公开(公告)号：JP2013222292A

公开(公告)日：2013-10-28

申请号：JP2012092874

申请日：2012-04-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAKO YOICHIRO ,  TANGE AKIRA ,  SERITA KAZUTOSHI ,  YAMAMURO TORU ,  KOGA YUKI ,  ANDO KATSUMI ,  MORISHITA RYO

IPC: G06F3/0481 ,  G01R31/36 ,  G06F1/28 ,  G06F3/048

CPC classification number: G08B21/182 ,  B60L11/1861 ,  B60L2250/16 ,  Y02T10/7005 ,  Y02T10/7044 ,  Y02T10/705

Abstract: PROBLEM TO BE SOLVED: To provide an information processing device, an information processing method, and a program in which users can ascertain information indicating the characteristics of a battery and an operating device that operates using electric power obtained from the battery by using one symbol.SOLUTION: Provided is an information processing device provided with: a characteristic detection unit that detects a characteristic of a battery and a characteristic of an operating device that operates using electric power obtained from the battery; a symbol setting unit that sets one symbol on which information corresponding to the detected characteristics is reflected; and a display control unit that causes the set symbol to be displayed.

Abstract translation: 要解决的问题：提供一种信息处理装置，信息处理方法和程序，其中用户可以通过使用一个符号来确定指示电池的特性的信息和使用从电池获得的电力进行操作的操作装置。 解决方案：提供一种信息处理装置，具有：特性检测单元，其检测电池的特性和使用从电池获得的电力进行动作的操作装置的特性; 符号设置单元，其设置反映与检测到的特性对应的信息的一个符号; 以及使得设置的符号被显示的显示控制单元。

公开(公告)号：JP2001338926A

公开(公告)日：2001-12-07

申请号：JP2000157542

申请日：2000-05-29

Applicant: SONY CORP

Inventor： KOMAI HISANORI ,  NOGAMI TAKESHI ,  KITO HIDEYOSHI ,  TAGUCHI MITSURU ,  ANDO KATSUMI

IPC: H01L21/3205 ,  C23F1/18 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/42

Abstract: PROBLEM TO BE SOLVED: To realize electrolytic polishing in the state where excessive polishing and unpolished remainder do not occur due to the local step produced in a material to be polished, and to introduce the electrolytic polishing into a semiconductor manufacturing process. SOLUTION: This method comprises a step of forming a wiring material film 16 that buries a recessed part 13 formed in an insulating film 12 on the insulating film 12 formed on the substrate 11 by a plating method, a step of relaxing the local step S produced on a surface of the wiring material film 16 while keeping the state that the wiring material film 16 is left on the insulating film 12, and a step of removing the wiring material film 16 on the insulating film 12 by the electrolytic polishing so as to leave the wiring material film 16 only in a groove 13.

公开(公告)号：JPH06196813A

公开(公告)日：1994-07-15

申请号：JP23186493

申请日：1993-09-17

Applicant: SONY CORP

Inventor： FUTAKI MAKOTO ,  ANDO KATSUMI ,  YAMAMOTO SUNAO

IPC: G11B7/125 ,  H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S3/18

Abstract: PURPOSE:To reduce re-incident reflected rays to an optical system by the reflected rays of returned rays from the greater part of the front end face of a semiconductor substrate oppositely faced to the optical system by retreating the front end face of the substrate just under at least a laser-beam outgoing end. CONSTITUTION:In a semiconductor laser, in which a laser diode section 2 is formed onto a semiconductor base body 1, the front end face 1a of the semiconductor base body just under at least the laser-beam outgoing end (a) of the semiconductor laser is retreated to a section rearer than a laser-beam outgoing end face. The front end face 1a is formed in an optically roughened surface in the constitution. Since the substrate thickness of the semiconductor base body 1 occupies the greater part of the total thickness of the laser practically in the semiconductor laser, rays are scattered by retreating the front end face 1a and forming the front end face in the optically roughened surface in a section just under at least the laser-beam outgoing end face (a) of the front end face, thus reducing the efficiency of returned rays to an optical system, then improving a tracking error and the deterioration of C/N.