公开(公告)号：US20210004554A1

公开(公告)日：2021-01-07

申请号：US16971429

申请日：2018-12-28

Applicant: SONY CORPORATION

Inventor： Naoko KOBAYASHI ,  Yasunori KAMADA ,  Hiroyuki SHIGEI ,  Toru AMANO ,  Futoshi TAKEUCHI ,  Toshio ENOKIDO ,  Yusuke SATO

IPC: G06K9/00 ,  G06F3/041 ,  G06F3/044 ,  F21V8/00

Abstract: An electronic device including: a transparent panel section in which a plurality of transparent light-emitting elements is disposed; and an imaging section that is disposed under a partial region of the transparent panel section, and images, via the transparent panel section, an object which is in contact with or in proximity to the partial region of the transparent panel section.

公开(公告)号：US20190006411A1

公开(公告)日：2019-01-03

申请号：US16104802

申请日：2018-08-17

Applicant: SONY CORPORATION

Inventor： Taiichiro WATANABE ,  Ryosuke NAKAMURA ,  Yusuke SATO ,  Fumihiko KOGA

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/359

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

公开(公告)号：US20170338272A1

公开(公告)日：2017-11-23

申请号：US15533904

申请日：2015-12-11

Applicant: SONY CORPORATION

Inventor： Taiichiro WATANABE ,  Ryosuke NAKAMURA ,  Yusuke SATO ,  Fumihiko KOGA

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14656 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/3745 ,  H04N5/378

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.