公开(公告)号：EP2384518A4

公开(公告)日：2014-01-22

申请号：EP10729478

申请日：2010-01-06

Applicant: ST MICROELECTRONICS NV

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR

IPC: H01L29/861

CPC classification number: H01L29/7412 ,  H01L27/0811 ,  H01L27/0814 ,  H01L29/861

Abstract: A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.

公开(公告)号：EP2274770A4

公开(公告)日：2012-12-26

申请号：EP09739614

申请日：2009-04-28

Applicant: ST MICROELECTRONICS NV

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR ,  CORDELL RICHARD

IPC: H01L29/78

CPC classification number: H01L29/7803 ,  H01L29/7805 ,  H01L29/7813

Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25µm technology. Self-aligned processing can be used.

公开(公告)号：EP2232559A4

公开(公告)日：2012-08-01

申请号：EP08833488

申请日：2008-09-25

Applicant: ST MICROELECTRONICS NV

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR

IPC: H01L29/861 ,  H01L21/334

CPC classification number: H01L29/78 ,  H01L27/0817 ,  H01L29/0646 ,  H01L29/66075 ,  H01L29/66477 ,  H01L29/7802 ,  H01L29/861

Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

公开(公告)号：EP2240960A4

公开(公告)日：2011-02-02

申请号：EP09813383

申请日：2009-01-23

Applicant: ST MICROELECTRONICS NV

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR

IPC: H01L29/78 ,  H01L29/423 ,  H02M1/088 ,  H02M1/38

CPC classification number: H01L29/7815 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/66727 ,  H01L2924/0002 ,  H02M7/06 ,  H01L2924/00

Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.