上依次形成N型柱状层2，有源层3，N型柱状层4和P +型半导体层5 由GaAs构成，P +型半导体层5以部分电绝缘性的方式制作。 之后，在半导体层5的表面上形成P侧的剥离电极膜8.然后，使用电极膜8作为掩模，对半导体层5的表面进行蚀刻，形成槽9和 进行划片（切割）以获得棒状半导体基板1a。 在每个条形半导体基板1a前面的槽9的两侧表面和每个基板1a的两个端面上进行具有电绝缘性的保护膜13的涂覆处理。 之后，沿凹槽9进行划线，并进行造粒以获得单独的半导体激光器。

公开(公告)号：JPS59104190A

公开(公告)日：1984-06-15

申请号：JP21410682

申请日：1982-12-06

Applicant: Sony Corp

Inventor： IMAI TOSHIHIRO

IPC: H01S5/00 ,  H01S5/028

CPC classification number: H01S5/028

Abstract: PURPOSE:To simultaneously form a protecting film in many semiconductor laser elements without necessity of the use of a fixing chuck by performing a vapor phase growth in the formation of the protecting film. CONSTITUTION:A semiconductor laser element body 11 is placed on a flat supporting base 12. The first electrode surface 13 of the body 11 is opposed in contact to the base 12, thereby forming a protecting film 15. Then, the body 11 is grown in vapor phase upside down, a protecting film 18 of the second different material is formed on the overall surface excpet the second electrode surface 14 of the body 11. Then, with the film 18 as a mask the first protecting film is selectively etched. Further, the film 18 is selectively etched under the etching condition having sufficiently large selection ratio, thereby removing all the second protecting film. Thus, a semiconductor laser element in which the first protecting film remains only on the side surface including the light emitting surfaces 16, 17, and the surfaces 13, 14 are exposed is obtained.

Abstract translation: 目的：为了在许多半导体激光元件中同时形成保护膜，而不需要通过在保护膜的形成中进行气相生长而使用固定卡盘。 构成：将半导体激光元件主体11放置在平坦的支撑基座12上。主体11的第一电极表面13与基座12相接触，从而形成保护膜15.然后， 蒸气相倒置，在整个表面上形成第二不同材料的保护膜18，从而排除主体11的第二电极表面14.然后，以膜18作为掩模，选择性地蚀刻第一保护膜。 此外，在具有足够大的选择比的蚀刻条件下选择性地蚀刻膜18，从而除去所有的第二保护膜。 因此，获得其中第一保护膜仅保留在包括发光表面16,17和表面13,14的侧表面的半导体激光元件。

公开(公告)号：JP2001307573A

公开(公告)日：2001-11-02

申请号：JP2000124453

申请日：2000-04-25

Applicant: SONY CORP

Inventor： FUKUMOTO TETSURO ,  IMAI TOSHIHIRO

IPC: H01H13/06 ,  H01H9/04

Abstract: PROBLEM TO BE SOLVED: To provide a structure for an operating button for stable switch operation even in the event of an error in accurate dimensions, reduction of a parts count and costs, and miniaturization of a device. SOLUTION: When an operating button 300 is depressed, the operating button 300 slides to the pressed direction. The second plate spring 600 is thrusted to the side of the first plate spring 500 and bent by a base end section 300C in the operating button 300. The plate spring 500 is bent by the thrusted part 610 on the second plate spring 600 to the side of the switch 200. The plate spring 500 press a movable body 200A on the switch 200, which is turned on. When the thrusting operation of the operating button 300 is released, forces of the plate springs 500 and 600, and a compression coil spring 420 press back the operating button 300. Thrust of the plate spring 500 directed to the movable body 200A on the switch 200 is released.

公开(公告)号：JPH10154848A

公开(公告)日：1998-06-09

申请号：JP36919997

申请日：1997-12-29

Applicant: SONY CORP

Inventor： FUJIMAKI YOSHITSUGU ,  NAGASHIMA KENJI ,  YOKOYAMA MORITO ,  TSUBOI KUNIO ,  IMAI TOSHIHIRO ,  OGASAWARA ATSUSHI

IPC: H01S5/00 ,  H01S5/022 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To simplify assembling work and to enhance productivity while avoiding adverse effect on the characteristics of a photodiode and the like by exposing a lead having a mounting part and a part of other terminal lead out leads to the outside, integrating other leads commonly through resin molding and proving a recess for receiving a semiconductor laser and connecting the leads electrically. SOLUTION: A semiconductor laser LD, a photodiode and bonding parts of lead wires 18 for connecting these leads 11, 12 are arranged in the recess 14 of a protective resin molding 13. Consequently, heat dissipation effect is enhanced while reducing the cost, characteristics are stabilized while enhancing mass productivity and the reliability can be enhanced through a simple structure.

公开(公告)号：JPS62137892A

公开(公告)日：1987-06-20

申请号：JP27977185

申请日：1985-12-12

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  ODA TATSUJI ,  IMAI TOSHIHIRO

IPC: H01L21/265 ,  H01S5/00

Abstract: PURPOSE:To obtain a semiconductor device which is long-lived and has uniform characteristics by forming a non-current injection region by ion-implanting one of He, Be, Li and B in the semiconductor. CONSTITUTION:The formation of a non-current region for a semiconductor, such as a GaAs compound semiconductor, is formed by ion-implanting at least one kind out of the following specified light elements other than without using protons: helium He, beryllium Be, lithium Li and boron B: When this forming technigue applies to a gain guide type semiconductor laser of a stripe structure, an N-type AlxGa1-xAs first clad layer 2 and a P-type or N-type AlyGa1-yAs active layer, for example, and moreover, a P-type AlxGa10xAs second clad layer 4 and a P low-resistivity cap layer 5 are epitaxially grown in order on an N-type GaAs substrate 1 and the active layer and thereafter, a metal masking layer or a mask 20 of wire or so on to be extended in one direction is arranged on the cap layer 5 and boron B is implanted with a specific accelerating energy in such a depth that it intrudes from a top of the cap layer 5 into part of the thickness of the second clad layer 4.

公开(公告)号：JPS61121486A

公开(公告)日：1986-06-09

申请号：JP24384584

申请日：1984-11-19

Applicant: Sony Corp

Inventor： IMAI TOSHIHIRO

IPC: H01S5/00 ,  H01S5/02

CPC classification number: H01S5/0201

Abstract: PURPOSE: To prevent a tracking error signal from deformation due to changes in the tangential skew angle relative to the zero-order beam optical recording body by a method wherein the laser-projecting face of a semiconductor laser is converted into a coarse face with the light-emitting portion under a mask.
CONSTITUTION: A number of laser bars 9 are placed in long, rectangular recesses 11 provided on a masking substrate 10. The lower half of the laser-projecting end face of each of semiconductor lasers 1 is exposed, to be covered by a pro tecting films 13. Next, the laser bars 9 are taken out of the masking substrate 10, to have their surfaces 14 rendered coarse by etching with the protecting films 13 serving as masks. A process follows wherein anisotropic etching is accomplished for the removal of the protective films 13 from the surfaces whereafter the protecting films 13 are retained on the laser-projecting end faces only. Scribing is effected for dicing whereby every semiconductor laser 1 is developed into a pellet.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：为了防止跟踪误差信号由于相对于零级光束记录体的切向偏斜角的变化而变形，其中半导体激光器的激光投射面被转换为粗糙面 - 掩模下的发光部分。 构成：将多个激光棒9放置在设置在掩模基板10上的长方形的凹部11中。每个半导体激光器1的激光投射端面的下半部分被暴露，被保护膜 接下来，将激光棒9从掩模衬底10中取出，通过用作掩模的保护膜13进行蚀刻使其表面14变粗糙。 一种工艺如下，其中进行各向异性蚀刻以从表面去除保护膜13，之后保护膜13仅保留在激光投射端面上。 对划片进行划线，从而将每个半导体激光器1显影成颗粒。