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公开(公告)号：JP2000196025A
公开(公告)日：2000-07-14
申请号：JP36067199
申请日：1999-12-20
Applicant: ST MICROELECTRONICS INC
Inventor： ARNAUD EVE LUPERT , DANIEL A THOMAS , ANTONIO DOOBENTO-BIEIRA
Abstract: PROBLEM TO BE SOLVED: To realize an integrated circuit, equipped with a contact between a pad and conductive layers for making electrostatic charges escape in a sensor, and a method for forming the contact. SOLUTION: A pad 38 and composite insulating layers 16 are formed between and on conductive plates on a substrate. The insulating layers 16 can separate the conductive plates and the pad 38 and protect them from damages, and the insulating layers 16 are provided with dielectric regions which are present at the lower side of a conductive layer. Passivation layers 32 are formed on at least one part of the insulating layers 16, and a photoresist is pattern-formed on at least one part of the passivation layers 32. An opening 36 is etching- formed so as to be put through the passivation layers 32 and the insulating layers 16, and the photoresist and the conductive layer are used as a mask, in this case. Then, conductive materials are adhered in the opening 36, and an electric contact between the pad 38 and the conductive layer is formed.
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Patent Agency Ranking
公开(公告)号：JP2003264311A
公开(公告)日：2003-09-19
申请号：JP2003025804
申请日：2003-02-03
Applicant: ST MICROELECTRONICS INC
Inventor： DANIEL A THOMAS , THOMAS GILLES E
IPC: H01L27/14 , H01L27/146 , H01L31/10
Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit device including a photodiode and its making method. SOLUTION: Fast and efficient photodiodes having different structures are fabricated using CMOS processing technology by adapting the transistor structure to form a diode structure. The anode region of the photodiode corresponds to either of the PLDD region of a PMOS transistor or the P-well of an NMOS transistor and two different photodiode structures having different anode region depths, and thereby a different drift region thickness, are provided. An antireflection film used on the silicon surface of the photodiode is used as a silicon blocking mask at other parts of the device. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2000196026A
公开(公告)日：2000-07-14
申请号：JP36093299
申请日：1999-12-20
Applicant: ST MICROELECTRONICS INC
Inventor： ARNAUD EVE LUPERT , DANIEL A THOMAS
Abstract: PROBLEM TO BE SOLVED: To enhance a sensor in electrostatic discharge protection by a method wherein a composite insulating layer is formed between conductive plates and above them to isolate the conductive plates, and the conductive plates are protected against damage. SOLUTION: Pixels are formed on a silicon substrate 13. A dielectric layer 30 is formed on the conductive plates 10 and 12 and the substrate 13 through a plasma enhancement vapor growth method so as to be thick enough to electrically isolate the conductive plates 10 and 12 and the substrate 13. The dielectric layer 30 is a composite layer composed of a first dielectric layer 30' and a second dielectric layer 32 which are each formed of suitable dielectric material that has a required dielectric constant. A conductive layer 32 is provided on a part of the dielectric layer 30. The thickness of the dielectric layer 30 is properly determined depending on the resistivity level of dielectric material to a conductive material in a layer 16 so as to ensure the dielectric layer 30 of an electric charge carrying capacity and a damage protection properties.
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公开(公告)号：JP2003264243A
公开(公告)日：2003-09-19
申请号：JP2003026193
申请日：2003-02-03
Applicant: ST MICROELECTRONICS INC
Inventor： DANIEL A THOMAS , THOMAS GILLES E
IPC: H01L27/06 , H01L21/8234 , H01L27/146 , H01L31/10
Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit device including a photodiode and its fabricating method. SOLUTION: Fast and efficient photodiodes having different structures are fabricated using CMOS processing technology by adapting the transistor structure to form a diode structure. The anode region of the photodiode corresponds to either PLDD region of a PMOS transistor or the P well of an NMOS transistor and two different photodiode structures having different anode region depths, and thereby a different thickness of drift region, are provided. An antireflection film used on the silicon surface of the photodiode is used as a silicon-blocking mask at other parts of the device. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2000196027A
公开(公告)日：2000-07-14
申请号：JP36113599
申请日：1999-12-20
Applicant: ST MICROELECTRONICS INC
Inventor： DANIEL A THOMAS , HWANG MING
Abstract: PROBLEM TO BE SOLVED: To improve a fingerprint sensor in electrostatic discharge protection characteristics by a method wherein a topographical discharge grid equipped with a dielectric layer is formed on conductive plates, the conductive plates are separated, and electrostatic charge is dispersed so as not to reach the conductive plates. SOLUTION: A dielectric body is provided between plates 10 and 12 and above them. A topographical discharge grid 32 is provided between the plates 10 and 12 and in a gap adjacent to a cell 3. By the topographical discharge grid 32, the discharge grid 32 is deposited in a gap or a groove formed as a part of a sensor circuit located below the grid 32. Electrostatic charge generated on the surface of the sensor cells 3 in the topographical discharge grid 32 and an insulating layer 16 is transferred, and the electronic component of the sensor cell 3 is protected. An electrostatic charge carrying capacity is optimized making the sensitivity of the sensor 3 least affected by the thickness, composition, and position of the topographical discharge grid 32.
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公开(公告)号：JP2000196024A
公开(公告)日：2000-07-14
申请号：JP36057799
申请日：1999-12-20
Applicant: ST MICROELECTRONICS INC
Inventor： ARNAUD EVE LUPERT , DANIEL A THOMAS , ANTONIO DOOBENTO-BIEIRA
Abstract: PROBLEM TO BE SOLVED: To scatter electrostatic charge so as to improve a sensor array in electrostatic discharge protection, by a method wherein a conductive plate is separated off, a dielectric layer is provided to protect the conductive plate against damage, and furthermore an insulating layer is provided on the conductive plate. SOLUTION: Cells 3a and 3b are possessed of a first conductive plate 10 and a second conductive plate 12 supported on a semiconductor substrate respectively. An insulating layer 16 is provided on the top surface of the semiconductor substrate. A conductive layer is formed on the insulating layer 16 to protect the semiconductor substrate against damage caused by electrostatic discharge induced by an electrostatic potential carried by an object such as fingers or the like. Dielectric layers 29a and 29b are each provided on the conductive plates 10 and 12 so as to separate them from one another. Conductive pads are each formed on the dielectric layers 29a and 29b. A passivation film 34 is deposited on the conductive layer.
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