公开(公告)号：DE602008006465D1

公开(公告)日：2011-06-01

申请号：DE602008006465

申请日：2008-09-22

Applicant: NXP BV ,  ST MICROELECTRONICS CROLLES 2

Inventor： CORONEL PHILIPPE ,  DUMONT BENJAMIN ,  POUYDEBASQUE ARNAUD ,  MUELLER MARKUS

IPC: H01L21/335 ,  H01L29/06

公开(公告)号：AT506696T

公开(公告)日：2011-05-15

申请号：AT08804548

申请日：2008-09-22

Applicant: ST MICROELECTRONICS CROLLES 2 ,  NXP BV

Inventor： CORONEL PHILIPPE ,  DUMONT BENJAMIN ,  POUYDEBASQUE ARNAUD ,  MUELLER MARKUS

IPC: H01L21/335 ,  H01L29/06

Abstract: A process for forming a wire portion in an integrated electronic circuit includes epitaxially growing the wire portion on a side surface of a seed layer portion (11, 12). Cross-sectional dimensions of the wire portion correspond to a thickness of the seed layer portion and to a duration of the growing step. The seed layer portion is then selectively removed while the wire portion is retained fixedly on the circuit. Afterwards, heating of the circuit can cause the wire portion becoming rounded in cross-section. The wire portion obtained may be about 10 nanometers in diameter. It may be used for forming a channel of a MOS transistor devoid of short channel effect.

公开(公告)号：DE602006019940D1

公开(公告)日：2011-03-17

申请号：DE602006019940

申请日：2006-03-06

Applicant: ST MICROELECTRONICS CROLLES 2

Inventor： CORONEL PHILIPPE ,  POUYDEBASQUE ARNAUD

IPC: H01L29/786