公开(公告)号：DE69522888T2

公开(公告)日：2002-04-11

申请号：DE69522888

申请日：1995-10-12

Applicant: SONY CORP

Inventor： TOMIYA SHIGETAKA ,  NAKANO KAZUSHI ,  ITO SATOSHI ,  MINATOYA RIKAKO

IPC: C30B25/14 ,  C30B23/02 ,  H01L21/203 ,  H01L21/363 ,  H01L21/365 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01L33/00

Abstract: An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5

公开(公告)号：DE69522888D1

公开(公告)日：2001-10-31

申请号：DE69522888

申请日：1995-10-12

Applicant: SONY CORP

Inventor： TOMIYA SHIGETAKA ,  NAKANO KAZUSHI ,  ITO SATOSHI ,  MINATOYA RIKAKO

IPC: C30B25/14 ,  C30B23/02 ,  H01L21/203 ,  H01L21/363 ,  H01L21/365 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01L33/00

Abstract: An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5

公开(公告)号：SG33549A1

公开(公告)日：1996-10-18

申请号：SG1995001569

申请日：1995-10-16

Applicant: SONY CORP

Inventor： TOMIYA SHIGETAKA ,  NAKANO KAZUSHI ,  ITO SATOSHI ,  MINATOYA RIKAKO

IPC: H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01S3/19

公开(公告)号：JPH07273054A

公开(公告)日：1995-10-20

申请号：JP31751494

申请日：1994-11-28

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  ITO SATORU ,  MATSUMOTO OSAMU ,  SHIRAISHI SEIJI ,  MINATOYA RIKAKO ,  HIEI FUTOSHI

IPC: H01L21/205 ,  H01L21/203 ,  H01L21/363 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To allow growth of a p-type II-VI compound having sufficiently high carrier concentration or a II-VI compound semiconductor having low defect density and excellent crystallization. CONSTITUTION:At the time of vapor growth of a p-type II-VI compound semiconductor on a semiconductor substrate such as a GaAs substrate by a molecular beam epitaxial method, a semiconductor substrate 1 having a main surface being off by a small angle from a (100) surface in the direction by a small angle, and a main surface being off in the (011) direction by a small angle or a main surface being off in the (01-1) direction by a small angle further a main surface being off in the (011) direction by a small angle is used. In order to make a II-VI compound semiconductor of low defect density to grow, especially the semiconductor substrate 1 having a main surface being off from the (100) in the (01-1) direction by a small angle is used.

公开(公告)号：JPH08115877A

公开(公告)日：1996-05-07

申请号：JP25080194

申请日：1994-10-17

Applicant: SONY CORP

Inventor： TOMITANI SHIGETAKA ,  NAKANO KAZUSHI ,  ITO SATORU ,  MINATOYA RIKAKO

IPC: C30B25/14 ,  C30B23/02 ,  H01L21/203 ,  H01L21/363 ,  H01L21/365 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01S3/18

Abstract: PURPOSE: To surely prevent a II-VI compound semiconductor from becoming uneven during epitaxial growth by selecting the feed ratio of the group VI element to the group II element. CONSTITUTION: The molecular beam epitaxy method or metal organic chemical vapor deposition method is applied to successively epitaxially grow a buffer layer 2, first clad layer 3 of Cl doped ZnMgSSe, first guide layer 4, active layer 5 of ZnCdSe, second guide layer 6, second clad layer 7 of N-doped ZnMbSSe, cap layer 8, quantum well structure 9 and contact layer 10 on a wafer at its temp. of 250-300 deg.C. In particular, as for the epitaxy of the layers 3, 4, 5, 6 and 7, the feed ratio of the group VI element to the group II element from their respective molecular beam sources to the substrate 1 is set to 1.3:1-2.5:1.

公开(公告)号：JPH04348205A

公开(公告)日：1992-12-03

申请号：JP14936891

申请日：1991-05-25

Applicant: SONY CORP

Inventor： MINATOYA RIKAKO ,  AZUMA KENICHI

IPC: G01B7/34 ,  G01N37/00 ,  G01Q30/20 ,  G01Q60/10 ,  H01J37/28

Abstract: PURPOSE:To mount a sample in a good manner on a sample stage. CONSTITUTION:A sample 4 is fixed on a magnetic bed 5 and the magnetic bed 5 is attracted magnetically to a magnetic sample stage 6. Accordingly, the sample 4 is mounted on a sample mount 1. Since the sample is fixed to the sample stage 6, the surface of the sample is not broken, and the sample is prevented from vibrating during the measurement. Even a very small sample can be mounted on the stage.