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公开(公告)号:DE60230486D1
公开(公告)日:2009-02-05
申请号:DE60230486
申请日:2002-02-20
Applicant: SONY CORP
Inventor: OOHATA TOYOHARU , NAKAJIMA HIDEHARU , YANAGISAWA YOSHIYUKI , IWAFUCHI TOSHIAKI
IPC: H01L27/15 , H01L21/312 , H01L25/075 , H01L33/06 , H01L33/10 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/54 , H01L33/56
Abstract: An inexpensive display unit having a sufficient luminance and a method of fabricating the display unit are disposed, wherein micro-sized semiconductor light emitting devices are fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices (11) formed by selective growth are each buried in a first insulating layer (21) made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes (18) and (19) of each of the light emitting devices (11) are extracted. These light emitting devices (11) are fixedly arrayed on the upper plane of the base body (31) at intervals. A second insulating layer (34) made from an epoxy resin is formed on the plane of the base body (31) so as to cover the semiconductor light emitting devices (11) each of which has been buried in the first insulating layer (21). The electrodes (18) and (19) are extracted to the upper surface of the second insulating layer (34) via specific connection holes formed in the second insulating layer (34), and the electrode (18) is led to a connection electrode (32) provided on the base body (31) via a connection hole formed in the second insulating layer (34).
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公开(公告)号:EP1367654A4
公开(公告)日:2007-04-18
申请号:EP02700626
申请日:2002-02-20
Applicant: SONY CORP
Inventor: OOHATA TOYOHARU , NAKAJIMA HIDEHARU , YANAGISAWA YOSHIYUKI , IWAFUCHI TOSHIAKI
IPC: H01L27/15 , H01L21/312 , H01L25/075 , H01L33/06 , H01L33/10 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/54 , H01L33/56
CPC classification number: H01L33/24 , H01L25/0753 , H01L27/156 , H01L2924/0002 , H01L2924/00
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公开(公告)号:JP2004228302A
公开(公告)日:2004-08-12
申请号:JP2003013596
申请日:2003-01-22
Inventor: NAKAJIMA HIDEHARU
IPC: H05K3/46
Abstract: PROBLEM TO BE SOLVED: To make considerably easily manufacturable an arbitrary wiring board with a high productivity, at a low cost and with high reliability. SOLUTION: The multilayer wiring board is provided with a single wiring layer formed by using a thin film metal 11, the other wiring layer different from the single wiring layer and an interlayer insulating film which is installed between the single wiring layer and the other wiring layer and is formed of a prescribed insulating material. The multilayer wiring board is formed by integrally forming a via for electrically connecting the single wiring layer and the other wiring layer in forming the single wiring layer formed by using the thin film metal 11. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号:JP2002270898A
公开(公告)日:2002-09-20
申请号:JP2001067238
申请日:2001-03-09
Applicant: SONY CORP
Inventor: OHATA TOYOJI , NAKAJIMA HIDEHARU , YANAGISAWA YOSHIYUKI , IWABUCHI TOSHIAKI
IPC: H01L21/312 , H01L25/075 , H01L27/15 , H01L33/06 , H01L33/10 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/54 , H01L33/56 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a display device, capable of disposing microscopic semiconductor light-emitting elements at an interval on the surface of the base of the device and fixing the elements and having a sufficient luminance at a low cost, and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the display device comprises the steps of disposing selectively grown GaN microscopic semiconductor light- emitting elements 11, embedded in a first insulating layer 21 of an epoxy resin except the upper end part and a lower end surface and drawing electrodes 18, 19 at an interval on the upper surface of a base 31, and then fixing the elements. The method further comprises the steps of then forming a second insulating layer 34 of epoxy resin on the surface of the base 31 to cover together with the first layer 21 the elements 11, perforating required connecting openings, drawing the electrodes 18, 19 to the upper surface of the second insulation layer 34, further, perforating connecting holes at the second layer 34, and guiding the electrode 18 to a connecting electrode 32 provided at the base 31.
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公开(公告)号:JP2002158173A
公开(公告)日:2002-05-31
申请号:JP2001268736
申请日:2001-09-05
Applicant: SONY CORP
Inventor: NAKAJIMA HIDEHARU , NEGORO YOICHI , KAKUI SETSUO
IPC: C23C16/56 , H01L21/20 , H01L21/336 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film, especially a semiconductor thin film, in which volatile gases, e.g. hydrogen, in a thin film can be reduced just like a case employing an electric furnace without sacrifice of productivity while preventing breakage of the film. SOLUTION: A thin film containing volatile gas is irradiated with excimer laser light 5 having pulse width of 60 nS or longer thus degassing the thin film. The thin film can be protected against breakage even if it is recrystallized subsequently and short time processing is realized by excimer laser irradiation. Alternatively, a thin film containing 2 atm.% or more of volatile gas is irradiated with excimer laser having pulse width of 60 nS or longer thus degassing the thin film while crystallizing. Since nuclei are formed uniformly, size of crystal particles is made uniform and variations of characteristics are suppressed.
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公开(公告)号:JPH11216663A
公开(公告)日:1999-08-10
申请号:JP2216498
申请日:1998-02-03
Applicant: SONY CORP
Inventor: NAKAJIMA HIDEHARU
Abstract: PROBLEM TO BE SOLVED: To effectively use the grinding slurry during the grinding which is the original purpose by forming a groove having a projecting part in the direction opposite to the rotational or advancing direction of a grinding pad in an area opposite to the rotational or advancing direction of the grinding pad. SOLUTION: A groove 23 having a projecting part 203 in the direction opposite to the rotational or advancing direction 30 of a grinding pad 2 is provided only on a second area B side, where a first area A is located on the rotational or advancing direction 30 side of the grinding pad 2 of a circle of the radius R, and the second area B is on the side opposite thereto. When the grinding slurry 10 is discharged out of the grinding pad 2 by the centrifugal force or the like as the grinding pad 2 is rotated, the grinding slurry is once received by the groove 23, and the once-received grinding slurry is selectively fed forward in the advancing direction of a wafer 4. The grinding slurry 10 can be effectively sued during the chemical and mechanical grinding, and the use of the grinding slurry 10 can be reduced.
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公开(公告)号:JPH11163138A
公开(公告)日:1999-06-18
申请号:JP34385997
申请日:1997-11-28
Applicant: SONY CORP
Inventor: NAKAJIMA HIDEHARU
IPC: H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/768
Abstract: PROBLEM TO BE SOLVED: To manufacture a high speed operating semiconductor device of high yield in production, even if a plurality of connection holes having different depths are formed simultaneously. SOLUTION: An etching treatment is performed to form a deep connection hole 25 in a state wherein a modification treatment is conducted for decreasing etching speed on the surface of a wiring 23 which is exposed to the bottom part of a shallow connection hole. As a result, even if the wiring 23 exposed to the bottom part of the shallow connection hole 25 is hardly thinned off, the increase in resistance of the wiring 23 can be suppressed. Consequently, since the thickness of the wiring 23 can be set thin from the beginning, an SiO2 film 24 can be embedded in the wiring 23 without the generation of voids.
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公开(公告)号:JPH10225864A
公开(公告)日:1998-08-25
申请号:JP3155197
申请日:1997-02-17
Applicant: SONY CORP
Inventor: NAKAJIMA HIDEHARU
Abstract: PROBLEM TO BE SOLVED: To uniformize a polishing rate in a polishing object surface, and reduce a cost spent on repair-maintenance or the like of a dresser or the like by constituting a polishing pad of a plate-like base material and plural fiber yarn formed of a fiber material, and respectively projecting one ends of the plural fiber yarn from a surface of the plate-like base material. SOLUTION: First of all, a polishing surface plate is rotated by a polishing surface plate rotating shaft, and when polishing slurry is supplied from a supply nozzle on a polishing pad 30 placed and arranged on this polishing surface plate, the polishing slurry stays in a recessed part between fiber yarn 32 whose one ends project from a base material 31 of a surface of the polishing pad 30. A carrier to hold a wafer is brought near to this polishing pad 30, and the wafer and the polishing slurry on the polishing pad 30 are brought into contact with each other. The carrier is swung while pressing a surface of the polishing pad 30 through the wafer by a polishing pressure adjusting mechanism. Therefore, since the wafer slidingly moves on the polishing slurry held in the recessed part of the polishing pad 30, the wafer can be polished.
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公开(公告)号:JPH08293470A
公开(公告)日:1996-11-05
申请号:JP9693295
申请日:1995-04-21
Applicant: SONY CORP
Inventor: NAKAJIMA HIDEHARU
IPC: C23C14/32 , C23C14/34 , C23C14/44 , H01L21/203 , H01L21/285
Abstract: PURPOSE: To enhance the efficiency of film formation by increasing the number of particles which contribute to deposit and at the same time to enhance the coverage property of film formation in a step difference part such as a contact hole by arranging the flying direction of the particles. CONSTITUTION: In a film formation device 1 for forming a deposit film on the surface of a sample 90 by depositing particles 61 generated by sputtering a target 11, an electrification part 21 for electrifying the particles 61 is provided in the nearly flying-direction of the particles 61 generated from the target 11, a direction control part 31 for forming an inward electric field with respect to a particle beam 62 comprising the particles 61 is provided in the nearly flying-direction of the electrified particles 61 and an acceleration part 41 having a potential difference for accelerating the electrified particles 61 is provided between the electrification part 21 of the film formation device 1 and the direction control part 31. Further, a collimator 51 for passing only the particles 61 flying in a certain direction among the particles 61 is provided between the direction control part 31 and the sample 90.
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公开(公告)号:JP2541251B2
公开(公告)日:1996-10-09
申请号:JP29943487
申请日:1987-11-27
Applicant: SONY CORP
Inventor: SHINGU MASATAKA , KURODA HIDEAKI , NAKAJIMA HIDEHARU
IPC: H01L21/8238 , H01L21/336 , H01L27/08 , H01L27/092 , H01L29/78
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