公开(公告)号：WO03054919A3

公开(公告)日：2003-12-31

申请号：PCT/DE0204439

申请日：2002-12-04

Applicant: ST MICROELECTRONICS NV ,  LULE TAREK

Inventor： LULE TAREK

IPC: H01L20060101 ,  H01L21/8238 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14692

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology consisting of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material (11) that are configured as pixels are linked with transistor structures (33) in the crystalline ASIC (2) via back electrodes (12). The transistor structures (33) have particularly low leakage currents due to implantation technology or optimization of the production process.

Abstract translation: 本发明涉及一种用于图像传感器的制造基于TFA的技术，包括一种无定形的薄膜系统，该系统已被应用到的结晶ASIC的处理。 通过本发明，图像传感器是基于TFA技术被创建，由此在低光照度提供更高质量的图像，即暗电流可以减小。 这是这样实现的，在该薄膜材料上的光电二极管上的背面电极（12），每个晶体管结构（33）形成（11）逐个像素被连接在结晶ASIC（2），其具有通过注入技术或特别低的漏电流的制造步骤的优化。

公开(公告)号：AU2002357965A1

公开(公告)日：2003-07-09

申请号：AU2002357965

申请日：2002-12-04

Applicant: ST MICROELECTRONICS NV

Inventor： LULE TAREK

IPC: H01L20060101 ,  H01L21/8238 ,  H01L27/146 ,  H01L31/18

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

公开(公告)号：AU2002321022A1

公开(公告)日：2002-11-25

申请号：AU2002321022

申请日：2002-05-15

Applicant: ST MICROELECTRONICS NV

Inventor： RONNEBERGER REINHARD ,  SEIBEL KONSTANTIN ,  PRIMA JENS ,  LULE TAREK ,  RIEVE PETER ,  WALDER MARCUS ,  SCHOLZ MARKUS

IPC: H01L27/146 ,  H01L31/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0376

Abstract: The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.

公开(公告)号：DE50211227D1

公开(公告)日：2007-12-27

申请号：DE50211227

申请日：2002-12-04

Applicant: ST MICROELECTRONICS NV

Inventor： LULE TAREK

IPC: H01L27/146 ,  H01L20060101 ,  H01L21/8238 ,  H01L31/18

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

公开(公告)号：DE10296059D2

公开(公告)日：2004-10-28

申请号：DE10296059

申请日：2002-12-04

Applicant: ST MICROELECTRONICS NV

Inventor： LULE TAREK

IPC: H01L20060101 ,  H01L21/8238 ,  H01L27/146 ,  H01L31/18

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

公开(公告)号：AU2002357965A8

公开(公告)日：2003-07-09

申请号：AU2002357965

申请日：2002-12-04

Applicant: ST MICROELECTRONICS NV

Inventor： LULE TAREK

IPC: H01L20060101 ,  H01L21/8238 ,  H01L27/146 ,  H01L31/18

Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.