公开(公告)号：EP2903019A4

公开(公告)日：2016-06-08

申请号：EP13842461

申请日：2013-09-25

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： YAMAMOTO TAKASHI ,  OTA KAZUYA ,  SASAKURA MASAHIRO ,  HAYASHI YASUYUKI

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32724 ,  H01J2237/0656 ,  H01J2237/15 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.

公开(公告)号：EP2579299A4

公开(公告)日：2014-02-26

申请号：EP11786684

申请日：2011-05-25

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： IKEMOTO NAOYA ,  YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/32137

公开(公告)号：EP2479781A4

公开(公告)日：2012-08-29

申请号：EP10816963

申请日：2010-07-16

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： YAMAMOTO TAKASHI ,  IKEMOTO NAOYA

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357

公开(公告)号：EP2416351A4

公开(公告)日：2015-08-12

申请号：EP09842709

申请日：2009-12-10

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/321 ,  H01J37/32623

Abstract: The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus 1 has a chamber 2 having a plasma generating space 9 and a processing space 6, a coil 16 disposed on the outside of a portion corresponding to the plasma generating space 9, a platen 10 which is provided in the processing space 6 and on which a substrate K is to be placed, a processing gas supply mechanism 19 for supplying a processing gas into the plasma generating space 9, an RF power supply mechanism 17 for supplying RF power to the coil 16, and a power supply mechanism for platen 13 for supplying RF power to the platen 10. A cylindrical plasma density adjusting member 20 which is made of a conductive material grounded is fixedly provided on an inner wall of the chamber 2 between the plasma generating space 9 and the platen 10. While plasma passes through the plasma density adjusting member 20, the in-plane density of the plasma is equalized, and then the plasma is guided to the substrate K.

公开(公告)号：JP2014195027A

公开(公告)日：2014-10-09

申请号：JP2013071331

申请日：2013-03-29

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社

Inventor： SASAKURA MASAHIRO ,  YAMAMOTO TAKASHI ,  SENHO MITSUNARI

IPC: H01L21/3065 ,  H01L21/336 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an etching structure having a predetermined tapered shape of which the diameter is reduced from an opening to a bottom.SOLUTION: An initial step P, a first processing step A, a second processing step B and a third processing step C are applied to a silicon substrate K. The processing steps A, B and C are the steps of implementing multiple times a cycle of successively repeating a protective film forming process and two etching processes. The first processing step A and the second processing step B are configured at least to gradually shorten a processing time, gradually decrease pressure within a processing chamber or gradually decrease power applied to a base in accordance with the repetition of the cycle in at least one of the two etching processes. The third processing step C is configured at least to prolong a processing time, increase pressure within the processing chamber or increase power applied to the base in accordance with the repetition of the cycle in at least one of the two etching processes.

Abstract translation: 要解决的问题：提供一种形成具有从开口到底部的直径减小的预定锥形形状的蚀刻结构的方法。解决方案：初始步骤P，第一处理步骤A，第二处理步骤B 并且第三处理步骤C应用于硅衬底K.处理步骤A，B和C是多次连续重复保护膜形成工艺和两次蚀刻工艺的循环的步骤。 第一处理步骤A和第二处理步骤B至少被配置为逐渐缩短处理时间，逐渐减小处理室内的压力，或者根据循环的重复逐渐减小施加到基座的功率，其中至少一个 两个蚀刻工艺。 第三处理步骤C被配置为至少延长处理时间，增加处理室内的压力或根据在两个蚀刻工艺中的至少一个中循环的重复来增加施加到基座的功率。

公开(公告)号：JP2017085083A

公开(公告)日：2017-05-18

申请号：JP2016176223

申请日：2016-09-09

Applicant: Sppテクノロジーズ株式会社 ,  Spp Technologies Co Ltd

Inventor： SASAKURA MASAHIRO ,  YAMAMOTO TAKASHI ,  OTA KAZUYA

IPC: H01L21/3065 ,  H05H1/46

Abstract: 【課題】加工精度を向上可能な半導体素子の製造方法を提供する。【解決手段】本実施形態の半導体素子の製造方法は、プラズマが生成されるプラズマ生成空間と、プラズマ生成空間の下方に配置されプラズマ生成空間とつながる処理空間とを有するチャンバ内において、半導体基板が載置された試料台を基準高さH1に配置し、プラズマ生成空間でプラズマを生成して半導体基板に対してエッチングを実施する工程と、基準高さと異なる特定高さH2に試料台を配置し、プラグマ生成空間でプラズマを生成して半導体基板に対してエッチングを実施する工程とを備える。【選択図】図9

公开(公告)号：JP2014135447A

公开(公告)日：2014-07-24

申请号：JP2013003811

申请日：2013-01-11

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社 ,  Taiyo Nippon Sanso Corp ,  大陽日酸株式会社

Inventor： YAMAMOTO TAKASHI ,  IKEMOTO NAOYA ,  ISAKI RYUICHIRO ,  TAKA HIROSHI

IPC: H01L21/3065 ,  B01D53/34 ,  B01D53/68 ,  B81C1/00

CPC classification number: Y02C20/30 ,  Y02P70/605

Abstract: PROBLEM TO BE SOLVED: To provide an exhaust gas treatment device capable of reducing SFwhich is global warming gas, and also to provide an etching device with an exhaust gas treatment function, and an exhaust gas treatment method.SOLUTION: An exhaust gas treatment device includes: a reactant 32 which reacts to active fluoride contained in exhaust gas exhausted from the inside of a chamber 22 of an etching device 11 in which etching gas containing SFis turned into plasma and silicon is plasma-etched; and a reaction chamber 31 having an exhaust gas introducing port 36 capable of introducing exhaust gas therefrom, a housing part 35 housing the reactant 32 therein, and an exhaust gas lead-out port 38 from which exhaust gas coming into contact with the reactant 32 is led out.

Abstract translation: 要解决的问题：提供能够减少作为全球变暖气体的SF的废气处理装置，以及提供具有排气处理功能的蚀刻装置和废气处理方法。排气处理装置包括： 反应物32，其与从蚀刻装置11的室22的内部排出的废气中所含的活性氟反应，其中含有SFis的蚀刻气体变成等离子体和硅;等离子体蚀刻; 以及具有能够从其排出废气的排气导入口36的反应室31，容纳反应物32的壳体部35以及与反应物32接触的废气的废气引出口38， 带走了

公开(公告)号：JP2012178578A

公开(公告)日：2012-09-13

申请号：JP2012093087

申请日：2012-04-16

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社

Inventor： YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a substrate etching apparatus capable of uniformly etching an entire surface of a substrate even when the substrate is large, and which is free from deterioration of etching shapes.SOLUTION: A substrate etching apparatus comprises: a chamber 2 which has a plasma formation space 9 and a processing space 6; a coil 16 which is provided on an outside of a portion corresponding to the plasma formation space 9; a stage 10 which is provided in the processing space 6 to place a substrate K; processing gas supply means 19 for supplying processing gas into the plasma formation space 9; high-frequency power supply means 17 for supplying high-frequency power to the coil 16; and stage power supply means 13 for supplying the high-frequency power to the stage 10. A plasma density adjusting member 20 is fixed to an inner wall of the chamber 2 between the plasma formation space 9 and the stage 10. During a period that plasma passes through the plasma density adjusting member 20, density in a plane of the plasma is leveled, and then the plasma is guided to the substrate K.

Abstract translation: 解决的问题：提供一种能够均匀地蚀刻基板的整个表面的基板蚀刻装置，即使在基板大的情况下，也不会导致蚀刻形状的劣化。 解决方案：基板蚀刻装置包括：具有等离子体形成空间9和处理空间6的室2; 设置在对应于等离子体形成空间9的部分的外侧的线圈16; 设置在处理空间6中以放置基板K的台架10; 用于将处理气体供应到等离子体形成空间9中的处理气体供给装置19; 用于向线圈16提供高频电力的高频电源装置17; 以及用于向舞台10提供高频电力的舞台电源装置13.等离子体密度调节构件20固定在等离子体形成空间9和舞台10之间的室2的内壁上。等离子体 通过等离子体密度调节构件20，将等离子体的平面中的密度调平，然后将等离子体引导到衬底K.版权所有：（C）2012，JPO＆INPIT

公开(公告)号：JP2014138122A

公开(公告)日：2014-07-28

申请号：JP2013006594

申请日：2013-01-17

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社 ,  Taiyo Nippon Sanso Corp ,  大陽日酸株式会社

Inventor： YAMAMOTO TAKASHI ,  IKEMOTO NAOYA ,  ISAKI RYUICHIRO ,  TAKA HIROSHI

IPC: H01L21/3065 ,  B81C1/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC classification number: Y02C20/30 ,  Y02P70/605

Abstract: PROBLEM TO BE SOLVED: To provide a plasma etching method capable of reducing greenhouse gas emissions without deteriorating etching processing characteristics in plasma etching processing which alternately and repeatedly performs an etching step and a protective film forming step, and to provide a plasma etching device.SOLUTION: A plasma etching method processes a single crystal silicon substrate 25 by alternately repeating the steps of: turning an etching gas into plasma and plasma-etching the single crystal silicon substrate 25 (etching step); and forming a protective film 34 covering a sidewall of the single crystal silicon substrate 25 exposed by plasma etching by using 2,3,3,3-tetrafluoropropene as a deposit gas (protective film forming step).

Abstract translation: 要解决的问题：提供能够减少温室气体排放而不恶化等离子体蚀刻处理中的蚀刻处理特性的等离子体蚀刻方法，其中交替重复进行蚀刻步骤和保护膜形成步骤，并提供等离子体蚀刻装置。 ：等离子体蚀刻方法通过交替重复以下步骤处理单晶硅衬底25：将蚀刻气体转换成等离子体并等离子体蚀刻单晶硅衬底25（蚀刻步骤）; 通过使用2,3,3,3-四氟丙烯作为沉积气体（保护膜形成步骤），形成覆盖通过等离子体蚀刻而暴露的单晶硅衬底25的侧壁的保护膜34。

公开(公告)号：JP2013161839A

公开(公告)日：2013-08-19

申请号：JP2012020535

申请日：2012-02-02

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社

Inventor： YAMAMOTO TAKASHI ,  IKEMOTO NAOYA

IPC: H01L21/683 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a substrate holder which eliminates the need for complicated assembly adhesion work and peeling and demolition work of a processed member, and which does not deteriorate and enables repeated use.SOLUTION: A substrate tray includes: a plate like cover part 31 which has a base part 35 including one or multiple recessed parts 36, in which one or multiple substrates are respectively housed, on an upper surface and one or multiple opening parts 39 corresponding to at least one of the recessed parts 36 and is formed so as to be placed on the base part 35. The substrate tray includes a positioning mechanism (pin holes 37 and positioning pins 38) which positions the cover part 31 and the base part 35 so that a periphery of each opening of the cover part 31 covers an upper surface of an outer peripheral part of each silicon substrate K housed in the recessed part 36 of the base part 35 when the cover part 31 is placed on the base part 35.

Abstract translation: 要解决的问题：提供一种基板保持器，其不需要复杂的组装粘合作业和加工构件的剥离和拆卸作业，并且不劣化并且能够重复使用。解决方案：基板托盘包括：板状盖 部分31具有基部35，其包括一个或多个凹部36，一个或多个基板分别容纳在上表面上，一个或多个开口部分39对应于至少一个凹部36并形成 以便放置在基部35上。基板托盘包括定位机构（销孔37和定位销38），其将盖部分31和基部部分35定位成使得盖部分31的每个开口的周边 当覆盖部31被放置在基部35上时，覆盖容纳在基部35的凹部36中的各硅基板K的外周部的上表面。