公开(公告)号：FR2834575B1

公开(公告)日：2004-07-09

申请号：FR0200217

申请日：2002-01-09

Applicant: ST MICROELECTRONICS SA

Inventor： BIANCHI RAUL ANDREAS

IPC: H01L29/00 ,  G06F17/50 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L21/04

公开(公告)号：FR2834575A1

公开(公告)日：2003-07-11

申请号：FR0200217

申请日：2002-01-09

Applicant: ST MICROELECTRONICS SA

Inventor： BIANCHI RAUL ANDREAS

IPC: H01L29/00 ,  G06F17/50 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L21/04

公开(公告)号：FR2809887B1

公开(公告)日：2002-08-23

申请号：FR0007227

申请日：2000-06-06

Applicant: ST MICROELECTRONICS SA

Inventor： BIANCHI RAUL ANDREAS ,  FROMENT BENOIT

IPC: H03M1/10 ,  H03M1/78 ,  H03M1/06

Abstract: The control device (DCA) comprises a capacitive structure (SCA) having an input node (ND0) and n output nodes (ND1, ..., NDn), where n is greater or equal to 2, then r integrated capacitors (C) connected in series between neighbouring nodes, where r is greater or equal to 1, eg. r=1, an integrated capacitor (C) connected between the input node and the ground, and between the n-th node of output and the ground, r capacitive branches connected in parallel between the ground and each node, including the first node of output and the (n-1)th node of output, where each branch BRi (i=1, ..., n-1) comprises r+1, eg. 2, integrated capacitors (C) connected in series, and all capacitors (C) are theoretically identical. The device also comprises the charging means (MCH) including a reference voltage source (STR) and a controlled switch (Sv), the measuring means including an ammeter (Amp) and a controlled switch (Si), and the comparison means for comparing each measured value of nodal charge to the theoretical value of nodal charge with taking into account a predetermined tolerance. The device also comprises, for each node of capacitive structure (SCA), a controlled switch (Sres) for discharge, connected between the node and the ground. The device is utilized for the control of integrated capacitors belonging to an integrated circuit (IC) situated in a zone of a semiconductor wafer and demarcated by cutting lines, where the capacitive structure is inserted in the cutting lines, and the surface of frame of capacitors of capacitive structure is at most equal to the minimum surface of frame of capacitors of integrated circuit. The method of control includes the following steps: the discharge of all nodes; the charging of all nodes; the connection of ammeter between the measured node and the ground; and the disconnection of ammeter.

公开(公告)号：FR2809887A1

公开(公告)日：2001-12-07

申请号：FR0007227

申请日：2000-06-06

Applicant: ST MICROELECTRONICS SA

Inventor： BIANCHI RAUL ANDREAS ,  FROMENT BENOIT

IPC: H03M1/10 ,  H03M1/78 ,  H03M1/06

Abstract: The control device (DCA) comprises a capacitive structure (SCA) having an input node (ND0) and n output nodes (ND1, ..., NDn), where n is greater or equal to 2, then r integrated capacitors (C) connected in series between neighbouring nodes, where r is greater or equal to 1, eg. r=1, an integrated capacitor (C) connected between the input node and the ground, and between the n-th node of output and the ground, r capacitive branches connected in parallel between the ground and each node, including the first node of output and the (n-1)th node of output, where each branch BRi (i=1, ..., n-1) comprises r+1, eg. 2, integrated capacitors (C) connected in series, and all capacitors (C) are theoretically identical. The device also comprises the charging means (MCH) including a reference voltage source (STR) and a controlled switch (Sv), the measuring means including an ammeter (Amp) and a controlled switch (Si), and the comparison means for comparing each measured value of nodal charge to the theoretical value of nodal charge with taking into account a predetermined tolerance. The device also comprises, for each node of capacitive structure (SCA), a controlled switch (Sres) for discharge, connected between the node and the ground. The device is utilized for the control of integrated capacitors belonging to an integrated circuit (IC) situated in a zone of a semiconductor wafer and demarcated by cutting lines, where the capacitive structure is inserted in the cutting lines, and the surface of frame of capacitors of capacitive structure is at most equal to the minimum surface of frame of capacitors of integrated circuit. The method of control includes the following steps: the discharge of all nodes; the charging of all nodes; the connection of ammeter between the measured node and the ground; and the disconnection of ammeter.