公开(公告)号：EP1536283A4

公开(公告)日：2008-05-07

申请号：EP03738542

申请日：2003-06-27

Applicant: SONY CORP

Inventor： WATANABE YOKO ,  OMORI SHINJI ,  IWASE KAZUYA ,  AMAI KEIKO ,  YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F1/84 ,  H01L21/027 ,  G03F1/16

CPC classification number: G03F1/20 ,  G03F1/44 ,  G03F1/84

Abstract: A mask and an inspection method for the mask, capable of a destructive inspection without the need of producing an inspecting mask and a more accurate nondestructive inspection. The mask comprises an exposing thin film having, in a prescribed pattern, a part for transmitting an exposure beam and a part for not transmitting it, a thick film part formed surrounding the exposing thin film and supporting the exposing thin film, and an inspecting thin film having a part for transmitting an exposure beam and a part for not transmitting it, formed on part of the thick film part away from the exposing thin film and being equal in thickness and material to the exposing thin film; an inspection method for the mask using an inspecting thin film; and a production method for a semiconductor device that involves lithographing using the exposing thin film of the mask.

公开(公告)号：DE10295694T1

公开(公告)日：2003-12-18

申请号：DE10295694

申请日：2002-11-15

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027

Abstract: To provide a mask able to reduce the thickness of a membrane and maintain the mask strength and a method of producing a semiconductor device able to form a fine pattern with a high accuracy and a method of producing the mask. A mask comprising a thin film, holes formed at the thin film through which a charged particle beam (preferably an electron beam) passes, a support layer formed at one side of the thin film, and apertures formed at a larger size than the holes at least at portions of said holes of said support layer and a method of producing the same and a method of producing a semiconductor device including a lithography step using the same.

公开(公告)号：JP2004311839A

公开(公告)日：2004-11-04

申请号：JP2003105654

申请日：2003-04-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F1/22 ,  G03F1/24 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing mask blanks having a thinner pattern formation area than the other area in a method different from etching.
SOLUTION: A pattern formation area A is opened by molding working to manufacture a supporting reinforcing body 10 with a beam 10a. Then, a porous layer 21, a thin film 12 and a reinforcing layer 11 made of, for example, silicon oxide are formed on a supporting substrate 20 constituted of a silicon wafer. This is manufactured in the same way as the manufacturing method of an SOI layer. Next, the supporting reinforcing body 10 and the supporting substrate 20 having the thin film 12 are attached by a room temperature bonding technology. Then, the supporting substrate 20 is peeled with the porous layer 21 as a boundary by water jet. At last, the reinforcing layer 11 made of the silicon oxide is selectively removed so that mask blanks can be manufactured.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在不同于蚀刻的方法中制造具有比其他区域更薄的图案形成区域的掩模毛坯的方法。 解决方案：图案形成区域A通过模制加工而打开，以制造具有梁10a的支撑增强体10。 然后，在由硅晶片构成的支撑基板20上形成由例如氧化硅构成的多孔层21，薄膜12和增强层11。 其制造方法与SOI层的制造方法相同。 接下来，通过室温接合技术安装支撑加强体10和具有薄膜12的支撑基板20。 然后，以水射流作为边界的多孔层21剥离支撑基板20。 最后，选择性地除去由氧化硅制成的增强层11，从而可以制造掩模坯料。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004088072A

公开(公告)日：2004-03-18

申请号：JP2003129523

申请日：2003-05-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOSHIZAWA MASAKI ,  WATANABE YOKO ,  OMORI SHINJI ,  IWASE KAZUYA ,  AMAI KEIKO

IPC: G03F1/20 ,  G03F1/84 ,  H01L21/027 ,  G03F1/16

CPC classification number: G03F1/20 ,  G03F1/44 ,  G03F1/84

Abstract: PROBLEM TO BE SOLVED: To provide a mask and an inspecting method for conducting destructive inspection without fabricating a checking mask and conducting non-destructive inspection accurately.
SOLUTION: In the inspecting method for checking a mask by using the mask and an inspection thin film, an exposing thin film 2 having a prescribed pattern made up of a transmitting part and a non-transmitting part of an exposing beam, and a thick film part 3 formed around the exposing thin film for supporting the exposing thin film are provided. In addition, an inspection thin film 4 having a transmitting part and a non-transmitting part of the exposing beam, formed at a part of the thick film part far from the exposing thin film, and having the same thickness and made of the same material as the exposing thin film is provided.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于进行破坏性检查的掩模和检查方法，而不制造检查面罩并进行非破坏性检查。 解决方案：在通过使用掩模和检查薄膜检查掩模的检查方法中，具有由透光部分和曝光光束的非透射部分组成的规定图案的曝光薄膜2，以及 提供了形成在用于支撑曝光薄膜的曝光薄膜周围的厚膜部分3。 此外，具有透光部的透射部和非透射部的检查用薄膜4形成在远离曝光薄膜的厚膜部的一部分，并且具有相同的厚度并由相同的材料制成 因为提供了曝光薄膜。 版权所有（C）2004，JPO

公开(公告)号：JP2003151890A

公开(公告)日：2003-05-23

申请号：JP2001352014

申请日：2001-11-16

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a mask and a manufacturing method of a mask that can thin a membrane and at the same time can maintain the strength of the mask, and to provide a manufacturing method of a semiconductor device for accurately forming a fine pattern. SOLUTION: The mask has a thin film 2, a hole 3 for transmitting a charged particle beam (preferably, an electron beam) formed in the thin film 2, a support layer 4 that is formed on one surface of the thin film 2, and an opening 5 that is formed in the support layer 4 and is formed in a self-alignment manner to the hole 3 so that the opening 5 has a diameter larger than the hole. The method for manufacturing the mask, and the manufacturing method of semiconductor devices including a lithography process using it are provided.

公开(公告)号：JP2003109891A

公开(公告)日：2003-04-11

申请号：JP2001305172

申请日：2001-10-01

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F1/70 ,  G03F7/20 ,  H01J37/305 ,  H01L21/027 ,  G03F1/08 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a method for performing accurate pattern transfer on the basis of measured beam blurring by accurately measuring beam blurring in a semiconductor lithography device. SOLUTION: A lithography evaluation pattern 1 includes a positioning mark 2, an X-directional line 4, a Y-directional line and an oblique directional line 5. When the pattern is used, beam intensity can be measured and evaluated in an XY plane, and the beam blurring is minimized to enable accurate pattern transfer by adjusting a lithography device on the basis of obtained beam blurring.

公开(公告)号：JP2002343710A

公开(公告)日：2002-11-29

申请号：JP2001151159

申请日：2001-05-21

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F7/20 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a mask on which a fine pattern is formed with high accuracy, its producing method and a method for fabricating a semiconductor device. SOLUTION: The mask comprises a silicon single crystal film 107 having a (100) face in parallel with the surface, a thin film 103 including the silicon single crystal film 107, a hole 105 for passing a charged particle beam, a (111) face defining the wall face of the hole 105 and can delay the etching rate as compared with the (100) face, and conductive layers 121, 122 and 123 for supporting the thin film formed thereon. A method for producing the mask and a method for fabricating a semiconductor device are also provided.

公开(公告)号：JP2002231599A

公开(公告)日：2002-08-16

申请号：JP2001020750

申请日：2001-01-29

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F1/22 ,  G03F1/24 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a mask stamper that can increase efficiency in mask manufacture, and at the same time can improve the machining accuracy of a pattern, and to provide a mask, the method of manufacturing the mask, and the method of manufacturing a semiconductor device. SOLUTION: This method of manufacturing the mask includes a process for forming a thin film 114 on one surface of a substrate, a process for forming a protection layer 112 on the thin film 114, a process for removing one portion of the substrate from the other side of the substrate for locally exposing the thin film 114, a process for providing a permeation section 107 where an electromagnetic wave with a specific wavelength permeates and a shielding section 103 where the electromagnetic wave is shielded at the exposed section of the thin film 114, and a process for removing a protection layer 112. The mask stamper and the mask are formed by the manufacturing method. The method of manufacturing the semiconductor device uses them.

公开(公告)号：JP2000268708A

公开(公告)日：2000-09-29

申请号：JP7358499

申请日：1999-03-18

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: H01J37/073 ,  H01J1/308 ,  H01J37/28 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To provide an electron beam source capable of emitting an electron beam having a narrow distribution of energy and having a current in enough quantity. SOLUTION: This electron beam source has a cathode base material composed of a conductor, a cathode composed of at least two pairs of cover layers formed on the cathode base material and having lattice matching with the cathode base material, a quantum well layer formed on the opposite side of the cover layers to the cathode base material, and an anode which is provided spacedly from the cathode and between which and the cathode a voltage is placed. The cover layers are composed of a first material layer whose conductivity is lower than that of the cathode base material and a second material layer which is formed on the first material layer and whose conductivity is higher than that of the first material layer. The first material layer is thicker than its lower layer, while the second material layer is thinner than its lower layer. The cover layers have a modulation-period superlattice structure.

公开(公告)号：JP2000057755A

公开(公告)日：2000-02-25

申请号：JP22974798

申请日：1998-08-14

Applicant: SONY CORP

Inventor： IKEDA KATSUMI ,  YOSHIZAWA MASAKI ,  SANO TAKANOBU

IPC: G11B27/17 ,  G11B15/087

Abstract: PROBLEM TO BE SOLVED: To improve apparatus reliability through accurate detection of tape position. SOLUTION: It is checked whether the tape position data obtained by a tape position calculating means is the calculated error or not. If it is defined as the calculated error, retry of the calculating operation by the tape position calculating means is executed. When the adequate tape position data can be obtained, it is used for respective operation controls.