公开(公告)号：DE69734383D1

公开(公告)日：2006-03-02

申请号：DE69734383

申请日：1997-12-12

Applicant: ST MICROELECTRONICS INC

Inventor： BRYANT FRANK R ,  SINGH ABHA R ,  CUNNINGHAM JAMES A

IPC: H01L21/316 ,  H01L21/66 ,  H01L21/70 ,  H01L21/82 ,  H01L23/31 ,  H01L23/50

Abstract: A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device and fusible links. After testing and laser repair, a second passivation layer is formed over the wafer followed a deposit of the protective overcoat. The protective overcoat is patterned and etched, exposing the pads. The remaining portions of the protective overcoat are used as a mask to remove portions of the second passivation layer overlying the pads. Leads are then attached to pads and the devices are encapsulated for packaging. The second passivation layer overlaps edge portions of the first passivation layer at the bond pads to enhance moisture resistance.