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    Methods of manufacturing semiconductor devices
    1.
    发明授权
    Methods of manufacturing semiconductor devices 失效

    公开(公告)号：US3575731A

    公开(公告)日：1971-04-20

    申请号：US3575731D

    申请日：1968-02-28

    Applicant: SONY CORP

    Inventor： HOSHI KINJI ,  KUMAZAKI CHIAKI ,  AZUMA YOSHINORI ,  TSUCHIHASHI TOSHITAKA ,  TADOKORO SUSUMU ,  KATO TOSHIRO

    IPC: H01L21/00 ,  H01L21/762 ,  H01L27/00 ,  H01L7/00

    CPC classification number: H01L21/00 ,  H01L21/76297 ,  H01L27/00 ,  Y10S148/085 ,  Y10S148/115

    Abstract: IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, A SEMICONDUCTOR SUBSTRATE HAS A SURFACE THEREOF ETCHED OR OTHERWISE FORMED WITH AT LEAST ONE PROFILED PORTION, SUCH AS, A PROJECTION OR RECESS, HAVING A FACE OFFSET FROM THE SURROUNDING AREAS OF THAT SURFACE AND SIDES EXTENDING FROM THE FACE TO THE ADJACENT SURFACE AREAS, AT LEAST TWO LAYERS OF DIFFERENT CONDUCTIVITY TYPES ARE SEQUENTIALLY DEPOSITED ON THE SUBSTRATE SURFACE BY THE VAPOR GROWTH TECHNIQUE TO COVER AT LEAST THE FACE AND SIDES OF THE PROJECTION OR RECESS, AND EITHER THE SUBSTRATE OR THE OUTERMOST LAYER OF THE RESULTING ELEMENT IS SELECTIVELY REMOVED TO EXPOSE, ADJACENT THE SIDES OF THE PROJECTION OR RECESS,A CROSSSECTION OF AT LEAST THE LAYER WHICH IS CLOSEST THERETO. IN ORDER TO FACILITATE ATTACHMENT OF AN ELECTRODE TO A LAYER AT THE EXPOSED CROSS-SECTION BY INCREASING THE WIDTH OF THE LATTER, THE PLANE TO WHICH MATERIAL IS REMOVED MAY BE DIRECTED OBLIQUELY TO THE SIDES OF THE PROJECTION OR RECESS, AS BY INCLINING THE SIDES, OR THE POSITION OF THE PROJECTION OR RECESS MAY BE SELECTED SO THAT ITS FACE AND SIDES RESPECTIVELY CORRESPOND TO CRYSTAL FACES OF RELATIVELY SMALL AND LARGE CRYSTAL GROWTH SPEEDS. THE EFFECTIVE WIDTH OF A LAYER AT ITS EXPOSED CROSS-SECTION MAY ALSO BE INCREASED BY ALLOYING A PART OF AN ADJACENT LAYER OR THE ADJACENT REGION OF THE SUBSTRATE SO AS TO HAVE THE SAME TYPE CONDUCTIVITY, OR BY APPLYING A LAYER OF THE SAME CONDUCTIVITY TO THE ADJACENT LAYER OR SUBSTRATE ONLY AT THE SIDES OF THE PROJECTION OR RECESS BY EITHER THE DIFFUSION OR VAPOR GROWTH PROCESS.

    2.
    发明专利
    未知

    公开(公告)号：DE1639418A1

    公开(公告)日：1971-02-04

    申请号：DE1639418

    申请日：1968-02-29

    Applicant: SONY CORP

    Inventor： HOSHI KINJI ,  KUMAZAKI CHIAKI ,  AZUMA YOSHINORI ,  TADOKORO SUSUMU ,  TSUCHIHASHI TOSHITAKA ,  KATO TOSHIRO

    IPC: H01L21/00 ,  H01L21/762 ,  H01L27/00 ,  H01L7/00

    Abstract: 1,224,803. Semi-conductor devices. SONY CORP. 26 Feb., 1968 [1 March, 1967 (5)], No. 40776/70. Divided out of 1,224,801. Heading HlK. The subject-matter of this Specification is entirely contained in Specification 1,224,801 but the claims relate to a semi-conductor device comprising a support having a recess in a surface thereof with two sequentially vapour grown semi-conductor layers in said recess lying parallel to its sides and bottom, with semiconductor material filling the portion of the recess surrounded by the layers. The effective width of at least one of the layers at its exposed cross-section at the support surface is greater than the thickness of the bottom portion of that layer in order to facilitate attachment of an electrode thereto.

    METHOD FOR SUPPORTING DECISION OF STAFF ARRANGEMENT
    4.
    发明专利
    METHOD FOR SUPPORTING DECISION OF STAFF ARRANGEMENT 失效

    公开(公告)号：JPH07296062A

    公开(公告)日：1995-11-10

    申请号：JP10769394

    申请日：1994-04-22

    Applicant: SONY CORP

    Inventor： INAMURA AKIO ,  OSHIRO KENICHIRO ,  KATO TOSHIRO

    IPC: G05B15/02 ,  B65G61/00 ,  G05B19/418 ,  G06Q10/00 ,  G06Q10/06 ,  G06Q50/00 ,  G06Q50/04 ,  G06F17/60

    Abstract: PURPOSE:To provide a method for supporting the decision of staff arrangement, which can easily decide the arrangement of staffs within a working section. CONSTITUTION:First, an analyzer 1 executes data input 1a, data base storage 2a and transfer-processing 2b to a high-order device 3 outside of the working section concerning the working situation of the staffs by a terminal equipment 2 on the side of the working section. Next, after the generation 3a of a simulation model from this piece of data by the high-order device 3 and the execution of simulation 3b, the result of simulation is displayed 2c to the terminal equipment 2. Then, the analyzer 1 refers to this so as to decide the arrangement of the staffs. Besides, a flag showing whether the work of the staffs is directly related or not to production is added to the data base in advance so as to execute loss analysis lb with regard to the work of the staffs in the method for supporting the decision of staff arrangement.

    Apparatus for treating silane gas
    5.
    发明专利
    Apparatus for treating silane gas 失效
    用于处理硅烷气体的装置

    公开(公告)号：JPS6142321A

    公开(公告)日：1986-02-28

    申请号：JP16473884

    申请日：1984-08-06

    Applicant: Nippon Metsushiyu Eng Kk ,  Sony Corp

    Inventor： NOGUCHI FUJIO ,  KATO TOSHIRO ,  NAGAI KOJI ,  MOTOHORI ISAO ,  UEDA YOSHIHIRO

    IPC: B01D53/46 ,  B01D53/18 ,  B01D53/34 ,  B01D53/68 ,  B01D53/77

    Abstract: PURPOSE: To provide a safe low cost silane gas treatment apparatus, by providing a blade wheel formed by radially fixing blades to the outer periphery of a cylindrical filter, a temp. detection apparatus and a pressure detection apparatus in a casing.
    CONSTITUTION: The silane exhaust gas from a semiconductor manufacturing process is guided into the cylindrical filter 12 of a blade wheel 11 from the gas introducing hole 17 provided to the side plate 16 in a casing 3 through a gas introducing pipe 25. The blade wheel 11 is rotated at a high speed by a motor 21, and washing water and air are radially flowed out from a washing water introducing pipe 31 and an air introducing pipe 37. The silane gas is reacted with washing water and diluted with air while the diluted gas is flowed out from the blade wheel through the cylindrical filter 12 to be exhausted from an exhaust port 6 through a double filter 7. When the combustion of the silane gas in the casing 3, the clogging of the cylindrical filter 12 and the lowering in the supply amount of washing water are generated, an alarm 41 is operated by the signals from a thermometer 9, a differential pressure gauge 28 and a flowmeter 34.
    COPYRIGHT: (C)1986,JPO&Japio

    Abstract translation: 目的：为了提供一种安全的低成本硅烷气体处理装置，通过提供通过将圆柱形过滤器的外周径向固定叶片形成的叶轮， 检测装置和壳体内的压力检测装置。 构成：来自半导体制造工序的硅烷废气通过气体导入管25从设置在壳体3内的侧板16的气体导入孔17引导到叶轮11的筒状过滤器12中。叶轮11 通过电动机21高速旋转，并且洗涤水和空气从洗涤水引入管31和空气引入管37径向流出。硅烷气与洗涤水反应并用空气稀释，同时稀释气体 从叶轮通过圆筒形过滤器12流出，从排气口6通过双过滤器7排出。当壳体3中的硅烷气体燃烧时，筒状过滤器12的堵塞和 产生洗涤水的供给量，通过来自温度计9，差压计28和流量计34的信号来操作报警器41。

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    6.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS62150723A

    公开(公告)日：1987-07-04

    申请号：JP29127485

    申请日：1985-12-24

    Applicant: SONY CORP

    Inventor： NOWATARI MITSUGI ,  KATO TOSHIRO

    IPC: H01L21/302 ,  H01L21/3065

    Abstract: PURPOSE:To remove fine protrusions and obtain a semiconductor device of high reliability, by disclosing the protrusions alone using a specified photo-resist, and eliminating the disclosed protrusions alone by etching. CONSTITUTION:A photo-resist 3 is spread on a whole surface by an ordinary spin-coating. The film thickness of the photo-resist 3 after spreading is controlled to be about 0.8-1.0mum. The photo-resist 3 is exposed through a glass photographic plate 4, and then developed to disclose protrusions alone. As to the disclosure of protrusions, the whole part of a protrusion is not always necessary but a domain required to etch is enough. The disclosed protrusions are eliminated by etching, and the photo-resist 3 remaining in the other region than the protrusions 2 serves as a mask. After eliminating the protrusions 2 the photo- resist 3 is torn off. The fine protrusions can be easily eliminated, thereby.

    PRODUCTION MANAGEMENT METHOD
    8.
    发明专利
    PRODUCTION MANAGEMENT METHOD 失效

    公开(公告)号：JPH07282148A

    公开(公告)日：1995-10-27

    申请号：JP10082094

    申请日：1994-04-13

    Applicant: SONY CORP

    Inventor： YOSHIDA TAKESHI ,  INAMURA AKIO ,  KATO TOSHIRO

    IPC: B23Q41/08 ,  B65G61/00 ,  G05B15/02 ,  G05B19/418 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/02 ,  G06F17/60

    Abstract: PURPOSE:To provide a production management method capable of shortening the manufacture lead time and maintaining the maximum throughput. CONSTITUTION:A reference processing amount, a management limit value, a process restoration margin and a reference completed amount are set for respective processes beforehand and a real processing amount A and the management limit value B are compared every time when a prescribed time elapses (a step 1b). When the process for which the real processing amount A exceeds the management limit value B in the comparison is present, the message for warning is displayed at respective work instruction devices (the steps 1d and 1d') and further, when a completed amount result summed-up total D in the process is less than a reference completed amount summed-up total C, the processing amount is increased by using the process restoration margin. Also, when the completed amount result summed-up total D is more than the reference completed amount summed-up total C, informing for limiting the processing amount of a previous process is performed.

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