公开(公告)号：DE69327824T2

公开(公告)日：2000-07-06

申请号：DE69327824

申请日：1993-07-30

Applicant: ST MICROELECTRONICS INC

Inventor： WEI CHE-CHIA

IPC: H01L21/28 ,  H01L21/82 ,  H01L23/525 ,  H01L29/41

公开(公告)号：DE69133549D1

公开(公告)日：2006-11-16

申请号：DE69133549

申请日：1991-11-01

Applicant: ST MICROELECTRONICS INC

Inventor： CHEN FUSEN E ,  LIOU FU-TAI ,  LIN YIH-SHUNG ,  DIXIT GIRISH A ,  WEI CHE-CHIA

IPC: H01L21/28 ,  H01L21/285 ,  C23C16/02 ,  C23C16/20 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

Abstract: A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

公开(公告)号：DE69327824D1

公开(公告)日：2000-03-16

申请号：DE69327824

申请日：1993-07-30

Applicant: ST MICROELECTRONICS INC

Inventor： WEI CHE-CHIA

IPC: H01L21/28 ,  H01L21/82 ,  H01L23/525 ,  H01L29/41