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公开(公告)号：GB2344600B
公开(公告)日：2001-09-26
申请号：GB9928967
申请日：1999-12-07
Applicant: SONY CORP
Inventor： HANAOKA HIDEAKI , HISAMATSU FUMIAKI , YAMASHITA MASATAKA , KOBAYASHI MASAHIRO
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公开(公告)号：GB2344600A
公开(公告)日：2000-06-14
申请号：GB9928967
申请日：1999-12-07
Applicant: SONY CORP
Inventor： HANAOKA HIDEAKI , HISAMATSU FUMIAKI , YAMASHITA MASATAKA , KOBAYASHI MASAHIRO
Abstract: An anti-reflection film enabling adjustment of light transmittance in a wide range and a display device having a desirable display quality is achieved by forming an anti-reflection film on the surface of a panel base for displaying an image. The anti-reflection film includes first and second optical absorption films, each of which is composed of at least one kind selected from a group consisting of a metal film, a metal nitride film and a metal oxide film, and a dielectric film having a refractive index ranging from about 1.4 to about 1.9, which is formed between the first and second optical absorption films. For example, the following three films are sequentially formed on a panel glass for a Braun tube: a first optical absorption film of TiN having a thickness of 10 nm; a dielectric film of Al 2 O 3, having a thickness of 82 nm; and a second optical absorption film of TiN having a thickness of 12 nm, to thus form an anti-reflection film.
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公开(公告)号：DE19854645A1
公开(公告)日：1999-06-02
申请号：DE19854645
申请日：1998-11-26
Applicant: SONY CORP
Inventor： ISHIKAWA HIROICHI , LIPPEY BARRET , KOBAYASHI TOMIO , OSHIMA YOSHIHIRO , MITSUHASHI SHINOBU , YAMASHITA MASATAKA , HONJO YOSHIHARU , KANEKO KOICHI
IPC: G02B1/11 , B32B7/02 , B32B9/00 , C03C17/34 , C03C17/42 , C23C14/08 , C23C14/10 , C23C14/56 , C23C28/04 , G02B1/10 , G02B1/116 , G02B1/14 , G09F9/00 , H01J9/24 , H01J29/89 , C23C28/00 , C23C14/35 , C03C17/245
Abstract: In an anti-reflection silicon oxide and indium-tin oxide (ITO) multilayer film, the uppermost silicon oxide film (25) is thicker than the immediately underlying ITO film (24). An anti-reflection film comprises a multilayer of silicon oxide and indium-tin oxide (ITO) films (21, 22) on a base film (11), the uppermost silicon oxide film (25) being thicker than the immediately underlying ITO film (24). An Independent claim is also included for production of the above anti-reflection film. Preferred Features: The lowermost film (21), adjacent the base film (11), is a SiOx film (x = 0.5-1.9) which is deposited while controlling the degree of oxidation of silicon by measuring the light absorption of the film (21). Prior to forming the lowermost silicon oxide film (21), the base film (11) is subjected to a surface activation treatment by glow discharge using an aluminum electrode. All the films are formed using a dual magnetron sputtering system.
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