公开(公告)号：FR2779006B1

公开(公告)日：2003-01-24

申请号：FR9806282

申请日：1998-05-19

Applicant: ST MICROELECTRONICS SA

Inventor： PEREA ERNESTO ,  BOMCHIL GUILLERMO ,  HALIMAOUI AOMAR

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/3063 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L21/306

Abstract: The back face of the Si wafer that already incorporates transistors and an inductive surface on its front face, is brought into contact with an electrolyte. The electrolyte contains HF, at least one other acid such as acetic acid. The silicon on the back face is subjected to an anodic oxidation creating porous silicon over a predetermined height from the back face.

公开(公告)号：FR2779006A1

公开(公告)日：1999-11-26

申请号：FR9806282

申请日：1998-05-19

Applicant: ST MICROELECTRONICS SA

Inventor： PEREA ERNESTO ,  BOMCHIL GUILLERMO ,  HALIMAOUI AOMAR

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/3063 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L21/306

Abstract: The back face of the Si wafer that already incorporates transistors and an inductive surface on its front face, is brought into contact with an electrolyte. The electrolyte contains HF, at least one other acid such as acetic acid. The silicon on the back face is subjected to an anodic oxidation creating porous silicon over a predetermined height from the back face.