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公开(公告)号：DE3650133D1
公开(公告)日：1994-12-15
申请号：DE3650133
申请日：1986-02-05
Applicant: SONY CORP
Inventor： MORI YOSHIFUMI , OKADA TSUNEKAZU
Abstract: A semiconductor laser has a semiconductor substrate (1) with a feature (1a) on its surface. The feature (1a), either a projection or a groove, forms a mesa or a mesa groove having relatively sharp edges. Active layers (4) and cladding layers (2, 5) are deposited on this semiconductor substrate (1). The cladding layer (2) deposited directly on the semiconductor substrate (1) has at least one slope (2a) opposite the mesa or mesa groove, on which slope (2a) no active layer is formed during epitaxial growth. The active layer (4) immediately above the cladding layer (2) is prevented from depositing on the slope (2a) of the cladding layer (2) so that no etching process for removing sections of the active layer (4) is necessary. This allows deposition of the active layers (4) and cladding layers (2, 5) on the semiconductor substrate (1) in an uninterrupted sequence of single epitaxial growth steps.
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公开(公告)号：CA1253945A
公开(公告)日：1989-05-09
申请号：CA486983
申请日：1985-07-17
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , OKADA TSUNEKAZU , CHIBA MICHIRO
Abstract: A semiconductor laser is disclosed, which is formed such that on a substrate there are in turn formed a first cladding layer, an active layer, a second cladding layer and a light absorbing layer for limiting a current path and for absorbing a light oscillated out from the active layer. In this case, the light absorbing layer is provided with a removed-away portion of stripe-shape for forming the current path, and in which the width W of the removed-away portion is selected in a range from 1 to 4 .mu.m, the thickness d1 of the active layer is selected so as to satisfy the condition of d1 ? 500 .ANG. and the distance d2 between the active layer and the light absorbing layer is selected in a range from 0.2 to 0.7 .mu.m, respectively.
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公开(公告)号：DE69221647T2
公开(公告)日：1998-01-15
申请号：DE69221647
申请日：1992-02-06
Applicant: SONY CORP
Inventor： ONO KOICHI , OKADA TSUNEKAZU , HATAOKA SEIICHI
IPC: G11B5/588 , G11B15/467 , G11B15/473 , H04N5/7826 , H04N9/82 , H04N9/83 , G11B27/024 , G11B27/10 , G11B5/592
Abstract: A video signal is recorded in successive tracks on a recording medium (2) together with a pilot signal, the latter having a frequency that changes cyclically with a different one of at least four frequencies in successive tracks. A field detector (24) detects sequential fields in the frames of the video signal, and rotation of the usual rotary transducers (1A, 1B) is servo-controlled in response to the detected sequence of fields and a pulse that is generated as the transducers (1A, 1B) rotate to represent the rotational phase of the transducers (1A, 1B). A pilot signal generator (23) generates the pilot signal with an initial frequency determined by an initial field in the detected field sequence, and with this frequency changing as a function of the detected sequential fields.
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公开(公告)号：GB2163288A
公开(公告)日：1986-02-19
申请号：GB8518182
申请日：1985-07-18
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , OKADA TSUNEKAZU , CHIBA MICHIRO
Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.
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公开(公告)号：CA1295403C
公开(公告)日：1992-02-04
申请号：CA567823
申请日：1988-05-26
Applicant: SONY CORP
Inventor： OKADA TSUNEKAZU , YAMAGUCHI NOZOMU
Abstract: According to this invention, in a semiconductor laser apparatus which detects a laser beam from a semiconductor laser element using a light-receiving element so as to perform automatic light power control, a temperature dependency of a power of a laser beam transmitted through an end face protection film of the semiconductor laser element and that of a detection power of the light-receiving element have inverse characteristics to each other, so that a variation in intensity of output light due to a change in temperature is minimized.
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Patent Agency Ranking
公开(公告)号：CA1268846A
公开(公告)日：1990-05-08
申请号：CA501123
申请日：1986-02-05
Applicant: SONY CORP
Inventor： MORI YOSHIFUMI , OKADA TSUNEKAZU
Abstract: A semiconductor laser has a semiconductor substrate with a feature on its surface. The feature, either a projection or a groove, forms a mesa or a mesa groove having relatively sharp edges. Active layers and cladding layers are deposited on this semiconductor substrate. The cladding layer deposited directly on the semiconductor substrate has at least one slope opposite the mesa or mesa groove, on which slope no active layer is formed during epitaxial growth. The active layer immediately above the cladding layer is prevented from depositing on the slope of the cladding layer so that no etching process for removing sections of the active layer is necessary. This allows deposition of the active layers and cladding layers on the semiconductor substrate in an uninterrupted sequence of single epitaxial growth steps.
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公开(公告)号：FR2568064A1
公开(公告)日：1986-01-24
申请号：FR8511015
申请日：1985-07-18
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , OKADA TSUNEKAZU , CHIBA MICHIRO
Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.
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公开(公告)号：DE69221647D1
公开(公告)日：1997-09-25
申请号：DE69221647
申请日：1992-02-06
Applicant: SONY CORP
Inventor： ONO KOICHI , OKADA TSUNEKAZU , HATAOKA SEIICHI
IPC: G11B5/588 , G11B15/467 , G11B15/473 , H04N5/7826 , H04N9/82 , H04N9/83 , G11B27/024 , G11B27/10 , G11B5/592
Abstract: A video signal is recorded in successive tracks on a recording medium (2) together with a pilot signal, the latter having a frequency that changes cyclically with a different one of at least four frequencies in successive tracks. A field detector (24) detects sequential fields in the frames of the video signal, and rotation of the usual rotary transducers (1A, 1B) is servo-controlled in response to the detected sequence of fields and a pulse that is generated as the transducers (1A, 1B) rotate to represent the rotational phase of the transducers (1A, 1B). A pilot signal generator (23) generates the pilot signal with an initial frequency determined by an initial field in the detected field sequence, and with this frequency changing as a function of the detected sequential fields.
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公开(公告)号：SG26295G
公开(公告)日：1995-08-18
申请号：SG26295
申请日：1995-02-17
Applicant: SONY CORP
Inventor： OKADA TSUNEKAZU , YAMAGUCHI NOZOMU
Abstract: A semiconductor laser apparatus detects a laser beam from a semiconductor laser element (11) using a light-receiving element (16) so as to perform automatic light power control. A temperature dependency of the power of a laser beam transmitted through an end face protection film (14, 15) of the semiconductor laser element (11) and the temperature dependence of a detection power of the light-receiving element (16) have inverse characteristics to each other, so that a variation in intensity of output light due to a change in temperature is minimised.
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公开(公告)号：DE3650133T2
公开(公告)日：1995-06-01
申请号：DE3650133
申请日：1986-02-05
Applicant: SONY CORP
Inventor： MORI YOSHIFUMI , OKADA TSUNEKAZU
Abstract: A semiconductor laser has a semiconductor substrate (1) with a feature (1a) on its surface. The feature (1a), either a projection or a groove, forms a mesa or a mesa groove having relatively sharp edges. Active layers (4) and cladding layers (2, 5) are deposited on this semiconductor substrate (1). The cladding layer (2) deposited directly on the semiconductor substrate (1) has at least one slope (2a) opposite the mesa or mesa groove, on which slope (2a) no active layer is formed during epitaxial growth. The active layer (4) immediately above the cladding layer (2) is prevented from depositing on the slope (2a) of the cladding layer (2) so that no etching process for removing sections of the active layer (4) is necessary. This allows deposition of the active layers (4) and cladding layers (2, 5) on the semiconductor substrate (1) in an uninterrupted sequence of single epitaxial growth steps.
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