-
公开(公告)号：JP2000315652A
公开(公告)日：2000-11-14
申请号：JP12351699
申请日：1999-04-30
Inventor： MINEGISHI MASAHIRO , HAYASHI HISAO , TAKATOKU MASATO
IPC: H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To uniformize crystallinity in an overlapped part and a non-overalpped part, when irradiation areas of laser light are overlapped and a semiconductor thin film having a large area is crystalized. SOLUTION: In this crystalization method, the surface of a substrate 1 is divided along a dividing line DL into a first divided area D1 and a second divided area D2, while a laser light is shaped and an irradiation region R is adjusted so that the respective divided regions D1 and D2 are partly irradiated. The first divided region D1 is repeatedly irradiated by a laser light, while the irradiation region R is scanned parallel to the dividing line DL, and a semiconductor thin film 2 included in the first divided region D1 is crystallized. Likewise, a semiconductor thin film 2 included in the second divided region D2 is crystallized. In this case, the irradiation region R of the laser light emitted to the first divided area D1 and that emitted to the second divided region D2 are overlapped each other on their end parts. An overlapped part W is adjusted in a manner that its width WX parallel to the dividing DL may be 80% or less of a width VX of a non-overlapped part V. In addition, an intensity EW of laser light energy in the overlapped part is controlled to 95% or less of energy concentration EV in the non-overlapped part V.
-
公开(公告)号：JP2003234475A
公开(公告)日：2003-08-22
申请号：JP2002031867
申请日：2002-02-08
Inventor： TAKATOKU MASATO , KOMATSU HIROSHI , AIDA NOBUHIRO
IPC: G02F1/1368 , H01L21/336 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of preventing insulating destruction during manufacturing process of the semiconductor device having a thin film transistor, and improving yield. SOLUTION: In this method for manufacturing a semiconductor device by forming a conductive pattern 3 having a gate electrode 3a on an insulating substrate 1, laminating a semiconductor thin film layer 5 through an insulating film, and introducing impurity to the semiconductor thin film layer 5 by ion implantation from a mask pattern 26 covering the upper part of the gate electrode 3a, the upper part of the gate electrode 3a and the overlapped part of the conductive pattern 3, the semiconductor thin film layer 5, and the edge of the overlapped part are covered with a mask pattern 26, while an impurity introduction area in the semiconductor thin film layer 5 is exposed at the time of implantation ion. COPYRIGHT: (C)2003,JPO
-
公开(公告)号：JP2003133560A
公开(公告)日：2003-05-09
申请号：JP2001331921
申请日：2001-10-30
Inventor： TAKATOKU MASATO , AIDA NOBUHIRO , KOMATSU HIROSHI
IPC: H01L21/66 , H01L21/20 , H01L21/336 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To surely obtain an evaluation result at the time of evaluating the crystal condition of a polysilicon film formed by a low temperature polycrystallization process. SOLUTION: After an amorphous silicon film 6a is formed on a substrate 2, the substrate 2 is cleaned in a cleaning process. In more practical, a pre- process to form a surface oxide layer 6s on the amorphous silicon film 6a with a solution including ozone and a post-process to remove the surface oxide layer 6s with a solution including fluoric acid are performed. Thereafter, an oxide film 6t is formed on the surface of the cleaned amorphous silicon film 6a. Next, a polysilicon film 6 which becomes the channel layer of a thin film transistor is formed by performing a laser annealing process to the amorphous silicon film 6a. In this case, the linearity and/or periodicity of the space structure of the film surface of the polysilicon film 6 is detected and the condition of the polysilicon film 6 is evaluated based on the detection result of the linearity and/or periodicity.
-
公开(公告)号：JP2015023054A
公开(公告)日：2015-02-02
申请号：JP2013147742
申请日：2013-07-16
Inventor： YAMADA YASUHIRO , TAKATOKU MASATO
IPC: H01L29/786 , H01L27/144 , H01L27/146 , H04N5/32
CPC classification number: H01L27/14643 , H01L27/14632
Abstract: 【課題】トランジスタの特性劣化を抑制して高信頼性を実現することが可能な放射線撮像装置を提供する。【解決手段】放射線撮像装置は、放射線に基づく信号電荷を発生する複数の画素と、複数の画素から信号電荷を読み出すための電界効果型のトランジスタとを備え、トランジスタは、活性層を含む半導体層と、半導体層に対向配置された第1ゲート電極と、半導体層と第1ゲート電極との間に設けられ、第1のシリコン酸化物膜を含む第1のゲート絶縁膜と、半導体層に電気的に接続されたソース電極およびドレイン電極と、第1のゲート絶縁膜とは異なる層に設けられた第2のシリコン酸化物膜とを有する。ここで、第1のゲート絶縁膜の第1のシリコン酸化物膜は、第2のシリコン酸化物膜よりも膜密度の小さい多孔質膜である。【選択図】図1
Abstract translation: 要解决的问题：提供能够通过抑制晶体管的特性劣化而实现高可靠性的放射线摄像装置。解决方案：放射线摄像装置包括用于产生基于辐射的信号电荷的多个像素和用于读出的场效应晶体管 信号从多个像素中收取电荷。 晶体管具有：包括有源层的半导体层; 面对所述半导体层的第一栅电极; 设置在所述半导体层和所述第一栅极之间并且包括第一氧化硅膜的第一栅极绝缘膜; 电连接到半导体层的源电极和漏电极; 以及设置在与设置有第一栅极绝缘膜的层不同的层中的第二氧化硅膜。 第一栅极绝缘膜的第一氧化硅膜是膜密度低于第二氧化硅膜的多孔膜。
-
公开(公告)号：JP2003133328A
公开(公告)日：2003-05-09
申请号：JP2001330374
申请日：2001-10-29
Applicant: SONY CORP
Inventor： TAKATOKU MASATO
IPC: G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To provide the method for manufacturing a thin-film transistor, by which the horizontal crystal growth of polycrystalline silicon can be realized efficiently and rationally. SOLUTION: A gate electrode 2 of a thin-film transistor is formed on an insulative substrate. A semiconductor thin film 5 made of polycrystalline silicon is formed on the gate electrode 2, with a gate insulation film interposed in between. Impurities are selectively introduced to the semiconductor thin film 5 to form a thin-film transistor channel region, and the source region and the drain region on both sides thereof. Furthermore, a metal film is formed on the semiconductor thin film 5, with an interlayer insulation film interposed in between to block the source region side and drain region side, and the metal film is patterned to make wirings 8D, 8S and 8Z so that the channel region does not become blocked. A laser light is given to the semiconductor thin film 5 via the wirings 8D, 8S and 8Z, and temperature gradient produced between the channel region and the source and drain regions on both sides thereof is used to improve the crystallinity of the polycrystalline silicon.
-
Patent Agency Ranking
公开(公告)号：JP2002231959A
公开(公告)日：2002-08-16
申请号：JP2001025729
申请日：2001-02-01
Applicant: SONY CORP
Inventor： MINEGISHI MASAHIRO , TAKATOKU MASATO
IPC: G02F1/1368 , G09F9/30 , H01L21/20 , H01L21/336 , H01L27/32 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L51/50 , H05B33/14 , H05B33/26
Abstract: PROBLEM TO BE SOLVED: To improve the performance of a thin film transistor by magnifying the size of the crystal obtained by laser annealing, in a bottom gate structure of polycrystalline thin film transistor. SOLUTION: The thin film transistor is of a bottom gate type consisting of a gate electrode made on a glass substrate 10, a gate insulating film 23 made to cover the gate electrode 1, and a polycrystalline semiconductor film 5 made on the gate insulating film 23. The gate electrode 1 has stacked structure where at least two layers of conductive materials are piled up, and the conductive material in the upper layer 1b close to the semiconductor film 5 is lower in heat conductivity than the conductive material in the lower layer 1a close to the substrate 0. That is, for the conductive material in the upper layer 1b, the heat conductivity is close to that of the glass board 10. Accordingly, the thermal conditions becomes close each other in a gate region and a non-gate region, and it becomes possible to optimize the process conditions for laser annealing, covering both regions, consequently this thin film transistor can materialize the magnification of the crystal size.
-
公开(公告)号：JP2001332741A
公开(公告)日：2001-11-30
申请号：JP2000154049
申请日：2000-05-25
Applicant: SONY CORP
Inventor： TAKATOKU MASATO
IPC: G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/306 , H01L21/308 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/10 , H05B33/26 , H05B33/14
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing technique which enables an island-like pattern, while holding clean a surface state of a semiconductor thin film constituting an element region of thin film transistors. SOLUTION: A thin film transistor has a lamination structure containing a semiconductor thin film 5, a gate insulation film 3 formed so as to come into contact with the surface, and a gate electrode 1 arranged on a surface side of a semiconductor thin film 5. Further, the transistor is formed in a predetermined flat surface profile on a substrate 0. In order to manufacture this, first, a first step is carried on that the semiconductor thin film 5 having a clean surface is formed on an upper surface of the substrate 0. Next, a second step is carried on that a protection film PF is formed so as to coat a clean surface of the semiconductor thin film 5. Furthermore, a third step is carried on that the semiconductor thin film 5 is patterned along with the protection film PF in conformity to a flat surface profile of the thin film transistor. After that, a fourth step is carried on that the protection film PF is removed from the patterned semiconductor thin film 5 to expose the clean surface. Consecutively, a fifth step is carried on that the gate insulation film 3 is formed so as to come into contact with the exposed surface of the semiconductor thin film 5.
-
公开(公告)号：JP2001217423A
公开(公告)日：2001-08-10
申请号：JP2000023475
申请日：2000-02-01
Applicant: SONY CORP
Inventor： HAYASHI HISAO , FUJINO MASAHIRO , SHIMOGAICHI YASUSHI , TAKATOKU MASATO
IPC: G09F9/30 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To make uniform and optimal the recrystallizing process by laser- annealing of a semiconductor thin film to be an active layer of a bottom gate type thin film transistor. SOLUTION: The thin film semiconductor device is composed of bottom-gate- structured thin film transistors integrated on an insulation substrate 1, each transistor consisting of a gate electrode 5, a gate insulation film 4 and a semiconductor thin film 2 laminated in this order. The gate electrode 4 is made of a metal material and its thickness Tm is less than 100 nm, the gate insulation film 4 has a thickness Ti over the gate electrode 5 thickness Tm, and the semiconductor thin film 2 is of a polycrystalline silicon crystallized by laser beam irradiation. Thinning the gate electrode thickness reduces its heat capacity and the thermal condition difference between on the metal-made gate electrode and on the insulation substrate made of glass, etc.
-
公开(公告)号：JP2001196592A
公开(公告)日：2001-07-19
申请号：JP2000005995
申请日：2000-01-07
Applicant: SONY CORP
Inventor： WADA HIROYUKI , HIRATA YOSHIMI , TAGUCHI AYUMI , TATSUKI KOICHI , UMETSU NOBUHIKO , KUBOTA SHIGEO , ABE TETSUO , OOSHIMA AKIFUMI , HATTORI TADASHI , TAKATOKU MASATO , SUGANO YUKIYASU
IPC: H01L21/20 , G02F1/136 , G02F1/1365 , G02F1/1368 , H01L21/268 , H01L21/336 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To evaluate the state of a polysilicon film which is formed by excimer laser annealing an amorphous silicon film. SOLUTION: The state of a formed polysilicon film is evaluated to acquire the manufacture margin of the film, and based on the margin, a power is set with an excimer laser annealing device. At the formation of the playsilicon film by annealing an amorphous silicon film, linearity and periodicity appear in the spatial structure in the film surface of formed polysilicon film, according to the energy given to the amorphous silicon at annealing. After the linearity and periodicity are image-processed, the linearity and periodicity of the image are made into numerical values utilizing an auto-correlation function. Then, the auto-correlation value of the surface image of polysilicon film in an S/D region as well as that on a gate electrode are acquired for calculating the laser power which satisfies both, and this is set as the manufacture margin.
-
公开(公告)号：JP2013012696A
公开(公告)日：2013-01-17
申请号：JP2011177460
申请日：2011-08-15
Inventor： YAMADA YASUHIRO , TANAKA TSUTOMU , TAKATOKU MASATO , ITO RYOICHI , SENDA MICHIRU
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L31/105 , H01L27/14663 , H01L31/02164
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion element and a photoelectric conversion device, which can reduce the influence of noise light.SOLUTION: A photodiode comprises: a first conductivity type (e.g., p-type) semiconductor layer, an i-type semiconductor layer and a second conductivity type (e.g., n-type) semiconductor layer on a substrate in this order; and a light-shielding layer between the substrate and the first conductivity type semiconductor layer. A signal charge is extracted (photoelectrically converted) on the basis of light incident from the second conductivity type semiconductor layer side. Because the light-shielding layer is provided between the substrate and the first conductivity type semiconductor layer, light among light incident from the second conductivity type semiconductor layer side, which is not absorbed but transmitted through the first conductivity type semiconductor layer and exited from the substrate side is blocked, and light travelling from the substrate side toward the first conductivity type semiconductor layer is blocked.
Abstract translation: 要解决的问题：提供可以减少噪声光的影响的光电转换元件和光电转换装置。 解决方案：光电二极管包括：依次在衬底上的第一导电类型（例如，p型）半导体层，i型半导体层和第二导电类型（例如n型）半导体层; 以及在所述基板和所述第一导电型半导体层之间的遮光层。 基于从第二导电类型半导体层侧入射的光，提取（光电转换）信号电荷。 由于遮光层设置在基板和第一导电型半导体层之间，因此从第二导电型半导体层侧入射的光不被第一导电型半导体层吸收而是从基板排出的光 侧被阻挡，从衬底侧向第一导电型半导体层行进的光被阻挡。 版权所有（C）2013，JPO＆INPIT
-
-
-
-
-
-
-
-
-
Search Results
51
records
(took 0.031 seconds)
