公开(公告)号：GB2128402B

公开(公告)日：1986-03-05

申请号：GB8326055

申请日：1983-09-29

Applicant: SONY CORP

Inventor： ODA TATSUJI ,  MAMINE TAKAYOSHI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/223 ,  H01S3/06

Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

公开(公告)号：GB2128402A

公开(公告)日：1984-04-26

申请号：GB8326055

申请日：1983-09-29

Applicant: SONY CORP

Inventor： ODA TATSUJI ,  MAMINE TAKAYOSHI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/223 ,  H01S3/06

Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

公开(公告)号：FR2534079B1

公开(公告)日：1987-11-13

申请号：FR8315257

申请日：1983-09-26

Applicant: SONY CORP

Inventor： ODA TATSUJI ,  MAMINE TAKAYOSHI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/223 ,  H01S3/18

Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

公开(公告)号：FR2534079A1

公开(公告)日：1984-04-06

申请号：FR8315257

申请日：1983-09-26

Applicant: SONY CORP

Inventor： ODA TATSUJI ,  MAMINE TAKAYOSHI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/223 ,  H01S3/18

Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

公开(公告)号：DE3335371A1

公开(公告)日：1984-04-05

申请号：DE3335371

申请日：1983-09-29

Applicant: SONY CORP

Inventor： ODA TATSUJI ,  MAMINE TAKAYOSHI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/223 ,  H01S3/18

Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

公开(公告)号：JPH01315708A

公开(公告)日：1989-12-20

申请号：JP14858488

申请日：1988-06-15

Applicant: SONY CORP

Inventor： YONEYAMA OSAMU

IPC: G02B6/02 ,  G02B6/42

Abstract: PURPOSE:To increase the power of a light source to a higher powder and to effectively receive the laser beam from the light source in an optical fiber so that said beam is transmitted by forming the light incident end face of a core to a flat shape or forming the light incident end face larger than the other end face so as to correspond the same to the light source having the flat shape. CONSTITUTION:The light source 4 is increased in the power by increasing the width of the light emission part of a semiconductor laser element to flatten said part and to widen the light emission area. The laser beam 7 emitted from the flat light source 4 is focused by a condenser lens 6 and is made incident on the light incident end face 10 of the optical fiber 8 the sectional shape of the core 9 of which is formed flat. The light incident end face 10 of the optical fiber 8 the sectional shape of the core 9 of which is formed flat is provided diametrically opposite to the flat light source 4 in such a manner and, therefore, the coupling efficiency of the light source 4 and the optical fiber 8 is increased as high as >=90%. The emission of the high-power laser beam 7 from the light exit end 11 of the optical fiber 8 is thus possible.

公开(公告)号：JPS6397030A

公开(公告)日：1988-04-27

申请号：JP24224286

申请日：1986-10-13

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  YONEYAMA OSAMU ,  OTOBE TAKASHI

IPC: H04B10/60 ,  H01S5/06 ,  H04B10/2507 ,  H04B10/40 ,  H04B10/50

Abstract: PURPOSE:To obtain a stable digital communication and to evade the degrading in the reliability and service life of a laser diode by using a laser diode whose optical output-current characteristic has a super linear characteristic area for a light emitting element. CONSTITUTION:As the light emitting element, a gain guide type semiconductor laser diode is constituted by using the laser diode whose optical output-current L-I characteristic curve shown by the full line curve 1 of the figure has the super linear characteristic area. This means that a current limited area is provided for that a current collectively flows within the oscillation area of an active layer. In this case, as the degree of light excitation increases, a dip in gain occurs in a gain distribution curve 3A. As a result, a virtually positive refraction factor distribution is generated in the middle of a refraction distribution curve 3B, accordingly, the light shifts to a wave-guided state from a non- wave-guided state, and thus the super linear characteristic area in which the optical output is increased in proportion to the aggregation of input current. Since the modulation is executed by using this area, the degrading of differential efficiency can be improved, therefore, the temperature rise is suppressed, as a result, the life and the reliability of the titled equipment can be improved.

公开(公告)号：JPS61150392A

公开(公告)日：1986-07-09

申请号：JP27557584

申请日：1984-12-25

Applicant: SONY CORP

Inventor： CHIBA MICHIRO ,  YONEYAMA OSAMU ,  ODA TATSUJI

IPC: H01S5/00

Abstract: PURPOSE:To improve the effect of current concentration by applying a protective layer onto the surface of a semiconductor laser, forming a mask in a predetermined region, implanting ions through the protective layer, shaping a current constriction region to sections except the mask, removing the mask and forming an electrode to a removing section when the electrode is shaped to the laser. CONSTITUTION:An N-type AlGaAs first clad layer 2, a GaAs active layer 3, a P-type AlGaAs second clad layer 4, and a P-type cap layer 5 are laminated onto an N-type GaAs substrate 1 and grown in an epitaxial manner, and a protective layer 10 consisting of SiN, SiO2, etc., which do not damage these layers and have not high stopping power even to element ions having large atomicity, is applied when ions are implanted onto the layer 5. Masks 9 com posed of a photo-resist are formed into predetermined regions on the layer 10, and B ions are implanted to sections where there are no mask 9 through the layer 10 to shape current constriction regions 6 intruding to the layer 2. The masks 9 and the layer 10 are removed through etching, electrode windows are bored onto the layer 5 narrowed by the regions 6, and Au electrodes 7 are applied to the windows and an ohmic electrode 8 onto the back of the substrate 1 respectively.

公开(公告)号：JPS6170780A

公开(公告)日：1986-04-11

申请号：JP19218584

申请日：1984-09-13

Applicant: Sony Corp

Inventor： ODA TATSUJI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/02

CPC classification number: H01S5/0201

Abstract: PURPOSE: To form an excellent protective film having superior coating strength to a resonating surface for a semiconductor laser element by previously applying material layers having heat resistance as lift-off films beforehand shaped onto the surface and back of the resonating surface in order to limitedly applying the protective film onto the resonating surface.
CONSTITUTION: Heat-resistant material layers for lifting off protective films are applied onto the whole surfaces of the surfaces 1a and 1b of a crystal plate 1. The heat-resistant material layer is constituted by a material, which sufficiently resists a heating temperature of approximately 200°C required for forming the protective film and can easily be removed by a solvent after heating at the heating temperature, such as silicate glass, doped silicate glass in which an impurity such as phosphorus P is doped to silicate glass, or a polyimide resin. Each semiconductor laser element in the crystal plate 1 is divided, the protective films 12 are applied onto resonating surfaces 11a and 11b for several laser element 11 through a CVD method, an evaporation method, etc., and the heat-resistant material layers 2 are removed by a solvent for the layers 2.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：通过预先施加具有耐热性的材料层作为预先成形为共振表面的表面和背面的剥离膜，形成对于半导体激光元件的谐振表面具有优异的涂层强度的优异的保护膜，以便有限地施加 保护膜在谐振表面上。 构成：将用于剥离保护膜的耐热材料层施加到晶体板1的表面1a和1b的整个表面上。耐热材料层由足以抵抗大约 形成保护膜所需的200℃，并且可以在加热温度下加热后容易地通过溶剂除去硅酸盐玻璃，其中诸如磷P的杂质掺杂到硅酸盐玻璃中的掺杂硅酸盐玻璃或聚酰亚胺 树脂。 晶体板1中的每个半导体激光元件被分割，保护膜12通过CVD法，蒸发法等施加到几个激光元件11的谐振表面11a和11b上，并且耐热材料层2是 通过溶剂去除层2。

公开(公告)号：JPS59154089A

公开(公告)日：1984-09-03

申请号：JP2837983

申请日：1983-02-22

Applicant: Sony Corp

Inventor： MAMINE TAKAYOSHI ,  YONEYAMA OSAMU

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/20 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/22 ,  H01S2301/185

Abstract: PURPOSE: To contrive to improve the astigmatism, threshold current, etc. by increasing or reducing the stripe width S
1 and then reducing the width S
2 , in a planar stripe structure wherein said width is S
1 at a distance from an optical end surface and S
2 at the optical end surface, and varies gently therebetween.
CONSTITUTION: Each semiconductor layer is epitaxially grown on a GaAs substrate 1. For the pattern of the electrode window 7a of an insulation layer 7, the widths S
1 and S
2 are joined to each other with a tapered part 13. When the distance to the imaginary light source of a light parallel with a junction surface from the optical end surface 12 is D, the curvature radius of the cophasal surface of an emitted light is R, and the half power width of the near field image of light at said surface 12 is W, D becomes maximum at some value of R with W as the parameter; therefore the larger the parameter W, the larger the distance D. Besides, the larger the width S
1 almost independently, the larger the radius R, and the larger the width S
2 , the larger the parameter W. Accordingly, S
1 is set large or small with the maximum value as a boundary, and S
2 small, R large, and W small, in order to reduce D. Thereby, the threshold current, astigmatism, etc. improve.
COPYRIGHT: (C)1984,JPO&Japio

Abstract translation: 目的：通过增加或减少条纹宽度S1并随后减小宽度S2来改进散光，阈值电流等，其平面条纹结构中，其中所述宽度为距离光学端面一定距离的S1，而S2 光学端面，并且在它们之间轻微变化。 构成：在GaAs衬底1上外延生长每个半导体层。对于绝缘层7的电极窗口7a的图案，宽度S1和S2通过锥形部分13彼此接合。当到虚拟的距离 与光端面12的接合面平行的光的光源为D，发射光的相面的曲率半径为R，所述表面12的光的近场像的半功率宽度为 W，D在某些R值为最大值，W为参数; 因此，参数W越大，距离D越大。此外，宽度S1几乎独立地越大，半径R越大，宽度S2越大，参数W越大。因此，S1设定为大或小 以最大值作为边界，S2为小，R大，W为小，以减少D.因此，阈值电流，像散等提高。