公开(公告)号：JP2002033294A

公开(公告)日：2002-01-31

申请号：JP2001179122

申请日：2001-06-13

Applicant: ST MICROELECTRONICS INC

Inventor： WANG FUCHAO ,  HWANG MING

IPC: H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit, having a silicide where sheet resistance is low and probability of peeling of a film or oxidation of metal is reduced, and to provide its manufacturing method. SOLUTION: The silicide, having variable inner metal concentration which is adjusted to the surface condition in an interface between the silicide and an adjacent layer, is used in an integrated circuit. Higher ratio (silicon rich) of silicon/metal is used in an interface with an adjacent layer, lattice nonconformity in the interface is reduced, and probability of peeling of a film is reduced. A lower ratio of silicon/metal is used in the central region of the silicide, and the specific resistance is reduced.

公开(公告)号：JP2000196027A

公开(公告)日：2000-07-14

申请号：JP36113599

申请日：1999-12-20

Applicant: ST MICROELECTRONICS INC

Inventor： DANIEL A THOMAS ,  HWANG MING

IPC: H01L27/04 ,  A61B5/117 ,  G01B7/28 ,  G01B7/34 ,  G06K9/00 ,  G06T1/00 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To improve a fingerprint sensor in electrostatic discharge protection characteristics by a method wherein a topographical discharge grid equipped with a dielectric layer is formed on conductive plates, the conductive plates are separated, and electrostatic charge is dispersed so as not to reach the conductive plates. SOLUTION: A dielectric body is provided between plates 10 and 12 and above them. A topographical discharge grid 32 is provided between the plates 10 and 12 and in a gap adjacent to a cell 3. By the topographical discharge grid 32, the discharge grid 32 is deposited in a gap or a groove formed as a part of a sensor circuit located below the grid 32. Electrostatic charge generated on the surface of the sensor cells 3 in the topographical discharge grid 32 and an insulating layer 16 is transferred, and the electronic component of the sensor cell 3 is protected. An electrostatic charge carrying capacity is optimized making the sensitivity of the sensor 3 least affected by the thickness, composition, and position of the topographical discharge grid 32.