公开(公告)号：EP2274770A4

公开(公告)日：2012-12-26

申请号：EP09739614

申请日：2009-04-28

Applicant: ST MICROELECTRONICS NV

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR ,  CORDELL RICHARD

IPC: H01L29/78

CPC classification number: H01L29/7803 ,  H01L29/7805 ,  H01L29/7813

Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25µm technology. Self-aligned processing can be used.