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公开(公告)号：JPH05289135A
公开(公告)日：1993-11-05
申请号：JP9119992
申请日：1992-04-10
Applicant: SONY CORP
Inventor： KOGA YUJI , YAMADA MASAHIRO
Abstract: PURPOSE:To stabilize an optical output of the second harmonic and to enable modulating light intensity of the second harmonic by an electro-optical effect by making a periodic pattern of the first electrode at least same as that of a period polarization reversal structure. CONSTITUTION:The first and the second electrodes 11 and 12 are formed, at least either of them, for instance, the first electrode 11 is arranged so as to coincide with a pattern of a period polarization reversal structure 3. Hereby, an electrooptical effect can be caused in a light waveguide path 2 corresponding to the period polarization reversal structure 3 by applying the prescribed modulating voltage between the first and the second electrodes 11 and 12. Therefore, matching between the polarization reversal period and the fundamental wavelength can not only be possible, but also light intensity modulation can be provided to the second harmonics of its output light by deviating the polarization reversal period from the wavelength of the fundamental wave by the same optical effect.
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公开(公告)号：JPH06314836A
公开(公告)日：1994-11-08
申请号：JP12786893
申请日：1993-04-30
Applicant: SONY CORP
Inventor： OGAWA TAKESHI , KOGA YUJI , KIJIMA KOUICHIROU , TAGUCHI AYUMI
Abstract: PURPOSE:To reduce retrogressive light from an outgoing end face or the like of a non-linear optical element facing a semiconductor laser while making the semiconductor laser always stably oscillate a fundamental wave laser light. CONSTITUTION:A semiconductor laser 1 and a non-linear type optical element 2 are butt-coupled so that the outgoing end face of the semiconductor laser and the incident end face of the non-linear type optical element may be adjacent. The non-linear type optical element performs wavelength conversion of a foundation wave laser light from the semiconductor laser 1. An electrode 3 is attached to this non-linear type optical element 2. An oscillator impresses an oscillation electric field of 100Hz to 10MHz on the non-linear type optical element through the electrode 3 so that a refractive index of the non-linear type optical element can be changed.
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公开(公告)号：JPH05289134A
公开(公告)日：1993-11-05
申请号：JP9119892
申请日：1992-04-10
Applicant: SONY CORP
Inventor： WATANABE KENJIRO , YAMADA MASAHIRO , NADA NAOJI , MATSUMOTO SHUICHI , KOGA YUJI , KIJIMA KOUICHIROU
Abstract: PURPOSE:To obtain a non-linear optical device which has high efficiency and superior output characteristics efficiently in manufacturing and with high yield by forming periodic domain structure in a ferroelectric substance. CONSTITUTION:Periodic domain structure adapted to a wavelength of a fundamental wave light source 5 is formed in a state in which the light source 5 is optically coupled to a ferroelectric substance 1 having a light waveguide path. Therefore, since period domain structure having an optimum period can be formed independently of dispersion of oscillation wavelength of the light source 5 for instance a semiconductor laser, a nonlinear optical device which has high conversion efficiency and superior output characteristics for instance short wavelength light source can be constituted. And after the light waveguide path 2 is formed, periodic domain structure is formed, but the light waveguide path 2 previously formed can be formed so as not to be affected any by adopting a method in which reversal of domain can be performed at a low temperature in forming this periodic domain structure.
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公开(公告)号：JPH06326392A
公开(公告)日：1994-11-25
申请号：JP16661493
申请日：1993-07-06
Applicant: SONY CORP
Inventor： KIJIMA KOUICHIROU , KOGA YUJI , TAGUCHI AYUMI , OGAWA TAKESHI
Abstract: PURPOSE:To make it possible to avoid the generation of the hysteresis phenomenon of the oscillation wavelength of a laser beam, which is emitted from a semiconductor laser, to the injection current of the laser by a method wherein a high-frequency current having an amplitude of a prescribed magnitude is made to superpose on the injection current so as to avoid the generation of hte hysteresis phenomenon to the injection current of the laser and is fed to the semiconductor laser. CONSTITUTION:The sum of 100Hz to 100MHz, desirably several tens kHz, of a low-frequency signal, which is generated from a local oscillator 7, and a signal, which is given from a current controlling circuit 9, is converted into a current by a current source 8. An injection current, which is outputted from the source 8, is superposed with 750MHz, for example, of a current by a high-frequency superposing circuit 10 and is fed to a semiconductor laser element 1. Thereby, a high-frequency current having an amplitude of a prescribed magnitude is made to superpose on the injection current of the laser so as to avoid the generation of the hysteresis phenomenon of an oscillation wavelength of a laser beam, which is emitted from the laser, and is made to flow in such a way as to feed to the laser. As a result, the generation of the hysteresis phenomenon of the oscillation wavelength of the laser beam can be avoided.
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公开(公告)号：JPH06214265A
公开(公告)日：1994-08-05
申请号：JP606893
申请日：1993-01-18
Applicant: SONY CORP
Inventor： OGAWA TAKESHI , TAGUCHI AYUMI , KIJIMA KOUICHIROU , KOGA YUJI
Abstract: PURPOSE:To make the oscillation wavelength of a semiconductor laser to coincide with the wavelength to maximize the conversion efficiency of a nonlinear optical element. CONSTITUTION:This wavelength conversion device is constituted by using a light source 19 consisting of at least the semiconductor laser 1 and a diffraction grating 2 and the nonlinear optical element 3 and has a modulating element for applying a slight fluctuation to the oscillation wavelength of the semiconductor laser 1 and a photodetector 6 for receiving the exit light from the nonlinear optical element 3. A correlation between the fluctuation signal obtd. from this photodetector 6 and the fluctuation signal of the modulating element is obtd. and a difference between the wavelength of the fundamental wave at which the wavelength conversion efficiency of the nonlinear optical element 3 and the wavelength of the input fundamental wave to the nonlinear optical element 3 obtd. by this correction is obtd. as an error signal, by which the wavelength of the input fundamental wave is made to coincide with the wavelength of the fundamental wave to maximize the wavelength conversion efficiency.
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Patent Agency Ranking
公开(公告)号：JPH0862650A
公开(公告)日：1996-03-08
申请号：JP19867694
申请日：1994-08-23
Applicant: SONY CORP
Inventor： KOGA YUJI
Abstract: PURPOSE: To simplify the production process of a second harmonic generating element by integrating a Bragg diffraction grating having a periodical structure in the depth direction of an optical waveguide in a nonlinear optical substrate by one proton exchanging method. CONSTITUTION: This second harmonic generating element is produced by forming an optical waveguide 3 having a periodical structure where laser light is made incident on the upper surface of a substrate 4 having a nonlinear optical effect. The production processes of this element consist of a process to pattern the optical waveguide 3 having a periodical structure, a process to form a mask material on the optical waveguide pattern after the waveguide 3 is patterned, a process to pattern the mask material to have the period of a Bragg diffraction grating along the propagation direction of light corresponding to the wavelength of fundamental waves in the second harmonic wave generating area, and a process to etch the mask material with a soln. which exchanges proton in the exchanging process of proton.
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公开(公告)号：JPH0862651A
公开(公告)日：1996-03-08
申请号：JP19867794
申请日：1994-08-23
Applicant: SONY CORP
Inventor： KOGA YUJI
Abstract: PURPOSE: To generate stable SHG light even when a semiconductor laser deteriorates after phase matching of fundamental waves and the SHG element is obtd., by forming a second harmonic generating part on an optical waveguide and forming a clad layer on the substrate in such a manner that a part of whole of the clad layer has a periodical structure to change the refractive index in a desired period. CONSTITUTION: The second harmonic generating (SHG) element 100 has an integrated structure of an optical waveguide 3 where fundamental light from a semiconductor laser enters, areas 1, 2 having first and second polarizing directions, respectively, and a clad layer 5 having a periodical structure which changes the refractive index in a desired period formed on the optical waveguide 3 in a ferroelectric material. Among the fundamental waves from the semiconductor laser, only the light of the Bragg wavelength determined by the periodical structure having a desired period formed in a part or whole of the clad layer 5 leaks into the clad layer 5 so that the light is selectively reflected by the reflectance according to the order number of the diffraction grating and returned to the semiconductor laser 7. Thus, the oscillation wavelength of the semiconductor laser is fixed to the Bragg wavelength.
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公开(公告)号：JPH0862649A
公开(公告)日：1996-03-08
申请号：JP19867594
申请日：1994-08-23
Applicant: SONY CORP
Inventor： KOGA YUJI
Abstract: PURPOSE: To obtain stable fundamental wave light against the deterioration of a semiconductor laser or environmental changes and to obtain phase matching between the fundamental wave light and the second harmonic generating (SHG) element. CONSTITUTION: This element consists of a substrate comprising a ferroelectric material, an optical waveguide 3 where the laser light enters in the substrate, a periodical structure, and first and second electrodes 5, 6 formed on both surfaces of the substrate. The periodical structure is formed in the area including the optical waveguide 3 in such a manner that an area 1 having a first polarization direction and an area 2 having a second polarizing direction opposite to the first polarizing direction are alternately arranged in a desired period. When voltage is applied to electrodes 5, 6, difference of refractive index is produced in the periodical structure to generate a Bragg diffraction grating, which fixes the wavelength of the semiconductor laser light.
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公开(公告)号：JPH06326411A
公开(公告)日：1994-11-25
申请号：JP11467093
申请日：1993-05-17
Applicant: SONY CORP
Inventor： KIJIMA KOUICHIROU , KOGA YUJI
Abstract: PURPOSE:To easily but firmly fix each member while a high alignment accuracy is being maintained between each member. CONSTITUTION:A semiconductor laser chip 1 is attached to a fixed substrate 11 through the intermediary of a heat sink 3, and an LN-X wavelength conversion element 6 is attached through an orthogonal member 20. At this time, liquid metal 60, which is mainly composed of gallium and indium, is coated between the fixed substrate 11 and the member 20 and also between the LN-X wavelength conversion element 6 and the member 20, they are left alone in that state for five minutes to several hours, and they are allowed to show an alloying reaction. As a result, each member can be fixed.
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公开(公告)号：JPH06164066A
公开(公告)日：1994-06-10
申请号：JP30733092
申请日：1992-11-17
Applicant: SONY CORP
Inventor： KIJIMA KOUICHIROU , KOGA YUJI , TAGUCHI AYUMI , OGAWA TAKESHI
Abstract: PURPOSE:To stably guide a fundamental-wave laser beam to an optical waveguide in an optical-waveguide element by a method wherein, in a state that the optical waveguide in the optical-waveguide element has been brought close to the edge of a semiconductor laser device, the main face of the optical- waveguide element is arranged and fixed perpendicularly to the main face of a substrate. CONSTITUTION:In a state that a proton-exchange optical waveguide 4 has been brought close to the edge of a semiconductor laser chip 1, the main face 21 of an LN-X wavelength conversion element 6 is arranged perpendicularly to the main face 22 of a fixed substrate 11. Concretely, a member 20 which is composed of Cu, a ceramic or the like and which is provided with a right angle is installed so as to come into contact with the LN-X wavelength conversion element 6 and with the fixed substrate 11, and it is arranged on, and fixed to, the fixed substrate 11 in a state that the LN-X wavelength conversion element 6 has been attached to the member 20. Thereby, it is possible to stably guide a laser beam from the semiconductor laser device 1 to the optical waveguide 4.
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