公开(公告)号：JP2003167249A

公开(公告)日：2003-06-13

申请号：JP2001368722

申请日：2001-12-03

Applicant: SONY CORP ,  ST LCD KK

Inventor： FUKUNAGA YOKO ,  KOMATSU HIROSHI ,  AIDA NOBUHIRO ,  MUNAKATA MASAKI

IPC: G02B5/08 ,  G02F1/1335

Abstract: PROBLEM TO BE SOLVED: To improve discoloration of a reflection film consisting of silver or an alloy containing silver and to enhance display quality. SOLUTION: In a manufacturing method for a liquid crystal display element 1 having a liquid crystal layer 16 between a pair of substrates 2 and 3 disposed opposite to each other and the reflection film 9 consisting of silver or the alloy containing silver and formed on one of the pair of substrates 2 and 3, after the reflection film is formed, the reflection film 9 is subjected to heat treatment and/or liquid chemical treatment with alkaline liquid chemical prior to the next stage. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2004002946A

公开(公告)日：2004-01-08

申请号：JP2002210482

申请日：2002-07-19

Applicant: Mitsubishi Chemicals Corp ,  Sony Corp ,  St Lcd Kk ,  エスティ・エルシーディ株式会社 ,  ソニー株式会社 ,  三菱化学株式会社

Inventor： MUNAKATA MASAKI ,  KOMATSU HIROHITO ,  KUMON TETSUSHI ,  TERAMOTO KAZUMASA ,  AIDA NOBUHIRO ,  MOTOI MASAKAZU ,  SAITO NORIYUKI ,  SAKAKIBARA TOSHIAKI ,  ISHIKAWA MAKOTO

IPC: C23F1/30 ,  H01L21/28 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To stably carry out a uniform a wet-etching for a silver or silver alloy thin film layer by suppressing the occurrence of etch residual dross in a silver or silver alloy and suppressing the occurrence of side etching caused by over etching.
SOLUTION: In the etching method where a silver or silver alloy thin film present on the surface of a substrate is subjected to etching with an etching liquid, the etching liquid in which the concentration of silver ions is 0.005 to 1 wt.% is filled into an etching liquid feeding apparatus, and the etching liquid is brought into contact with the surface of the substrate having the silver or silver alloy thin film layer.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003234475A

公开(公告)日：2003-08-22

申请号：JP2002031867

申请日：2002-02-08

Applicant: SONY CORP ,  ST LCD KK

Inventor： TAKATOKU MASATO ,  KOMATSU HIROSHI ,  AIDA NOBUHIRO

IPC: G02F1/1368 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of preventing insulating destruction during manufacturing process of the semiconductor device having a thin film transistor, and improving yield. SOLUTION: In this method for manufacturing a semiconductor device by forming a conductive pattern 3 having a gate electrode 3a on an insulating substrate 1, laminating a semiconductor thin film layer 5 through an insulating film, and introducing impurity to the semiconductor thin film layer 5 by ion implantation from a mask pattern 26 covering the upper part of the gate electrode 3a, the upper part of the gate electrode 3a and the overlapped part of the conductive pattern 3, the semiconductor thin film layer 5, and the edge of the overlapped part are covered with a mask pattern 26, while an impurity introduction area in the semiconductor thin film layer 5 is exposed at the time of implantation ion. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003133560A

公开(公告)日：2003-05-09

申请号：JP2001331921

申请日：2001-10-30

Applicant: SONY CORP ,  ST LCD KK

Inventor： TAKATOKU MASATO ,  AIDA NOBUHIRO ,  KOMATSU HIROSHI

IPC: H01L21/66 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To surely obtain an evaluation result at the time of evaluating the crystal condition of a polysilicon film formed by a low temperature polycrystallization process. SOLUTION: After an amorphous silicon film 6a is formed on a substrate 2, the substrate 2 is cleaned in a cleaning process. In more practical, a pre- process to form a surface oxide layer 6s on the amorphous silicon film 6a with a solution including ozone and a post-process to remove the surface oxide layer 6s with a solution including fluoric acid are performed. Thereafter, an oxide film 6t is formed on the surface of the cleaned amorphous silicon film 6a. Next, a polysilicon film 6 which becomes the channel layer of a thin film transistor is formed by performing a laser annealing process to the amorphous silicon film 6a. In this case, the linearity and/or periodicity of the space structure of the film surface of the polysilicon film 6 is detected and the condition of the polysilicon film 6 is evaluated based on the detection result of the linearity and/or periodicity.