公开(公告)号：JPH10223901A

公开(公告)日：1998-08-21

申请号：JP22507797

申请日：1997-08-21

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IMANAGA TOSHIHARU

IPC: H01L29/78 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To provide a GaN(gallium nitride) based field effect transistor capable of handling larger input amplitude making use of a gate insulation film. SOLUTION: A channel layer 3 and a gate insulation film 4 are laminated on a substrate 1 through a buffer layer 2 in order of precedence, and a gate electrode 7 is arranged on it. A source electrode 5 and a drain electrode 6 are on both sides of the gate electrode 7 and electrically connected to the channel layer 3 through the openings 4a and 4b. The channel layer 3 is composed of n-type GaN, and the gate insulation film 4 is composed of AlN(aluminum nitride). The AlN has a high Schottky barrier because of being superior to insulation and can handle a large input amplitude. This can also form an inversion layer in an enhancement mode and the same operation as Si-MOS(silicon metal oxide semiconductor) can be made.

公开(公告)号：JPS62189724A

公开(公告)日：1987-08-19

申请号：JP3110286

申请日：1986-02-15

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IMANAGA TOSHIHARU ,  HASE ICHIRO ,  KANEKO KUNIO ,  WATABE SHOZO

IPC: H01L21/205

Abstract: PURPOSE:To effectively control the growing conditions of a film by providing means for monitoring the growing conditions of the film by the reflected lights incident in a direction substantially perpendicular to the surfaces of a plurality of substrates to facilitate the growing velocity and/or the composition of the film grown on the substrates. CONSTITUTION:A reflected light on a substrate 1 is emitted externally of a bell-jar 5 from an optical window 7a, then incident to a photomultiplier 13, detected, its output signal is amplified by a lock-in amplifier 14, then input to a data acquisition unit 15, and a reflected intensity is recorded as a signal B1. A laser light 10 emitted from a laser light source 9 and reflected on a beam splitter 12 is incident to and detected by a photomultiplier 16, its output signal is amplified by a lock-in amplifier 17, input to the data acquisition unit 15, and recorded as a signal A1. The unit 15 is connected through a growth controller 18 with an MFC controller 19, which controls an MFC for adjusting the quantity of growing gas fed in the jar 5.

公开(公告)号：JPS62189723A

公开(公告)日：1987-08-19

申请号：JP3110186

申请日：1986-02-15

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IMANAGA TOSHIHARU ,  HASE ICHIRO ,  KANEKO KUNIO ,  WATABE SHOZO

IPC: H01L21/66 ,  H01L21/205

Abstract: PURPOSE:To effectively control the growing conditions of a film by providing monitor means for monitoring the growing conditions of the film and means for controlling the growing conditions by feeding back obtained information to film growing condition control system to facilitate the growing velocity and/or the composition of the film. CONSTITUTION:A photomultiplier 16 is connected with a lock-in amplifier 17, the amplifier 17 is connected with a chopper 10, an only an output signal of a laser light 4 selected by the chopper 10 is fed to a recorder 18 to record the timing change of a reflected light intensity by a thin film 2. After a part of a laser light 4 emitted from an He-Ne laser light source 9 is reflected on the flat surface of a lens 11, it is incident to and amplified by a power meter 20, fed to a recorder 22 to record the timing change of the reflected light intensity on a chart. Accordingly, the intensity recorded in the recorder 18 is divided by the intensity recorded in the recorder 22 to accurately measure the timing change of the intensity of the reflected light by the film 2 even if the output of the light source 9 is varied.

公开(公告)号：JPS62189722A

公开(公告)日：1987-08-19

申请号：JP3110086

申请日：1986-02-15

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IMANAGA TOSHIHARU ,  HASE ICHIRO ,  KANEKO KUNIO ,  WATABE SHOZO

IPC: H01L21/205

Abstract: PURPOSE:To effectively control the growing conditions of a film by introducing a light incident from a direction substantially perpendicular to the surface of the film, and controlling the growing conditions of the film on the basis of the intensity of a reflected light and the variation in the time, thereby facilitating the growing velocity and/or the composition of the film. CONSTITUTION:When a thin film 2 of thickness (d) is laminated on a substrate 1 and the (d) is increased by perpendicularly introducing light, i.e., the vibration of the intensity of the reflected light by growing is observed, the composition of the film 2 can be obtained. When the composition is identified, a refractive index (n) can be obtained. Accordingly, the thickness of the film to the first valley of the reflecting intensity can be obtained by using the refractive index (n) and the growing velocity of the film can be decided by dividing the thickness by the growing time. When it is different from a desired value or the value is desirably altered, the data are fed back to an MFC (Mass flow controller) of a MOCVD apparatus to readjust the growing gas density.

公开(公告)号：JPH10294452A

公开(公告)日：1998-11-04

申请号：JP10460997

申请日：1997-04-22

Applicant: SONY CORP

Inventor： IMANAGA TOSHIHARU ,  KAWAI HIROHARU

IPC: H01L29/812 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a heterojunction field effect transistor in which the intrinsic performance of an element using a GaN semiconductor is displayed by optimizing a structure, to realize high performance. SOLUTION: An Alx Ga1-x N (1>=x>=0) layer 1 acting as a base layer, an Aly Ga1-y N (1>=y>0) layer 2 acting as a barrier layer, an n-type Alz Ga1-z N (1>=z>=0) layer 3 acting as an electron supply layer, an undoped Ga1-u Inu N (1>=u>=0) layer 5 acting as an electron transit layer and an Alv Ga1-v N (1>=v>0) layer 8 acting as a gate insulation film are laminated in this order. A gate electrode 9 is provided on the Alv Ga1-v N layer 8, and further a source electrode 10 and a drain electrode 11 are provided on the undoped Ga1-u Inu N layer 5. In this way a GaN FET(field effect transistor) containing both of a MIS(metal insulator semiconductor) structure and a HEMT(high electron mobility transistor) structure is constituted.

公开(公告)号：JPH1049514A

公开(公告)日：1998-02-20

申请号：JP20442596

申请日：1996-08-02

Applicant: SONY CORP

Inventor： IMANAGA TOSHIHARU

IPC: G06F17/00 ,  G06F19/00

Abstract: PROBLEM TO BE SOLVED: To provide correct probability distribution of free flight time and to execute accurate simulation. SOLUTION: First free flight time is calculated based on the 1st scattering rate of grains and a random number and a maximum scattering rate at the time is found out (S1 to S4), and when the rate is less than the 1st scattering rate, the 1st free flight time is adopted (S5, S6). In the other case, an (n+1)th scattering rate obtained by multiplying an n-th scattering rate by (m) and (n+1)th free flight time is calculated (S7, 58). When the maximum value of an wave number at the time is less than the (n+1)th scattering rate, '1' is added to 'n' and the calculation of the (n+1)th scattering rate and the (n+1)th free flight time is repeated (S10, S12, S8, S9), and when the maximum value of the wave number becomes larger than the (n+1)th scattering rate, the (n+1)th free flight time is adopted.

公开(公告)号：JPH09266300A

公开(公告)日：1997-10-07

申请号：JP7555896

申请日：1996-03-29

Applicant: SONY CORP

Inventor： IMANAGA TOSHIHARU

IPC: H01L21/66 ,  G06F17/00 ,  G06F19/00 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/336 ,  H01L29/00 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To increase the simulation efficiency by numerically stabilizing the simulation step time Δt even if it is set up rather longer. SOLUTION: Firstly, the impurity profile of a device is inputted, (step 1) then the simulation step time Δt is inputted (step 2). Next, the field distribution in the other time point after the lapse of Δt according to the field distribution, etc., in one time point is estimated so as to compute the field distribution by weighted addition of the field distribution in one time point and the other time point. (step 5) for computing the movement of carrier in the device according to the computed field distribution (step 6) to repeat the computation of the field distribution until the movement of this carrier reaches the constant state (step 7) so as to compute the physical quantity according to the carrier state in this constant state.

公开(公告)号：JP2000294768A

公开(公告)日：2000-10-20

申请号：JP9475599

申请日：1999-04-01

Applicant: SONY CORP

Inventor： IMANAGA TOSHIHARU ,  HARA MASATERU ,  NAKAMURA FUMIHIKO ,  KAWAI HIROHARU

IPC: H01L29/78 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor element such as an FET which is capable of suppressing leakage current passing through an insulating film. SOLUTION: An n-type AlGaN electron supplying layer 14 and an n-type GaN electron travelling layer 15 are sequentially formed on a sapphire substrate 11 through a buffer layer 12 and a base layer 13 each formed of undoped AlGaN. An AlN gate electrode 17 is formed on the layer 15 through an AlN insulating film 16. The film 16 is grown at a temperature equal to or lower than 900 deg.C, and composed of a plurality of columnar crystal grains. The largest depth of the gaps between the columnar crystal grains on a surface of the film 16 which is on the side of the gate 17 is equal to or smaller than 80% of the thickness of the film 16, and their average depth is equal to or smaller than 35% of the film thickness. The average diameter of the columnar crystal grains is equal to or smaller than 40 nm. As a result, the occurrence of leak currents can be suppressed.

公开(公告)号：JPH0574808A

公开(公告)日：1993-03-26

申请号：JP22476891

申请日：1991-08-09

Applicant: SONY CORP

Inventor： IMANAGA TOSHIHARU ,  HAYAFUJI TAKANORI

IPC: H01L21/66 ,  G06F17/50 ,  H01L21/336 ,  H01L29/00 ,  H01L29/78 ,  H01L29/80

Abstract: PURPOSE:To include a quantum effect and a hot carrier effect simultaneously in carrier transport in a MOS inversion layer, and to enable more accurate simulation in an extremely short computation time. CONSTITUTION:In the simulation of a MOS device through a Monte Carlo method, specified threshold energy Eth is set to the energy of carriers, the energy E of carriers is compared with the threshold energy Eth (steps S41, S61), a gas is treated as a two-dimensional gas when E Eth holds (steps S43, S63).

公开(公告)号：JP2005159148A

公开(公告)日：2005-06-16

申请号：JP2003397837

申请日：2003-11-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIURA KAORU ,  IWAZAWA MISAKO ,  IMANAGA TOSHIHARU ,  AMI TAKAAKI

IPC: H01F10/193 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor material as ferromagnetic at a room temperature, and a so-called nonvolatile semiconductor device using it whose read/write velocity is rapid and memory does not disappear even if an electric supply is turned off.
SOLUTION: A dilute magnetic semiconductor material is used as a magnetosensitive layer of an MRAM, and its composition formula is expressed by (Ga
1-y In
y )
1-x M
x As (wherein M expresses at least one element of an element group consisting of transit metal and rare earth), and values of x, y are in the range of 0.1≤x≤0.3, 0

Abstract translation: 要解决的问题：为了提供在室温下为铁磁性的半导体材料，以及使用其读/写速度快的所谓的非易失性半导体器件，即使电源关闭，存储器也不消失 。 解决方案：稀释磁性半导体材料用作MRAM的磁敏层，其组成式由（Ga 1-y In y ）表示， SB（1）其中M表示由过渡金属和稀土组成的元素组中的至少一种元素，x，y的值在 为0.1≤x≤0.3,0