公开(公告)号：JPH03276785A

公开(公告)日：1991-12-06

申请号：JP7797590

申请日：1990-03-27

Applicant: SONY CORP

Inventor： TODE ATSUSHI ,  YAMAMOTO SUNAO ,  IKEDA MASAO

IPC: H01S5/00

Abstract: PURPOSE:To enhance a PL Iight-emitting intensity and to realize a lower threshold value and a longer life by specifying the carrier concentration at interface sides coming into contact with an active layer and in its neighborhood of an AlGaInP-based n-type clad layer and an AlGaInP-based p-type clad layer. CONSTITUTION:Regarding carrier concentrations of individual clad layers 2, 4 at a DH-type AlGaInP-based semiconductor laser 10, the n-type carrier concentration at the n-type clad layer 2 is set at 2 to 3X10 cm and the p-type carrier concentration at the p-type clad layer 4 is set at 3 to 4X10 cm ; then, the carrier concentrations become optimum and a PL light-emitting intensity becomes maximum. At this time, only a part of several hundred Angstrom near an active layer 3 of the semiconductor laser is set to an optimum carrier concentration; the carrier concentration in parts other than the part near the active layer 3 is set to a comparatively large carrier concentration as in conventional cases. As a result, the PL light-emitting intensity is enhanced without a drop in the element characteristic such as a drop in the carrier mobility or the like. Thereby, characteristics of a low threshold value, a long life and the like can be enhanced.