公开(公告)号：US6433435B2

公开(公告)日：2002-08-13

申请号：US8688498

申请日：1998-05-29

Applicant: ST MICROELECTRONICS INC

Inventor： LIN YIH-SHUNG ,  LIOU FU-TAI

IPC: H01L23/522 ,  C23C16/02 ,  C23C16/20 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L21/76858 ,  C23C16/0281 ,  C23C16/20 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming an aluminum contact through an insulating layer includes the formation of an opening. A barrier layer is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer, and aluminum deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum is deposited over the refractory metal layer without breaking vacuum.

Abstract translation: 通过绝缘层形成铝接触的方法包括形成开口。 如果需要，在绝缘层和开口中形成阻挡层。 然后在阻挡层上形成薄的难熔金属层，并且沉积在难熔金属层上方的铝。 适当选择难熔金属层和铝沉积条件允许铝流入接触并完全填充它。 优选地，将铝沉积在难熔金属层上而不破坏真空。

公开(公告)号：DE69132190D1

公开(公告)日：2000-06-15

申请号：DE69132190

申请日：1991-11-26

Applicant: ST MICROELECTRONICS INC

Inventor： LIOU FU-TAI ,  CHEN FUSEN E

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method is provided for forming improved quality interlevel aluminum contacts in semiconductor integrated circuits. A contact opening is formed through an insulating layer. A barrier layer is deposited over the surface of the integrated circuit. An aluminum layer is then deposited at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

公开(公告)号：DE69132190T2

公开(公告)日：2000-10-05

申请号：DE69132190

申请日：1991-11-26

Applicant: ST MICROELECTRONICS INC

Inventor： LIOU FU-TAI ,  CHEN FUSEN E

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method is provided for forming improved quality interlevel aluminum contacts in semiconductor integrated circuits. A contact opening is formed through an insulating layer. A barrier layer is deposited over the surface of the integrated circuit. An aluminum layer is then deposited at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

公开(公告)号：DE69424847D1

公开(公告)日：2000-07-13

申请号：DE69424847

申请日：1994-11-17

Applicant: ST MICROELECTRONICS INC

Inventor： LIN YIH-SHUNG ,  LIOU FU-TAI

IPC: H01L23/522 ,  C23C16/02 ,  C23C16/20 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L21/285

Abstract: A method for forming an aluminum contact through an insulating layer (12) includes the formation of an opening (14). A barrier layer (16,18) is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer (16,18), and aluminum (26) deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum (26) is deposited over the refractory metal layer without breaking vacuum.

公开(公告)号：DE69424847T2

公开(公告)日：2000-11-16

申请号：DE69424847

申请日：1994-11-17

Applicant: ST MICROELECTRONICS INC

Inventor： LIN YIH-SHUNG ,  LIOU FU-TAI

IPC: H01L23/522 ,  C23C16/02 ,  C23C16/20 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L21/285

Abstract: A method for forming an aluminum contact through an insulating layer (12) includes the formation of an opening (14). A barrier layer (16,18) is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer (16,18), and aluminum (26) deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum (26) is deposited over the refractory metal layer without breaking vacuum.

公开(公告)号：DE69133549D1

公开(公告)日：2006-11-16

申请号：DE69133549

申请日：1991-11-01

Applicant: ST MICROELECTRONICS INC

Inventor： CHEN FUSEN E ,  LIOU FU-TAI ,  LIN YIH-SHUNG ,  DIXIT GIRISH A ,  WEI CHE-CHIA

IPC: H01L21/28 ,  H01L21/285 ,  C23C16/02 ,  C23C16/20 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

Abstract: A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.