公开(公告)号：US20190006411A1

公开(公告)日：2019-01-03

申请号：US16104802

申请日：2018-08-17

Applicant: SONY CORPORATION

Inventor： Taiichiro WATANABE ,  Ryosuke NAKAMURA ,  Yusuke SATO ,  Fumihiko KOGA

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/359

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

公开(公告)号：US20170338272A1

公开(公告)日：2017-11-23

申请号：US15533904

申请日：2015-12-11

Applicant: SONY CORPORATION

Inventor： Taiichiro WATANABE ,  Ryosuke NAKAMURA ,  Yusuke SATO ,  Fumihiko KOGA

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14656 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/3745 ,  H04N5/378

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

公开(公告)号：US20160247848A1

公开(公告)日：2016-08-25

申请号：US15087733

申请日：2016-03-31

Applicant: SONY CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

CPC classification number: H01L27/14614 ,  G01J1/44 ,  G01J2001/448 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14689

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate (21); a photodiode (11A, 11B) formed in the semiconductor substrate; a transistor (10) having a gate electrode (14) part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer (13) provided between the gate electrode and the photodiode.

Abstract translation: 提供一种固态摄像装置，包括：半导体衬底（21）; 形成在半导体衬底中的光电二极管（11A，11B） 晶体管（10），其栅极电极（14）的一部分或全部嵌入所述半导体衬底中，所述晶体管被配置为经由所述栅极电极从所述光电二极管读取信号电荷; 以及设置在栅电极和光电二极管之间的电荷转移层（13）。

公开(公告)号：US20170243906A1

公开(公告)日：2017-08-24

申请号：US15448247

申请日：2017-03-02

Applicant: SONY CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  G01J1/44 ,  G01J2001/448 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14689

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

公开(公告)号：US20200219918A1

公开(公告)日：2020-07-09

申请号：US16728195

申请日：2019-12-27

Applicant: SONY CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

公开(公告)号：US20160093659A1

公开(公告)日：2016-03-31

申请号：US14889552

申请日：2014-05-09

Applicant: SONY CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

CPC classification number: H01L27/14614 ,  G01J1/44 ,  G01J2001/448 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14689

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate (21); a photodiode (11A, 11B) formed in the semiconductor substrate; a transistor (10) having a gate electrode (14) part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer (13) provided between the gate electrode and the photodiode.