公开(公告)号：JP2012178578A

公开(公告)日：2012-09-13

申请号：JP2012093087

申请日：2012-04-16

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社

Inventor： YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a substrate etching apparatus capable of uniformly etching an entire surface of a substrate even when the substrate is large, and which is free from deterioration of etching shapes.SOLUTION: A substrate etching apparatus comprises: a chamber 2 which has a plasma formation space 9 and a processing space 6; a coil 16 which is provided on an outside of a portion corresponding to the plasma formation space 9; a stage 10 which is provided in the processing space 6 to place a substrate K; processing gas supply means 19 for supplying processing gas into the plasma formation space 9; high-frequency power supply means 17 for supplying high-frequency power to the coil 16; and stage power supply means 13 for supplying the high-frequency power to the stage 10. A plasma density adjusting member 20 is fixed to an inner wall of the chamber 2 between the plasma formation space 9 and the stage 10. During a period that plasma passes through the plasma density adjusting member 20, density in a plane of the plasma is leveled, and then the plasma is guided to the substrate K.

Abstract translation: 解决的问题：提供一种能够均匀地蚀刻基板的整个表面的基板蚀刻装置，即使在基板大的情况下，也不会导致蚀刻形状的劣化。 解决方案：基板蚀刻装置包括：具有等离子体形成空间9和处理空间6的室2; 设置在对应于等离子体形成空间9的部分的外侧的线圈16; 设置在处理空间6中以放置基板K的台架10; 用于将处理气体供应到等离子体形成空间9中的处理气体供给装置19; 用于向线圈16提供高频电力的高频电源装置17; 以及用于向舞台10提供高频电力的舞台电源装置13.等离子体密度调节构件20固定在等离子体形成空间9和舞台10之间的室2的内壁上。等离子体 通过等离子体密度调节构件20，将等离子体的平面中的密度调平，然后将等离子体引导到衬底K.版权所有：（C）2012，JPO＆INPIT

公开(公告)号：JP2012169652A

公开(公告)日：2012-09-06

申请号：JP2012092941

申请日：2012-04-16

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社

Inventor： YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma etching method by which an entirely uniform surface etching can be performed even on a large-size substrate, and no deterioration is caused in etching form.SOLUTION: The plasma etching method comprises: a plasma generation step which includes producing an induced electric field in a plasma generation space 9, and supplying a process gas to the plasma generation space 9 to generate plasma thereof; and a plasma-density control step which includes positioning the upper end of a funnel-shaped plasma-density control member 20 composed of a grounded conductive material, opening at its upper and lower ends, and having a smaller inner diameter at the lower end in comparison to the inner diameters at the upper end and at its trunk part defining the plasma generation space 9 on the inner wall of a chamber 2 between the plasma generation space 9 and a base 10, and which includes causing the plasma generated in the plasma generation space 9 to pass through the opening of the plasma-density control member 20 thereby leading the plasma to a substrate K put on the base 10 while controlling the areal density thereof.

Abstract translation: 要解决的问题：为了提供等离子体蚀刻方法，即使在大尺寸基板上也能进行​​完全均匀的表面蚀刻，并且不会导致蚀刻形式的劣化。 等离子体蚀刻方法包括：等离子体产生步骤，其包括在等离子体产生空间9中产生感应电场，并将处理气体供应到等离子体产生空间9以产生其等离子体; 和等离子体密度控制步骤，其包括将由接地导电材料构成的漏斗形等离子体密度控制构件20的上端定位在其上端和下端开口，并且在下端具有较小内径 与在等离子体产生空间9和基座10之间的腔室2的内壁上限定等离子体产生空间9的上端和其主干部分的内径进行比较，其包括使等离子体产生的等离子体产生 空间9通过等离子体密度控制构件20的开口，从而将等离子体引导到放置在基座10上的基板K，同时控制其面密度。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：EP2579299A4

公开(公告)日：2014-02-26

申请号：EP11786684

申请日：2011-05-25

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： IKEMOTO NAOYA ,  YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/32137

公开(公告)号：EP2416351A4

公开(公告)日：2015-08-12

申请号：EP09842709

申请日：2009-12-10

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/321 ,  H01J37/32623

Abstract: The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus 1 has a chamber 2 having a plasma generating space 9 and a processing space 6, a coil 16 disposed on the outside of a portion corresponding to the plasma generating space 9, a platen 10 which is provided in the processing space 6 and on which a substrate K is to be placed, a processing gas supply mechanism 19 for supplying a processing gas into the plasma generating space 9, an RF power supply mechanism 17 for supplying RF power to the coil 16, and a power supply mechanism for platen 13 for supplying RF power to the platen 10. A cylindrical plasma density adjusting member 20 which is made of a conductive material grounded is fixedly provided on an inner wall of the chamber 2 between the plasma generating space 9 and the platen 10. While plasma passes through the plasma density adjusting member 20, the in-plane density of the plasma is equalized, and then the plasma is guided to the substrate K.