METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

    公开(公告)号:JP2001244546A

    公开(公告)日:2001-09-07

    申请号:JP2000102864

    申请日:2000-02-29

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor light emitting device having a plurality of semiconductor light emitting elements which makes it possible to form current constriction structures in a simple and optimized condition. SOLUTION: On a substrate, a first laminate ST1 composed of at least a first conductive first clad layer, a first active layer and a second conductive second clad layer is formed by laminating in a semiconductor light emitting element forming region, and a second laminate ST2 composed of at least a first conductive third clad layer, a second active layer and a second conductive fourth clad layer is formed by laminating in a second semiconductor light emitting element forming region. Next, a first protective film MS1 and a second protective film MS2 for protecting current injection regions are formed in layers above the first laminate and the second laminate, respectively. Next, in the second laminate a current constriction structure (RD2) is formed protecting the first laminate. Next, in the first laminate a current constriction structure (41a) is formed protecting the second laminate.

    SEMICONDUCTOR LASER
    3.
    发明专利

    公开(公告)号:JPS62104093A

    公开(公告)日:1987-05-14

    申请号:JP24306785

    申请日:1985-10-30

    Applicant: SONY CORP

    Abstract: PURPOSE:To prevent an interference from occurring due to a returning light by forming the active layer of an end face protecting film in thickness for reducing the absorption of a laser beam, and forming it in thickness to satisfy the non-reflection condition of the part covered on returning light incident unit. CONSTITUTION:A semiconductor chip 11 for forming a semiconductor laser 10 is chip-bonded to a heat sink 15 by a p-type side electrode 14 formed on the surface. The thicknesses of end face protecting films 16, 16 made of SiN formed on the light emitting end face 10a and the opposite side end face ae reduced from the front surface side toward the back surface side. The thickness Ta of the portion to cover an active layer 12 is the value for satisfying the condition that the absorption is least, and the thickness Tb of the portion for covering the returning light incident portion 17 is set to the value for satisfying the non-reflecting condition, and the thickness Tb is approx. 1/2 of the thickness Ta. Accordingly, the reflection at the end face 10a can be prevented to eliminate the error in the detection of a tracking error.

    Data reproducing apparatus and data recording apparatus
    4.
    发明专利
    Data reproducing apparatus and data recording apparatus 审中-公开
    数据再现装置和数据记录装置

    公开(公告)号:JP2003067960A

    公开(公告)日:2003-03-07

    申请号:JP2002180962

    申请日:2002-06-21

    Abstract: PROBLEM TO BE SOLVED: To facilitate the adjustment of the optical axes of laser beams emitted from a plurality of light emitting parts and a rear stage optical system. SOLUTION: In a semiconductor laser 1 having the plurality of light emitting parts, with respect to the optical axis of one light emitting part, the axes of the other light emitting parts have a tilt angle. The data reproducing apparatus or the data recording apparatus uses such a semiconductor laser 1. Further, the data reproducing apparatus or the data recording apparatus includes an adjustable optical system from the optical axis of at least one light emitting part to the optical axes of the other light emitting parts.

    Abstract translation: 要解决的问题:为了便于调整从多个发光部件和后级光学系统发射的激光束的光轴。 解决方案:在具有多个发光部的半导体激光器1中,相对于一个发光部的光轴,其他发光部的轴具有倾斜角。 数据再现装置或数据记录装置使用这种半导体激光器1.此外,数据再现装置或数据记录装置包括从至少一个发光部分的光轴到另一个的光轴的可调光学系统 发光部件。

    SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURING METHOD, AND MULTI-BEAM SEMICONDUCTOR LASER DEVICE

    公开(公告)号:JP2002324944A

    公开(公告)日:2002-11-08

    申请号:JP2001126045

    申请日:2001-04-24

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element which has no variance of polarization angle rotation even when mounted on a heat sink, etc., by a junction down joining system and does not generate a crack damaging an active layer even when cleaved. SOLUTION: This semiconductor laser element 40 has a laser resonator structure 21 formed on striped mesa ridge 12 as a triangularly sectioned striped laminate structure including the top surface of the ridge as its base and a buried laminate structure wherein the ridge and the laser resonator structure 21 on the ridge are buried on a GaAs ridge substrate 14 which has on a substrate the striped mesa ridge 12 having a top surface in parallel to the substrate surface. The top surface of a p-side electrode 34 on the burying laminate structure is composed of a center cylindrical surface part 44 formed in stripes on the laser resonator structure, low cylindrical surface parts 46 which are provided on both sides of the center cylindrical surface part and lower than the center cylindrical surface part, and a high side cylindrical surface part 48 which is provided outside on the laser resonator structure along the respective low cylindrical surface parts and higher than the center cylindrical surface part.

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