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公开(公告)号：JP2005026357A
公开(公告)日：2005-01-27
申请号：JP2003188457
申请日：2003-06-30
Inventor： OKUBO KENICHI
IPC: H01L21/76 , H01L21/8234 , H01L27/088 , H01L29/78
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device wherein generation of hump phenomenon is restrained and variation in property can be restrained, and to provide its manufacturing method.
SOLUTION: An element isolation insulating film ISO is embedded in a trench T for element isolation which is formed so that the active region of a semiconductor substrate 10 is divided, a gate insulating film 19 is formed on the surface of the semiconductor substrate 10 in the active region, and a gate electrode 20 is formed in the upper layer of the film 19. The gate insulated film 19 has a constitution that a region in which film thickness is greater than that of the other region is arranged at the ends of the active region. The trench for element isolation is formed in the semiconductor substrate and filled as far as a position higher than the surface of the semiconductor substrate, and a first element isolation insulating film is formed. A part of the first element isolation insulating film is eliminated as far as the end of the active region of the semiconductor substrate is exposed. An end insulating film is formed on the exposed end, the trench for element isolation is filled as far as a position higher than the surface of the semiconductor substrate, a second element isolation insulating film is formed, and the semiconductor device is manufactured.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种半导体器件，其中抑制驼峰现象的产生并且可以抑制性能的变化，并提供其制造方法。 解决方案：元件隔离绝缘膜ISO嵌入用于元件隔离的沟槽T中，其形成为半导体衬底10的有源区被分割，在半导体衬底的表面上形成栅极绝缘膜19 10，在膜19的上层形成有栅电极20.栅极绝缘膜19具有如下结构：膜厚比其他区域大的区域配置在端部 的活跃区域。 用于元件隔离的沟槽形成在半导体衬底中，并且填充到比半导体衬底的表面高的位置，并且形成第一元件隔离绝缘膜。 只要半导体基板的有源区的端部露出，就消除了第一元件隔离绝缘膜的一部分。 在露出端形成端部绝缘膜，用于元件隔离的沟槽填充到比半导体衬底的表面高的位置，形成第二元件隔离绝缘膜，制造半导体器件。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2002247135A
公开(公告)日：2002-08-30
申请号：JP2001044059
申请日：2001-02-20
Applicant: SONY CORP
Inventor： OKUBO KENICHI , CHOKAI YOICHI , KURE YOSHINOBU
Abstract: PROBLEM TO BE SOLVED: To attain transmission with high reliability without fail and communication at a high transmission rate so long as an optical fiber is connected in a communication enabled way as principles when the optical fiber or its combination not considered as the design stage is employed. SOLUTION: A transmitter 22 of a terminal 21 transmits a transmission signal with an existing pattern respectively corresponding to a plurality of different signal transmission rates to a receiver 26 of a terminal 25, the receiver 26 compares the signal with the signal of the existing pattern, detects a signal transmission rate V1 on the basis of a position of the signal when the signal received by the receiver 26 of the terminal 25 is not coincident with the signal with the existing pattern, similarly the transmitter 27 of the terminal 25 and the receiver 23 of the terminal 21 detect a signal transmission rate V2 and the transmitter 27 uses the signal transmission rate which is slower in the both to conduct communication.
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公开(公告)号：JP2001308281A
公开(公告)日：2001-11-02
申请号：JP2001074819
申请日：2001-03-15
Applicant: SONY CORP
Inventor： OKUBO KENICHI
IPC: H01L21/28 , H01L21/265 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a low-resistance polycrystal film wherein the low-resistance polycrystal film that has uniform film quality and a low resistance can be manufactured by performing a heat treatment in a short time, and that makes its throughput high and is superior in its productivity and is suitable for high integration. SOLUTION: A polysilicon film 4 is formed, an impurity ion is implanted in this polysilicon film 4 so that a projection range Rp may be located nearer to the bottom side than the center of the film thickness of the polysilicon film 4, and the ion implanted polysilicon film 4 is subjected to the heat treatment. Preferably, the impurity for ion implantation is an N type impurity such as As. The heat treatment is of a high temperature of 900-1100 deg.C and in a short time of 15-60 minutes.
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公开(公告)号：JP2000022668A
公开(公告)日：2000-01-21
申请号：JP18260498
申请日：1998-06-29
Applicant: SONY CORP
Inventor： CHOKAI YOICHI , SHINO KUNINORI , OKUBO KENICHI , HORIE KAZUYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide an optical communication equipment capable of accelerating the speed of a communication capacity without increasing the number of coated optical fibers (core number) and without using optical wavelength multiplexing. SOLUTION: This equipment is provided with a first light emitting means 28 and a second light emitting means 30 for generating transmission light, a first light receiving means 32 and a second light receiving means 34 for receiving reception light, division circuits 24 and 124 for dividing and supplying signals to be transmitted to the first light emitting means 28 and the second light emitting means 30, multiplex circuits 26 and 126 for multiplexing reception signals from the first light receiving means 32 and the second light receiving means 34, the holder 20 of a first optical fiber 16 for arranging the end part of the first optical fiber 16 for optically connecting a communication means on an opposite side corresponding to the first light emitting means 28 and the first light receiving means 32 and the holder 22 of a second optical fiber 18 for arranging the end part of a second optical fiber 18 for optically connecting the communication means on the opposite side corresponding to the second light emitting means 30 and the second light receiving means 34.
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公开(公告)号：JPH11352363A
公开(公告)日：1999-12-24
申请号：JP16030598
申请日：1998-06-09
Applicant: SONY CORP
Inventor： HORIE KAZUYOSHI , CHOKAI YOICHI , OKUBO KENICHI , SHINO KUNINORI
IPC: G02B6/42 , H04B10/07 , H04B10/25 , H04B10/2581 , H04B10/12 , H04B10/13 , H04B10/135 , H04B10/14
Abstract: PROBLEM TO BE SOLVED: To reduce adjustment parts in the assembly of an optical transmitter- receiver and to reduce the cost of a product. SOLUTION: These optical transmitter-receivers 1a and 1b are constituted so as to connect an optical fiber 2 to be a communication channel in an optical communication circuit, make first optical signals to be communicated incident on the optical fiber 2 and receive second optical signals sent through the optical fiber 2. In this case, they are provided with a package 6, an optical means OPT arranged inside the package 6 for generating the first optical signals and receiving the second optical signals and a holding part H for inserting and holding the optical fiber 2, fixing an optical element 7 for optically coupling the optical fiber 2 and the optical means OPT to be position-adjusted and fixed to the package 6 so as to optically couple the optical fiber 2 and the optical means OPT inside the package 6.
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Patent Agency Ranking
公开(公告)号：JPH10326836A
公开(公告)日：1998-12-08
申请号：JP13381597
申请日：1997-05-23
Applicant: SONY CORP
Inventor： OKUBO KENICHI
IPC: H01L21/8222 , H01L27/082
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device, by which a period of time for production thereof can be shortened without deteriorating the breakdown strength of its element. SOLUTION: An n-type pocket layer 4 is formed in a semiconductor substrate 1, and an n-type epitaxial layer 5 is formed on the semiconductor substrate 1. An p -type embedding diffusion layer 10 is formed in the n-type epitaxial layer 5 corresponding to the n-type pocket layer 4, and an n-type epitaxial layer 12 is formed on the n-type epitaxial layer 5. An n -type embedding diffusion layer 9 may be formed in the different n-type epitaxial layer 5 from the layer corresponding to the n-type pocket layer 4. The n-type pocket layer 4 is formed in the semiconductor substrate 1, and then the n -type embedding diffusion layer 9 is formed in the different n-type epitaxial layer 5 from the portion corresponding thereto, thereby realizing mixed mounting of bipolar transistors with different breakdown strengths on the same semiconductor substrate 1.
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公开(公告)号：JPH06334122A
公开(公告)日：1994-12-02
申请号：JP12255193
申请日：1993-05-25
Applicant: SONY CORP
Inventor： OKUBO KENICHI
IPC: H01L27/04 , H01L21/822
Abstract: PURPOSE:To manufacture a polycrystal film whose film quality is uniform and whose resistance is low by executing a heat treatment for a short time by a method wherein a projection range in the implantation of ions into the polycrystal film is set so as to be situated on the bottom side from the center of the film thickness of the polycrystal film. CONSTITUTION:A polysilicon film 4 is deposited directly on the surface of a semiconductor substrate 2. In order to lower the resistance of the polysilicon film 4, arsenic as N-type impurities is ion-implanted. A projection range Rp at this time is set so as to be situated on the bottom side X from the center of the film thickness of a polycrystal film. Then, an insulating film 6 such as a silicon oxide film or the like is deposited on the surface of the polysilicon film 4, and a heat treatment to activate the impurity ions contained in the polysilicon film 4 is then executed. The sheet resistance of the polysilicon film 4 which has been obtained is low at 110OMEGA/square or lower, an irregularity inside a face in the resistance indicating the uniformity of a film quality is low, and the uniformity of the film quality can be enhanced.
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公开(公告)号：JPS61224140A
公开(公告)日：1986-10-04
申请号：JP6596085
申请日：1985-03-29
Applicant: SONY CORP
Inventor： HOTAI KAZUHIDE , OKUBO KENICHI , OZAWA KAZUNORI , OHASHI MITSUO
Abstract: PURPOSE:To form a carbon protective film having highly uniform film thickness and high strength by forming a metallic magnetic thin film on a substrate and then vapor-depositing a carbon protective film on the metallic magnetic thin film with use of an accelerated electron having >=5KeV energy. CONSTITUTION:The continuous film of a ferromagnetic metal is provided on a disc substrate as the magnetic layer and a carbon protective film is formed on the metallic magnetic film by vacuum deposition using electron-beam heating. An accelerated electron having >=5KeV is used as the electron beam in the vapor deposition. When the energy of the accelerate electron is too low, the ionization rate of the carbon is reduced and the bond strength of the obtained carbon protective film is also decreased. Besides, the energy of the accelerated electron is closely related to the vaporization rate of carbon. Especially, when the vaporization rate is designated as R and the pressure in vaporization as P, more uniform film is formed as the P/R value decreases.
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公开(公告)号：JPS61204834A
公开(公告)日：1986-09-10
申请号：JP4554485
申请日：1985-03-07
Applicant: SONY CORP
Inventor： HAGA SHUICHI , OKUBO KENICHI , YAZAWA KENJI , OHASHI MITSUO
Abstract: PURPOSE:To improve synergistically the durability of a magnetic layer by combining a carbon protective film and silicon dioxide protective film. CONSTITUTION:This magnetic disk is constituted by forming a thin magnetic metallic film 4 on a substrate 1 and forming successively the carbon protective film 5 and a silicon dioxide protective film 6 on the film 4. More specifically the protective film is made into the two-layered construction consisting of the film 5 and the film 6 and the durability, impact resistance, runnability, corrosion resistance, etc. are improved by the synergistic effect thereof. The film 5 has excellent lubricity, corrosion resistance, etc. and the thickness of the film 5 is preferably in a 100-800Angstrom range. On the other hand, the film 6 to be formed on the carbon protective film has excellent head crush resistance and the total thickness of the film 5 and the film 6 is preferably set at
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公开(公告)号：JP2011129562A
公开(公告)日：2011-06-30
申请号：JP2009283878
申请日：2009-12-15
Inventor： ROKUHARA MASAHITO , TAKEUCHI KATSUHIKO , OKUBO KENICHI
IPC: H01L21/331 , H01L21/8222 , H01L21/8224 , H01L21/8234 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L27/082 , H01L29/73 , H01L29/732 , H01L29/93 , H01L29/94
Abstract: PROBLEM TO BE SOLVED: To enable improvement of a current amplification factor hFE even when the depth and concentration of an impurity region are limited by the specifications of a CMOS (Complementary Metal-Oxide Semiconductor) circuit.
SOLUTION: One bipolar transistor includes a lateral main transistor and a vertical auxiliary transistor. The lateral main transistor operates with an emitter region 31, a surface portion of a base region 14B and a collector side region 13B serving as a current channel. The vertical auxiliary transistor operates with the emitter region 31, a deep side portion of the base region 14B contacting the bottom of the emitter region, and a collector deep region 12B serving as a current channel.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：即使当杂质区域的深度和浓度受到CMOS（互补金属氧化物半导体）电路的规格限制时，也能够改善电流放大系数hFE。 解决方案：一个双极晶体管包括横向主晶体管和垂直辅助晶体管。 横向主晶体管以发射极区域31，基极区域14B的表面部分和用作电流通道的集电极区域13B来工作。 垂直辅助晶体管与发射极区域31接合，基极区域14B的与发射极区域的底部接触的深侧部分和用作电流通道的集电极深度区域12B。 版权所有（C）2011，JPO＆INPIT
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