公开(公告)号：JP2011189019A

公开(公告)日：2011-09-29

申请号：JP2010058384

申请日：2010-03-15

Applicant: Keio Gijuku ,  Sony Corp ,  ソニー株式会社 ,  学校法人慶應義塾

Inventor： HAKOMORI SHIHO ,  YAMAGUCHI KYOJI ,  TAMAMURA KOJI ,  ARAI TSUNENORI ,  ITO ARISA

IPC: A61N5/06 ,  A61B5/0402 ,  A61B18/20 ,  G01N21/64

CPC classification number: A61B18/24 ,  A61B5/0071 ,  A61B5/0084 ,  A61B5/0402 ,  A61B5/1459 ,  A61B5/6885 ,  A61B5/7285 ,  A61N5/062

Abstract: PROBLEM TO BE SOLVED: To provide a discrimination device capable of safely discriminating the contact state of the distal end part of a catheter to the tissue in real time.
SOLUTION: A photodynamic therapy device 1 as the discrimination device irradiates the tissue incorporating a photosensitive chemical which absorbs excitation light and emits fluorescence or the tissue which absorbs the excitation light and emits the fluorescence with the excitation light from the distal end part of a laser catheter 300, and includes a connector 210, a light source 110, and a photodetection part 130. To/from the connector 210, the laser catheter 300 is attachable and detachable. The light source 110 outputs the excitation light to the laser catheter 300 through the connector 210. The photodetection part 130 detects the intensity of the fluorescence made incident from the laser catheter 300 through the connector 210 in order to discriminate the contact or non-contact of the distal end part of the laser catheter 300 to the tissue.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供能够实时地将导管的远端部分与组织的接触状态进行安全判别的鉴别装置。 解决方案：作为鉴别装置的光动力治疗装置1照射包含吸收激发光并发射荧光的感光性化学物质的组织或吸收激发光的组织，并从来自远端部分的激发光发射荧光 激光导管300，并且包括连接器210，光源110和光电检测部130.与连接器210相连接，从而可以安装和拆卸激光导管300。 光源110通过连接器210将激发光输出到激光导管300.光电检测部130通过连接器210检测从激光导管300入射的荧光的强度，以便区分接触或非接触的 激光导管300的远端部分到组织。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009090126A

公开(公告)日：2009-04-30

申请号：JP2008305937

申请日：2008-12-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAMAMURA KOJI

IPC: A61B5/1455 ,  G01N21/27 ,  G01N21/33 ,  G01N33/483 ,  G01N33/72

Abstract: PROBLEM TO BE SOLVED: To provide a more inexpensive device for acquiring information of blood which can obtain results with excellent reproducibility of measurement. SOLUTION: The device includes a portable cylindrical part one end of which is an opening end to which a finger is inserted and the other end a contacting end, and a semiconductor element which emits light with an absorption wavelength for hemoglobin, and has a light source housed in the portable cylindrical part. Also, the device is equipped with a light-receiving part which is housed in the portable cylindrical part in a state where the light-receiving surface is directed to the light source, and a light-blocking part which is mounted on the end of the opening in the portable cylindrical part. In the light-receiving part, to calculate a comparison value with data of a transmitted light intensity of a subject's finger which was previously acquired, data of a transmitted light intensity of the finger is acquired. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种更便宜的用于获取血液信息的装置，其可以获得具有优异的测量再现性的结果。 解决方案：该装置包括便携式圆柱形部件，其一端是手指插入的开口端，另一端是接触端，以及发射具有用于血红蛋白的吸收波长的光的半导体元件，并且具有 容纳在便携式圆柱形部分中的光源。 此外，该装置配备有在光接收表面被引导到光源的状态下容纳在便携式圆筒形部分中的光接收部分，以及安装在光接收部分的端部上的遮光部分 在便携式圆筒部分开口。 在光接收部分中，为了计算与先前获取的被摄体手指的透射光强度的数据的比较值，获取手指的透射光强度的数据。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008258300A

公开(公告)日：2008-10-23

申请号：JP2007097141

申请日：2007-04-03

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  TASAI KUNIHIKO ,  TAMAMURA KOJI ,  NAKAJIMA HIROSHI ,  NAKAMURA HITOSHI

IPC: H01S5/347

CPC classification number: B82Y20/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/285 ,  H01S5/2231 ,  H01S5/3216 ,  H01S5/3422 ,  H01S5/347

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element increasing the carrier concentration of a p-type clad layer while improving the efficiency of light emission.
SOLUTION: An active layer 14 has the type II super-lattice structure of an A layer having the upper end of a valence band higher than the p-type clad layer 13 and a B layer consisting of a mixed crystal having an element configuration equal to the p-type clad layer 13. The effective VBM 141 of the active layer 14 is formed at an energy level higher than the VBM 131 of a Be
0.3 Zn
0.7 Se
0.2 Te
0.8 mixed crystal configuring the p-type clad layer 13, and a junction between the active layer 14 and the p-type clad layer 13 is formed in a type I structure. Consequently, the efficiency of light emission is improved. Since the p-type clad layer 13 contains tellurium (Te) as a group VI element, the carrier concentration of the p-type clad layer 13 is increased, and an electrical conductivity is enhanced.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供提高p型覆层的载流子浓度的半导体发光元件，同时提高发光效率。 解决方案：有源层14具有具有高于p型覆盖层13的价带的上端的A层的II型超晶格结构和由具有元素的混合晶体组成的B层 构造等于p型覆盖层13.有源层14的有效VBM 141形成在高于Be 0.3 Zn 0.7 0.2 Te 混合晶体，并且有源层14和p型覆盖层13之间的接合部形成在 I型结构。 因此，发光效率提高。 由于p型覆盖层13含有作为VI族元素的碲（Te），因此p型覆盖层13的载流子浓度增加，导电性提高。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2004221384A

公开(公告)日：2004-08-05

申请号：JP2003008011

申请日：2003-01-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAMAMURA KOJI

IPC: H01L21/28 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, along with its manufacturing method, capable of reducing disturbance in lateral mode in a relatively simple process to improve top hat form of NFP.
SOLUTION: An n-type semiconductor layer, an active layer 15, and a p-type semiconductor layer are laminated on a substrate 11, and a p-side electrode 21 is provided on the p-type semiconductor layer. The p-type semiconductor layer is provided with a current constriction part 19 that corresponds to a light emitting region 15A of the active layer 15. A current guide region 19A whose carrier concentration is higher than the p-type semiconductor layer is formed beside the current constriction part 19. The drive current supplied from a p-side electrode 21 is guided to the light emitting region 15A directly below the p-side electrode 21 along the current guide region 19A of low resistance. Thus, the disturbance in optical output distribution at the end of the light emitting region 15A is reduced and the top hat form of NFP is improved for an improved lateral mode characteristics.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003229631A

公开(公告)日：2003-08-15

申请号：JP2002027983

申请日：2002-02-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： TAMAMURA KOJI ,  MOTOKI KENSAKU

IPC: H01L21/52 ,  H01S5/022 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a method for mounting a nitride compound semiconductor element capable of being accurately positioned, by utilizing the quality of a semiconductor substrate periodically having a high density fault region when the semiconductor element is mounted. SOLUTION: The method for mounting the nitride compound semiconductor element comprises the steps of die bonding a nitride semiconductor laser element 10 on a heat sink 40, and bringing an emitting end face 34 of the laser element 10 into planar coincidence with the front surface 42 of the sink 40 when the element 10 is die bonded to the sink 40. The method further comprises the steps of stepping down a laser beam, for example, and illuminating it on the laser element 10, and detecting positions of through holes 32 as a positioning mark of the element 10. The method also comprises the step of positioning the element 110 on the sink 40 so that a distance between the hole 32 and the mark 44 on the sink 40 becomes a predetermined distance. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002231705A

公开(公告)日：2002-08-16

申请号：JP2001029531

申请日：2001-02-06

Applicant: SONY CORP

Inventor： TAMAMURA KOJI ,  YAMAGUCHI KYOJI

IPC: H01L21/308 ,  H01L21/265 ,  H01L31/10 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To realize a working method using wet etching which does not deteriorate element characteristics, because when working of a nitride based compound semiconductor layer is performed by dry etching, etching damage is left, which becomes a cause of deterioration of element characteristics. SOLUTION: This etching method is provided with a process wherein ion implantation is performed to a nitride based compound semiconductor layer 2 to form a region 4 to be etched by deteriorating crystallinity, and a process wherein the region 4 where crystallinity is deteriorated is removed selectively with respect to a region where crystallinity is not deteriorated by wet etching.

公开(公告)号：JPH11287806A

公开(公告)日：1999-10-19

申请号：JP9107998

申请日：1998-04-03

Applicant: SONY CORP

Inventor： TAMAMURA KOJI

IPC: G01N33/72 ,  A61B5/145 ,  A61B5/1455 ,  G01N21/31 ,  G01N21/33 ,  A61B5/14

Abstract: PROBLEM TO BE SOLVED: To provide a blood-inspecting meter which can obtain results of superior measurement reproducibility more inexpensively. SOLUTION: A blood-inspecting meter 1 for measuring a concentration of a chromoprotein in a blood includes a black box 11, a light source 12 constituted of a semiconductor element (a) emitting a measurement light of a predetermined wavelength in a band from ultraviolet to green and set in the black box 11, a photodetecting part 13 set in the black box 11 to face the light source 12, and a display part 14 for displaying an intensity of light detected at the photodetecting part 13. The semiconductor element (a) is a light-emitting diode or laser diode.

公开(公告)号：JPH1174616A

公开(公告)日：1999-03-16

申请号：JP23263197

申请日：1997-08-28

Applicant: SONY CORP

Inventor： TAMAMURA KOJI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To form a current constriction region without requiring a complicated control of ion implantation by constituting the current constriction region for conducting the operating region of an active layer selectively of a region where the dopant is inactivated by introducing hydrogen. SOLUTION: A buffer layer 10, a first clad layer 11 of the same conductivity type, a nondoped or lightly doped second clad layer 12, and a heavily doped cap layer 3 of same conductivity type are laminated sequentially on a semiconductor substrate 1. A current constriction region 14 is formed in the second clad layer 12 on the opposite sides of a central stripe working region on an active layer 2 extending orthogonally to the paper plane, for example. The current constriction region 14 comprises a region where the dopant is inactivated by introducing hydrogen, i.e., a hydrogen passivation region.

公开(公告)号：JPH08139416A

公开(公告)日：1996-05-31

申请号：JP27873894

申请日：1994-11-14

Applicant: SONY CORP

Inventor： TAMAMURA KOJI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  IKEDA MASAO

IPC: C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To provide a method for obtaining the crytical film thickness of an active layer or the like of an optical semiconductor device composed of a II-VI compound semiconductor layer, and form the optical semiconductor device under the optimum condition. CONSTITUTION: The relation between the film thickness of a compound semiconductor layer and the PL intensity is obtained by observing photoluminescence(PL) of the compound semiconductor layer which PL corresponds with the film thickness. The film thickness wherein the PL intensity forms a peak IP is obtained as the critical film thickness hPL. A relational equation for approximating the critical film thickness by setting the composition ratio of cadmium(Cd) in the compound semiconductor layer as a function is obtained. By using the relational equation, the critical film thickness of the compound semiconductor layer having a desired Cd composition ratio is obtained. The film thickness of the active layer is designed to be less than or equal to the critical film thickness obtained in the above manner. The active layer is formed to have the film thickness designed when a II-VI compound semiconductor layer containing an active layer is deposited on a substrate, and an optical semiconductor device is formed.

公开(公告)号：JPH0697590A

公开(公告)日：1994-04-08

申请号：JP26968492

申请日：1992-09-11

Applicant: SONY CORP

Inventor： TAMAMURA KOJI

IPC: H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To make the title oscillator superior in carrier and optical confinement and to contrive a reduction in the operating current of the oscillator. CONSTITUTION:A first superlattice layer 14 is formed between an active layer 15 and a first conductivity type clad layer 13 and a second graded layer 17 formed by detroying a second superlattice layer 16 with zinc is formed on the interface between the layer 15 and a second conductivity type clad layer 20 or in its vicinity. After that, when the layer 20 and a second conductivity type cap layer 21 are formed, the zinc in the layer 17 is moved in the layer 14 and a first graded layer 22 is formed by destroying the layer 14 with the zinc.