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公开(公告)号：GB2128402B
公开(公告)日：1986-03-05
申请号：GB8326055
申请日：1983-09-29
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：GB2128402A
公开(公告)日：1984-04-26
申请号：GB8326055
申请日：1983-09-29
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：FR2534079B1
公开(公告)日：1987-11-13
申请号：FR8315257
申请日：1983-09-26
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：FR2534079A1
公开(公告)日：1984-04-06
申请号：FR8315257
申请日：1983-09-26
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：DE3335371A1
公开(公告)日：1984-04-05
申请号：DE3335371
申请日：1983-09-29
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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Patent Agency Ranking
公开(公告)号：JPH04372163A
公开(公告)日：1992-12-25
申请号：JP17594091
申请日：1991-06-20
Applicant: SONY CORP
Inventor： ODA TATSUJI
Abstract: PURPOSE:To form a pattern aligned in high accuracy on a pattern disposed on an intermediate laminating surfaces after semiconductor substrates are laminated, on a polished surface. CONSTITUTION:After a pattern 2 is formed on a surface 1a of a first semiconductor substrate 1, a pattern 3 is formed in alignment with the pattern 2 on a rear surface 1b by a photolithography using a both-side mask aligner. Then, after a second semiconductor substrate 5 is laminated on a front surface 1a side of the substrate 1, a pattern 6 is again formed in alignment with the pattern 3 on the surface of the substrate 5 by a photolithography using the both-side mask aligner. Thereafter, after the substrate 1 is polished and etched to a predetermined thickness, a pattern 7 is further formed in alignment with the pattern 6 on the polished surface by a photolithography using the both-side mask aligner.
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公开(公告)号：JPH04315472A
公开(公告)日：1992-11-06
申请号：JP8259391
申请日：1991-04-15
Applicant: SONY CORP
Inventor： HARADA KOICHI , NEGISHI MICHIO , ODA TATSUJI
IPC: H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/3722
Abstract: PURPOSE:To contrive to improve the opening ratio of a light-receiving element in a solid-state image pickup element for high grade material. CONSTITUTION:In a solid image pickup element equipped with an image pickup part 1 composed of a shift register 5 provided in the manner of corresponding to each row of a plurality of light-receiving elements 4 arranged in a matrix shape and comprising, on each shift register 5, shunt and shade wiring 21 which is connected with the transfer electrode 9 of the shaft register 5, the shunt and shade wiring 21 is formed by the two-layer structure of a high-melting point metal layer 23 and a low-melting metal layer, e.g. Al layer 24 on the first metal layer 23.
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公开(公告)号：JPH03237757A
公开(公告)日：1991-10-23
申请号：JP3239090
申请日：1990-02-15
Applicant: SONY CORP
Inventor： ODA TATSUJI
IPC: H01L27/148 , H01L27/14
Abstract: PURPOSE:To provide a solid state image sensing device to realize low smear by forming a refraction layer through an insulating film at a sidewall of a charge transfer electrode layer to form a surface of the refraction layer at an angle which allows light directed from a surface thereof to the refraction layer to be totally reflected to the sidewall at an interface thereof. CONSTITUTION:A sensor part 2 and a charge transfer part 3 are formed on a surface of a silicon substrate 1 and a transfer electrode 5 is formed thereon through a silicon oxide film 4. A silicon oxide film 7 is applied to a sidewall 5s at the side of the sensor of the transfer electrode 5. A silicon oxide film 8 is also formed above the transfer electrode 5, and a light blocking layer 9 is formed thereon, which consists of an aluminum layer. A silicon nitride film 6 which is a refraction layer is further formed on the sidewall 5s. The angle between an interface 6b between the refraction layer of the silicon nitride film 6 and the silicon oxide film 7 and a surface 6a of the silicon nitride film 6 is 90 deg.. In a CCD imager of such a structure, an interface between the silicon nitride layer 6 and the silicon oxide film 7 functions as a total reflection surface.
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公开(公告)号：JPS63241968A
公开(公告)日：1988-10-07
申请号：JP7509987
申请日：1987-03-28
Applicant: SONY CORP
Inventor： ODA TATSUJI
Abstract: PURPOSE:To effectively suppress a parasitic effect and to realize a reduction in the area of an electrode section by forming a recess to a well region from an impurity diffused region, and forming a wiring electrode layer in the recess. CONSTITUTION:A wiring electrode layer 2 is formed in a recess 1 to a well region 11 from an impurity diffused region 12. As a result, the layer 2 for short- circuiting the region 12 to the region 11 is disposed near the bottom of the region 11 by the formation of the recess 1. Thus, a potential control to the whole region 11 is facilitated, and a defect, such as a parasitic effect is effectively suppressed. The area of the region 11 can be reduced, and the area efficiency of the whole element can be improved.
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公开(公告)号：JPS63115130A
公开(公告)日：1988-05-19
申请号：JP26163986
申请日：1986-11-01
Applicant: SONY CORP
Inventor： TSUKIKI KAZUNORI , ODA TATSUJI
Abstract: PURPOSE:To control the position of the optical axis of a light beam and the position of a focus without providing any mechanical movable part by applying refractive index control voltages between refractive index control electrodes and controlling the refractive indexes of dielectrics with the refractive index control voltages. CONSTITUTION:The dielectric 3 for tracking is varied in refractive index with the refractive index control voltage for tracking which is applied between refractive index control electrodes 4 and 4 to shift the optical axis of the laser beam LB in position. Further, a dielectric 5 for focusing is varied in refractive index with a refractive index control voltage for focusing which is applied between refractive index control electrodes 6 and 6 to shift the beam LB in focus position. Then shift in the position of the optical axis and focus position are made in such directions that a tracking error and a focus error are eliminated. Therefore, the light beams passing through the dielectrics can be shifted in position in parallel or in focus position without providing any mechanical movable part.
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