公开(公告)号：JPH09321033A

公开(公告)日：1997-12-12

申请号：JP12999396

申请日：1996-05-24

Applicant: SONY CORP

Inventor： OFUJI YOSHIO ,  SATO CHIYOKO ,  TAKIZAWA TOMOKO ,  KUTOKU NOBUE

IPC: C23C16/46 ,  H01L21/205 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To reduce the warp of a wafer and prevent the microcrack development and break of the wafer by relaxing the stress caused in previous step by a preheater on the wafer and then moving it onto a susceptor. SOLUTION: A wafer 2 being moved from a carrier to a susceptor 3 is laid on a preheater 6 where the stress caused in previous step is removed and then the wafer is laid on the susceptor 3. The wafer before being laid on the carrier 1 is at nearly room temp. while the susceptor is at about 400 deg.C and preheater 6 at about 200 deg.C. The residence time of the wafer on the preheater 6 is about 11.5sec.