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公开(公告)号：CA1244940A
公开(公告)日：1988-11-15
申请号：CA484748
申请日：1985-06-21
Applicant: SONY CORP
Inventor： MINAMI TOSHIHIKO , UMEZAWA ISAO , SHINTANI KENJI
IPC: H01L23/50 , G02B6/42 , G11B7/08 , G11B7/09 , G11B7/12 , G11B7/13 , H01L23/48 , H01L27/14 , H01L27/144 , H01L31/02
Abstract: A photosensor devie and an optical pickup device incorporating the photosensor device are advantageously used in an optical compact disc player of the type where the optical pickup device is driven along a path at an acute tilt angle relative to the sides of a rectangular casing. The photosensor has a plurality of photosensitive elements aligned in a first direction and a plurality of terminal leads extending parallel to each other and perpendicular to a second direction so that the photosensor may be mounted on a circuit board in a conventional configuration to save space. Within the optical pickup device, the photosensitive elements are aligned at a mounting angle which is a function of the tile angle so that the three optical beams are received thereon in the proper orientation.
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公开(公告)号：AT53687T
公开(公告)日：1990-06-15
申请号：AT85304595
申请日：1985-06-27
Applicant: SONY CORP
Inventor： MINAMI TOSHIHIKO , UMEZAWA ISAO , SHINTANI KENJI
IPC: H01L23/50 , G02B6/42 , G11B7/08 , G11B7/09 , G11B7/12 , G11B7/13 , H01L23/48 , H01L27/14 , H01L27/144 , H01L31/02
Abstract: A photosensor device (38) and an optical pick-up device (50) incorporating the photosensor device (38) are advantageously used in an optical compact disc player of the type where the optical pick-up device (50) is driven along a path at an acute tilt angle (p) relative to the sides of a rectangular casing (40). The photosensor device (38) has a plurality of photosensitive elements (3E, etc.) aligned in a first direction and a plurality of terminal leads (9) extending parallel to each other and perpendicular to a second direction so that the photosensor (38) may be mounted on a circuit board in a conventional configuration to save space. Within the optical pick-up device (50), the photosensitive elements (3E, etc.) are aligned at a mounting angle (8) which is a function of the tilt angle (p) so that the three optical beams are received thereon in the proper orientation.
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公开(公告)号：DE3578245D1
公开(公告)日：1990-07-19
申请号：DE3578245
申请日：1985-06-27
Applicant: SONY CORP
Inventor： MINAMI TOSHIHIKO , UMEZAWA ISAO , SHINTANI KENJI
IPC: H01L23/50 , G02B6/42 , G11B7/08 , G11B7/09 , G11B7/12 , G11B7/13 , H01L23/48 , H01L27/14 , H01L27/144 , H01L31/02
Abstract: A photosensor device (38) and an optical pick-up device (50) incorporating the photosensor device (38) are advantageously used in an optical compact disc player of the type where the optical pick-up device (50) is driven along a path at an acute tilt angle (p) relative to the sides of a rectangular casing (40). The photosensor device (38) has a plurality of photosensitive elements (3E, etc.) aligned in a first direction and a plurality of terminal leads (9) extending parallel to each other and perpendicular to a second direction so that the photosensor (38) may be mounted on a circuit board in a conventional configuration to save space. Within the optical pick-up device (50), the photosensitive elements (3E, etc.) are aligned at a mounting angle (8) which is a function of the tilt angle (p) so that the three optical beams are received thereon in the proper orientation.
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公开(公告)号：JPH0745912A
公开(公告)日：1995-02-14
申请号：JP20865893
申请日：1993-07-30
Applicant: SONY CORP
Inventor： UMEZAWA ISAO
Abstract: PURPOSE:To prevent flowing of a leakage current from a photodiode to a laser diode. CONSTITUTION:A channel stopper formed of a p type semiconductor region 12 is provided in a part between an n type semiconductor region 3 and an n type semiconductor region 4 in a p type epitaxial growth layer 2 forming a photodiode PD. A structure formed by filling a groove with an insulator may be used also as the channel stopper.
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公开(公告)号：JPS63151085A
公开(公告)日：1988-06-23
申请号：JP29960086
申请日：1986-12-16
Applicant: SONY CORP
Inventor： YONEYAMA OSAMU , UMEZAWA ISAO
Abstract: PURPOSE:To prevent an insensitive region from generating in a photodetecting region by composing a region for detecting an optical distribution in the signal reader, etc., for a CD player of one photodiode. CONSTITUTION:In a photodetector, a photodetecting region Pl for detecting a focus by an astigmatism method is composed of one photodiode (semiconductor region) 3. A focusing state is detected from a photodetection signal (optical current) extracted through 4 signal extraction electrodes 8a-8d. Beams of light incident to the sections of the region 3 are photoelectrically converted at the incident positions, the photocurrents generated as the result flow in branch currents to the electrodes 8a-8d, the ratio of the amplitude of each branch current flowing to each of the signal electrodes 8a-8d depends upon a distance from the generated position to contacts Ca-Cd of the electrodes 8a-8d, and the branch currents increase larger as the distance is shorter. Accordingly, the photocurrents flowing to the electrodes 8a-8d reflect the optical distribution of the incident light incident in the region P1.
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Patent Agency Ranking
公开(公告)号：JPS63128773A
公开(公告)日：1988-06-01
申请号：JP27631286
申请日：1986-11-19
Applicant: SONY CORP
Inventor： ODA TATSUJI , UMEZAWA ISAO
Abstract: PURPOSE:To prevent the light-receiving sensitivity from being influenced by the irregularity of a wavelength of the incident light and by the change in the temperature and to keep the sensitivity almost constant by a method wherein a light-transmitting film composed of at least one layer is formed on a light-receiving part and the film thickness of this light- transmitting film is set so as to minimize the difference between a light-transmission factor with reference to a first wavelength within a variation range of the wavelength of the received light and another light-transmission factor with reference to a second wavelength. CONSTITUTION:When a light-transmitting film 12 is composed of one layer and the light enters a photodetector 11 as shown in the figure, a light-transmission factor T(lambda) becomes a periodic function with reference to a thickness d1 of the light-transmitting film 12. If the wavelength of the incident light is changed from lambda1 to lambda2 due to the temperature or the like, the light-transmission factor T(lambda1) with reference to the wavelength lambda1 is expressed by a curve 21 and the light-transmission factor T(lambda2) with reference to the wavelength lambda2 is expressed by another curve 22. Accordingly, the difference between the light transmission factors at both wavelength lambda1 and lambda2, i.e., the difference in the sensitivity DELTAT=T(lambda1)-T(lambda2), shows the changed characteristic as expressed by the curve with reference to a film thickness d1; these exists the film thickness where the difference in the sensitivity DELTAT at both wavelength becomes zero. If the value DELTAT=0 is selected as the film thickness, the light-receiving sensitivity is hardly changed even when the wavelength of the incident light is changed.
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公开(公告)号：JPS62171178A
公开(公告)日：1987-07-28
申请号：JP1223286
申请日：1986-01-24
Applicant: SONY CORP
Inventor： WATANABE SEIICHI , YONEYAMA OSAMU , UMEZAWA ISAO
Abstract: PURPOSE:To manufacture a semiconductor laser device with a photodiode for monitor operating even when a power supply having both polarity is not used by working the photodiode and a semiconductor laser diode by a single power supply. CONSTITUTION:Laser beams emitted from a laser-beam outgoing end surface 9 for an active layer 7 are received by a photodiode 3 and monitored. laser beams emitted from a laser-beam outgoing end surface 10 are projected outside a semiconductor laser device as original laser beams. Since the semiconductor laser device electrically isolates a section, with which a laser diode 5 is bonded, by a P-type semiconductor region 4, there is no relationship of electrical connection between the photodiode 3 and the laser diode 5. Accordingly, the photodiode 3 and the laser diode 5 can each be connected to a power supply separately, and even a positive power supply and even a negative power supply can also be used without hindrance.
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公开(公告)号：JP2540850B2
公开(公告)日：1996-10-09
申请号：JP7256587
申请日：1987-03-25
Applicant: SONY CORP
Inventor： SONE HARUO , UMEZAWA ISAO , YONEYAMA OSAMU
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公开(公告)号：JPS63237492A
公开(公告)日：1988-10-03
申请号：JP7256587
申请日：1987-03-25
Applicant: SONY CORP
Inventor： SONE HARUO , UMEZAWA ISAO , YONEYAMA OSAMU
Abstract: PURPOSE:To obtain a semiconductor laser wherein it is possible to apply a forward voltage and a reverse voltage to a laser diode and a photodiode, respectively, from a single power source, by forming a common terminal connecting an anode of one of the laser diode and the photodiode for monitoring and a cathode of the other one. CONSTITUTION:The title semiconductor laser is provided with an epitaxial growth layer 2 on the surface of a P type semiconductor substrate 1, and an N-type diffusion layer 3 selectively formed on the surface of the growth layer 2 constitutes the cathode of a photodiode PD. An electrode film 6 is formed so as to be connected to the N-type diffusion layer 3 through a window 7a of an oxide film 5 formed on the surface of the growth layer 2. An electrode film 8 is formed so as to be connected to an N-type diffusion layer 4 through a window 7b of an oxide film 5, and a laser diode LD is bonded on the electrode film 8. The electrode film 8 and the electrode film 12 are connected with a connecting wire to complete an electrical connection. On the basis of this circuit constitution, a forward voltage and a reverse voltage can be applied to the LD and the PD, respectively, from a single power source, by applying a + potential to the electrode film 8 of the LD and the electrode film 6 of the PD, and applying a - potential to the substrate 1.
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公开(公告)号：JPS6356980A
公开(公告)日：1988-03-11
申请号：JP20210986
申请日：1986-08-28
Applicant: SONY CORP
Inventor： WATANABE SEIICHI , YONEYAMA OSAMU , UMEZAWA ISAO
Abstract: PURPOSE:To realize reduction of threshold current, by a method wherein a part having light confining function to prevent photon generated in an oscillation part from vanishing is constituted, by providing both sides of the oscillation part in an active layer with step portions CONSTITUTION:A semiconductor substrate 1 composed of n-type GaAs single crystal is provided, on a main surface of which a stripe-type protrusion is formed. On both sides of it, step portions 2A and 2B are formed so as to confront each other, which constitute a projecting step-difference part 2. Then on the substrate 1, the following are continuously grown in order by epitaxy; i.e, an n-type AlGaAs system clad layer 3, an active layer 4, a p-type clad layer 5 and a p-type cap layer 7. In the active layer 4, step portions 6A and 6B corresponding to the step difference part 2 are formed, between which a step-difference part 6 is formed. An insulative layer 8 of SiO2 and the like which has a stripe-type electrode window 8a facing the step-difference part 6 is arranged. Thereon an electrode 9 is stuck to the cap layer 7 through the window 8a, and an electrode 10 is provided on the other surface of the substrate 1. Simplification of manufacturing process and reduction of threshold current can be realized, thereby.
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