公开(公告)号：JP2008135792A

公开(公告)日：2008-06-12

申请号：JP2008047184

申请日：2008-02-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HINO TOMOKIMI ,  TOJO TAKESHI ,  IKEDA MASAO ,  OFUJI YOSHIO ,  UCHIDA SHIRO ,  TOMITANI SHIGETAKA ,  MORITA ETSUO

IPC: H01S5/10

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser, in which the adhesiveness is improved, deterioration at the end face part is suppressed, operation current increases extremely little during energization, and the life is significantly improved, when an end face coat film is formed on an edge face of a resonator formed by processing a nitride III-V compound semiconductor. SOLUTION: In the semiconductor laser using the nitride III-V compound semiconductor, the end face coat film 20 is formed in the edge face 18 of the resonator formed by cleavage etc. via an adhesion layer. The adhesion layer is at least one element selected from the group consisting of Al, Ti, Zr, Hf, Ta, Zn and Si, or a substance containing at least one element selected from the group consisting of Al, Ti, Zr, Hf, Ta, Zn and Si, and oxygen and/or nitrogen, for example, AlO x film etc. The lowest layer of the end face coat film 20 is the Al 2 O 3 film. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种半导体激光器，其中粘合性提高，端面部分的劣化被抑制，通电期间的操作电流增加极小，并且当端面涂层 在通过处理氮化物III-V化合物半导体形成的谐振器的边缘面上形成膜。 解决方案：在使用氮化物III-V化合物半导体的半导体激光器中，端面涂层膜20通过粘合层由切割等形成的谐振器的边缘面18形成。 粘附层为选自Al，Ti，Zr，Hf，Ta，Zn和Si中的至少一种元素，或含有选自Al，Ti，Zr，Hf， Ta，Zn和Si，以及氧和/或氮，例如AlO SB薄膜等。端面涂层膜20的最底层是Al SB SB 3 膜。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JPH09330903A

公开(公告)日：1997-12-22

申请号：JP15256496

申请日：1996-06-13

Applicant: SONY CORP

Inventor： OFUJI YOSHIO ,  KIKUCHI TAKASHI ,  KAWABATA KOHEI ,  SHIMADA ATSUSHI

IPC: H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a jig cleaning apparatus which is capable of reducing the cleaning cost and saving the installation space and excels in safety. SOLUTION: The jig cleaning apparatus has a chemical storage tank 2 for storing chemicals, a chemical weighing tank 3 for preparing and weighing the chemicals, and a cleaning tank 1 for cleaning a jig with the chemicals supplied from the tank 3, and comprises a chemical recovery tank 7 for recovering the chemicals after cleaning the jig, a pump 4b for supplying the chemicals recovered to the tank 7 to the tank 3, and a chemical filter 8 for filtering the chemicals after cleaning the jig. Thus, since the chemicals used for cleaning can be recovered without waste liquid and utilized, the cleaning cost can be lowered. Further, the apparatus having excellent safety by eliminating the transfer of the jig can be provided.

公开(公告)号：JP2004014943A

公开(公告)日：2004-01-15

申请号：JP2002168945

申请日：2002-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  YABUKI YOSHIBUMI ,  ANZAI SHINICHI ,  HINO TOMOKIMI ,  GOTO OSAMU ,  FUJIMOTO TSUTOMU ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser employing a nitride III-V group compound semiconductor, which is driven independently and whose operation before mounting is readily confirmed. SOLUTION: In the multibeam semiconductor laser, having a nitride III-V group compound semiconductor layer, forming a laser structure on one main surface of a substrate 1, and anode electrodes 23, 24 as well as cathode electrodes 20, 21 formed on the same layer, the anode electrode 23 is formed so as to be laid across the cathode electrode 20 through an insulation film 22 while the anode electrode 24 is formed so as to be laid across the cathode electrode 21 through the insulation film 22. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003347659A

公开(公告)日：2003-12-05

申请号：JP2002155418

申请日：2002-05-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YABUKI YOSHIBUMI ,  OFUJI YOSHIO ,  MIZUNO TAKASHI ,  OIKAWA KENJI

IPC: H01S5/042 ,  H01S5/022 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor laser by which assembly time can be reduced and assembly accuracy can be enhanced.
SOLUTION: After a laser chip 60 is mounted on a submount 20, a portion of a p-side electrode 61 and part of an n-side electrode 62 are welded by melting low melting point layers 22B, 23B so as to secure positioning accuracy. Then, after the laser chip 60 and the submount 20 are mounted on a heat sink 30, the laser chip 60, the submount 20 and the heat sink 30 are integrally welded by melting high melting point layers 22A, 23A and a high melting point conductive adhesive layer 40. If the heat sink 30 is heated up to the temperature near the melting points of the high melting point layers 22A, 23A and the high melting point conductive adhesive layer 40 in advance, these can be melted instantly. Since the low melting point layer 22B is formed in the position where a light- emitting point 63 is not overlapped, the adverse effect on the light-emitting point 63 due to heat generation can be prevented.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种可以减少组装时间并且可以提高组装精度的氮化物半导体激光器的制造方法。 解决方案：激光芯片60安装在基座20上后，通过熔化低熔点层22B，23B来焊接p侧电极61和n侧电极62的一部分，以便固定 定位精度。 然后，在将激光芯片60和基座20安装在散热器30上之后，通过熔化高熔点层22A，23A和高熔点导电性材料将激光芯片60，基座20和散热器30整体焊接 如果预先将散热器30加热到高熔点层22A，23A和高熔点导电粘合剂层40的熔点附近的温度，则这些可以立即熔化。 由于低熔点层22B形成在发光点63不重叠的位置，可以防止由于发热而对发光点63的不利影响。 版权所有（C）2004，JPO

公开(公告)号：JPH09321033A

公开(公告)日：1997-12-12

申请号：JP12999396

申请日：1996-05-24

Applicant: SONY CORP

Inventor： OFUJI YOSHIO ,  SATO CHIYOKO ,  TAKIZAWA TOMOKO ,  KUTOKU NOBUE

IPC: C23C16/46 ,  H01L21/205 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To reduce the warp of a wafer and prevent the microcrack development and break of the wafer by relaxing the stress caused in previous step by a preheater on the wafer and then moving it onto a susceptor. SOLUTION: A wafer 2 being moved from a carrier to a susceptor 3 is laid on a preheater 6 where the stress caused in previous step is removed and then the wafer is laid on the susceptor 3. The wafer before being laid on the carrier 1 is at nearly room temp. while the susceptor is at about 400 deg.C and preheater 6 at about 200 deg.C. The residence time of the wafer on the preheater 6 is about 11.5sec.

公开(公告)号：JP2004014795A

公开(公告)日：2004-01-15

申请号：JP2002165954

申请日：2002-06-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YABUKI YOSHIBUMI ,  OFUJI YOSHIO ,  MIZUNO TAKASHI

IPC: H01S5/022 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a submount for a nitride semiconductor laser which can prevent short circuit between electrodes by reducing the rate of defective goods.
SOLUTION: The width of a welding layer 22 corresponding to a p-side electrode 61 is made narrower than the width of the p-side electrode 61. A squeeze-out preventing layer 23 under the welding layer 22 is provided with an exposed region 23A which is not coated with the welding layer 22 along two opposite sides 22D, 22E of the welding layer 22 and a side 22F cross them. The squeeze-out preventing layer 23 is formed of a metal which is not wettable to the welding layer 22, and can prevent the welding layer 22 from squeezing out in the sides 22D, 22E, 22F by means of the exposed region 23A. It is desirable that the side 22F corresponds to the front side of the laser chip 60. In the side 22G, the welding layer 22 coats the squeeze-out preventing layer 23 and a relief region 22H extended over the squeeze-out preventing layer 23 is provided.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JPH09321129A

公开(公告)日：1997-12-12

申请号：JP13705896

申请日：1996-05-30

Applicant: SONY CORP

Inventor： OFUJI YOSHIO ,  ITO HARUYUKI ,  ATSUMI KENJI

IPC: H01L21/673 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To manufacture wafer carriers having desired different wafer housing groove outer diameters at low cost, without machining by integrating an outer frame having a center recess with an inner frame having grooves for housing small size wafers having outer diameters fitted to the center groove of the outer frame. SOLUTION: The wafer carrier 1 comprises a large outer frame 4 having a square center groove 4a and inner frame 5 having small grooves 2c for housing small wafers having outer diameters fitted to the groove 4a the frame 4. The frame 5 is fitted in the groove 4a of the frame 4 into a unit. Thus a wafer carrier 1 is obtained which has the same outer diameter and size as those of a large sized wafer carrier 1a but the same wafer housing groove 2c as that of a small wafer carrier 1b. Thus it is possible to manufacture wafer carriers having desired different wafer housing groove outer diameters at low cost, without machining slits for housing wafers.

公开(公告)号：JP2006216772A

公开(公告)日：2006-08-17

申请号：JP2005027815

申请日：2005-02-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MAEDA OSAMU ,  FUJIMOTO TSUTOMU ,  TAKEYA MOTONOBU ,  HASHITSU TOSHIHIRO ,  SHIOSAKI MASATAKA ,  OFUJI YOSHIO

IPC: H01S5/323 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/34333 ,  H01S5/4031

Abstract: PROBLEM TO BE SOLVED: To provide an optically integrated semiconductor light emitting element improved in light emission efficiency by preventing a leakage current from flowing through a high defect region of a substrate. SOLUTION: The optically integrated semiconductor light emitting element comprises a substrate 10 including one or two or more of high defect regions 10B having second average dislocation density higher than first average dislocation density, in a low defect region 10A that consists of a crystal having the first average dislocation density; and a group III-V nitride semiconductor layer 30 formed on the substrate 10 and having a plurality of light emitting element structures, and a groove 19 in a region (high defect region 30B) including a region corresponding to the high defect region 10B. The groove 19 is provided by removing a part of the high defect region 30B, on which dislocation propagating from the high defect region 10B of the substrate 10 concentrates, from the group III-V nitride semiconductor layer 30. A part of a current injected from an electrode is restrained from going around the light emission region and leaking. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供通过防止漏电流流过衬底的高缺陷区域而提高发光效率的光学集成半导体发光元件。 光集成半导体发光元件包括在低缺陷区域10A中包括一个或两个或更多个具有高于第一平均位错密度的第二平均位错密度的高缺陷区域10B的基板10，该低缺陷区域10A由晶体 具有第一平均位错密度; 以及形成在基板10上并且具有多个发光元件结构的III-V族氮化物半导体层30，以及包括对应于高缺陷区域10B的区域的区域（高缺陷区域30B）中的槽19。 通过去除从III-V族氮化物半导体层30集中的从基板10的高缺陷区域10B传播的位错的高缺陷区域30B的一部分，提供槽19。 电极被抑制在发光区域周围并且泄漏。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2002335053A

公开(公告)日：2002-11-22

申请号：JP2001191614

申请日：2001-06-25

Applicant: SONY CORP

Inventor： HINO TOMOKIMI ,  TOJO TAKESHI ,  IKEDA MASAO ,  OFUJI YOSHIO ,  UCHIDA SHIRO ,  TOMITANI SHIGETAKA ,  MORITA ETSUO

IPC: H01L21/302 ,  H01L21/3065 ,  H01S5/028 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To readily manufacture a semiconductor laser using a nitride III-V compound semiconductor whose operation current increases extremely little during energization, life is long and deterioration is extremely little over aging. SOLUTION: After an edge faced of a resonator of a semiconductor laser is formed wherein a nitride III-V compound semiconductor is used, a process for exposing a resonator edge to a plasma atmosphere of inert gas or heating it at a temperature of 30 deg.C or higher and 700 deg.C or lower in vacuum or inert gas atmosphere, and a process for exposing a resonator edge to a plasma atmosphere of inert gas, are carried out, or a resonator edge face is exposed to plasma atmosphere of inert gas at a temperature of 30 deg.C or higher and 700 deg.C or lower. After these treatments, edge face coating is performed for a resonator edge. Alternately, edge coating is performed for a resonator edge via an adhesion layer.

公开(公告)号：JPH07204454A

公开(公告)日：1995-08-08

申请号：JP1793994

申请日：1994-01-17

Applicant: SONY CORP

Inventor： OFUJI YOSHIO

IPC: B01D53/34 ,  B01D53/77 ,  H01L21/205

Abstract: PURPOSE:To provide an exhaust gas treatment apparatus capable of efficiently performing dilution and capable of safely and easily performing internal washing. CONSTITUTION:In an exhaust gas treatment apparatus 1 equipped with a mixing treatment chamber mixing introduced exhaust gas with water, a mist treatment chamber 3, the dilution chamber 4 communicating with the mixing treatment chamber 2 and an exhaust gas introducing part 5 guiding exhaust gas to the dilution chamber 4, a water contact mechanism 50 bringing the exhaust gas into contact with water before introducing the same into the dilution chamber 4 is provided to the exhaust gas intoruding part 5. Further, in this exhaust gas treatment apparatus 1, a cross plate 81 is provided between a filter 8 and a fan 9 and the inner surfaces of the mixing treatment chamber 2, the mist treatment chamber 3 and the dilution chamber 4 are coated with PVC 10 and a freely openable and closable door 42 is provided to the dilution chamber 4 and an HF supply mechanism 71 supplying fluoric acid automatically is provided.